349
Motorola Thyristor Device Data
TRIACS
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications where high
noise immunity and high commutating di/dt are required.
Blocking Voltage to 800 Volts
On-State Current Rating of 8.0 Amperes RMS at 100
C
Uniform Gate Trigger Currents in Three Modes
High Immunity to dv/dt -- 500 V/
s minimum at 125
C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package
High Commutating di/dt -- 6.5 A/ms minimum at 125
C
MAXIMUM RATINGS (TJ = 25
C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDRM
Peak Repetitive Off-State Voltage (1)
( 40 to 125
C, Sine Wave, 50 to 60 Hz, Gate Open)
MAC9D
MAC9M
MAC9N
400
600
800
Volts
IT(RMS)
On-State RMS Current
(60 Hz, TC = 100
C)
8.0
A
ITSM
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125
C)
80
A
I2t
Circuit Fusing Consideration (t = 8.3 ms)
26
A2sec
PGM
Peak Gate Power (Pulse Width
1.0
s, TC = 80
C)
16
Watts
PG(AV)
Average Gate Power (t = 8.3 ms, TC = 80
C)
0.35
Watts
TJ
Operating Junction Temperature Range
40 to +125
C
Tstg
Storage Temperature Range
40 to +150
C
THERMAL CHARACTERISTICS
R
JC
R
JA
Thermal Resistance -- Junction to Case
Thermal Resistance
-- Junction to Ambient
2.2
62.5
C/W
TL
Maximum Lead Temperature for Soldering Purposes 1/8
from Case for 10 Seconds
260
C
(1)
VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MAC9
SERIES
CASE 221A-06
(TO-220AB)
Style 4
MT2
MT1
MT2
G
TRIACS
8.0 AMPERES RMS
400 thru 800
VOLTS
*Motorola preferred devices
*
MAC9 SERIES
350
Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
IDRM
Peak Repetitive Blocking Current
(VD = Rated VDRM, Gate Open)
TJ = 25
C
TJ = 125
C
--
--
--
--
0.01
2.0
mA
ON CHARACTERISTICS
VTM
Peak On-State Voltage*
(ITM =
11 A Peak)
--
1.2
1.6
Volts
IGT
Continuous Gate Trigger Current (VD = 12 V, RL = 100
)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
10
10
10
16
18
22
50
50
50
mA
IH
Hold Current
(VD = 12 V, Gate Open, Initiating Current =
150 mA)
--
30
50
mA
IL
Latch Current (VD = 24 V, IG = 50 mA)
MT2(+), G(+); MT2(), G()
MT2(+), G()
--
--
20
30
50
80
mA
VGT
Gate Trigger Voltage (VD = 12 V, RL = 100
)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
0.5
0.5
0.5
0.69
0.77
0.72
1.5
1.5
1.5
Volts
DYNAMIC CHARACTERISTICS
(di/dt)c
Rate of Change of Commutating Current* See Figure 10.
(VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/
s,
CL = 10
F
Gate Open, TJ = 125
C, f = 250 Hz, No Snubber)
LL = 40 mH
6.5
--
--
A/ms
dv/dt
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125
C)
500
--
--
V/
s
*Indicates Pulse Test: Pulse Width
2.0 ms, Duty Cycle
2%.
Figure 1. RMS Current Derating
IT(RMS), RMS ON-STATE CURRENT (AMP)
125
120
115
110
105
100
8
7
6
5
4
3
2
1
0
T
C
, CASE
TEMPERA
TURE (
C)
Figure 2. On-State Power Dissipation
IT(RMS), ON-STATE CURRENT (AMP)
8
7
6
5
4
3
2
1
0
12
10
8
6
4
2
P
A
V
,
A
VERAGE POWER (W
A
TTS)
0
= 120, 90, 60, 30
= 180
= 30
DC
DC
180
120
90
60
MAC9 SERIES
351
Motorola Thyristor Device Data
TJ, JUNCTION TEMPERATURE (
C)
I GT
, GA
TE
TRIGGER CURRENT
(mA)
50
30
10
50
90
110
130
100
1
Q2
10
10
30
70
Q1
Q3
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
100
0
I T
, INST
ANT
ANEOUS ON-ST
A
TE CURRENT
(AMP)
0.5
1
1.5
2
2.5
3
4
5
10
1
0.1
MAXIMUM @ TJ = 125
C
TYPICAL AT
TJ = 25
C
MAXIMUM @ TJ = 25
C
t, TIME (ms)
r(t),
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
1
0.1
0.01
1 104
1000
100
10
1
0.1
TJ, JUNCTION TEMPERATURE (
C)
V
GT
, GA
TE
TRIGGER VOL
T
AGE (VOL
T)
1
0.4
50
30
10
10
70
110
130
Q1
Q2
3.5
4.5
50
90
0.45
0.5
0.55
0.65
075
0.85
0.9
0.95
0.6
0.7
0.8
TJ, JUNCTION TEMPERATURE (
C)
50
I H
, HOLD CURRENT
(mA)
40
5
10
30
50
70
110
130
10
90
30
10
15
20
25
30
35
Q3
30
Figure 3. On-State Characteristics
Figure 4. Thermal Response
Figure 5. Hold Current Variation
Figure 6. Gate Trigger Current Variation
Figure 7. Gate Trigger Voltage Variation
MT2 POSITIVE
MT2 NEGATIVE
MAC9 SERIES
352
Motorola Thyristor Device Data
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential)
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
5000
4K
3K
2K
1K
0
1000
100
10
1
dv/dt
, CRITICAL
RA
TE OF RISE OF OFF-ST
A
TE VOL
T
AGE
Figure 9. Critical Rate of Rise of
Commutating Voltage
(di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
(V/
s)
tw
VDRM
(di/dt)c =
6f ITM
1000
f =
1
2 tw
TJ = 125
C
100
C
75
C
10
60
100
10
1
LL
1N4007
400 V
+
MEASURE
I
CHARGE
CONTROL
CHARGE
TRIGGER
NON-POLAR
CL
51
2
1
1N914
G
TRIGGER CONTROL
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage
(dv/dt)
, CRITICAL
RA
TE OF RISE OF
(V/
s)
c
COMMUT
A
TING VOL
T
AGE
15
20
25
30
35
40
45
50
55
4.5K
3.5K
2.5K
1.5K
1K
1K
500
MT2 POSITIVE
MT2 NEGATIVE
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