1
MRF284 MRF284S
MOTOROLA RF DEVICE DATA
The RF SubMicron MOSFET Line
RF Power Field Effect Transistors
NChannel EnhancementMode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from
1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
applications. To be used in class A and class AB for PCNPCS/cellular radio
and wireless local loop.
Specified TwoTone Performance @ 2000 MHz, 26 Volts
Output Power = 30 Watts (PEP)
Power Gain = 9 dB
Efficiency = 30%
Intermodulation Distortion = 29 dBc
Typical SingleTone Performance at 2000 MHz, 26 Volts
Output Power = 30 Watts (CW)
Power Gain = 9.5 dB
Efficiency = 45%
Characterized with Series Equivalent LargeSignal Impedance Parameters
SParameter Characterization at High Bias Levels
Excellent Thermal Stability
Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts (CW)
Output Power
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
65
Vdc
GateSource Voltage
VGS
20
Vdc
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
87.5
0.5
Watts
W/
C
Storage Temperature Range
Tstg
65 to +150
C
Operating Junction Temperature
TJ
200
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
2.0
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0, ID = 10
Adc)
V(BR)DSS
65
--
--
Vdc
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0)
IDSS
--
--
1.0
Adc
GateSource Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
--
--
10
Adc
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF284/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF284
MRF284S
30 W, 2000 MHz, 26 V
LATERAL NCHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B01, STYLE 1
(MRF284)
CASE 360C03, STYLE 1
(MRF284S)
Motorola, Inc. 1997
REV 3
MRF284 MRF284S
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 150
Adc)
VGS(th)
2.0
3.0
4.0
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 200 mAdc)
VGS(q)
3.0
4.0
5.0
Vdc
DrainSource OnVoltage
(VGS = 10 Vdc, ID = 1.0 Adc)
VDS(on)
--
0.3
0.6
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1.0 Adc)
gfs
1.0
1.5
--
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
--
43
--
pF
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Coss
--
23
--
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Crss
--
1.4
--
pF
FUNCTIONAL TESTS (in Motorola Test Fixture)
CommonSource Power Gain
(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Gps
9
10.5
--
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
30
35
--
%
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IMD
--
32
29
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IRL
9
15
--
dB
CommonSource Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Gps
9
10.4
--
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
--
35
--
%
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IMD
--
34
--
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IRL
9
15
--
dB
CommonSource Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA,
f1 = 2000.0 MHz)
Gps
8.5
9.5
--
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA,
f1 = 2000.0 MHz)
35
45
--
%
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA,
f1 = 2000.0 MHz, VSWR = 10:1,
at All Phase Angles)
No Degradation In Output Power
3
MRF284 MRF284S
MOTOROLA RF DEVICE DATA
Figure 1. Schematic of 1.932.0 GHz Broadband Test Circuit
RF
INPUT
RF
OUTPUT
Z11
Z1
Z2
Z3
Z4
Z9
VGG
(BIAS)
C6
C2
C16
B1
R1
C1
+
C4
B2
R2
C7
B3
R3
C5
C8
+
L1
C3
Z5
C9
L2
Z7
Z8
DUT
VDD (DC Supply)
B6
R6 C17
+
C14
B5
R5
C12
B4
R4
C15
C13
+
_
L3
C10
Z10
C11
Z12
Z13
Z14
L4
Z15
B1 B6
Ferrite Bead, Round
C1, C17
470
F, 63 V, Mallory Electrolytic Capacitor
C2
0.6 4.5 pF Johansen Gigatrim Variable Capacitors
C3, C9
0.8 8.0 pF Johansen Gigatrim Variable Capacitors
C4, C14
0.1
F Chip Capacitor, KEMET
C5, C15
91 pF ATC RF Chip Capacitors, Case "B"
C6, C16
10 pF ATC RF Chip Capacitors, Case "B"
C7, C12
1000 pF ATC RF Chip Capacitors, Case "B"
C8, C13
5.1 pF ATC RF Chip Capacitors, Case "B"
C10
2.7 pF ATC RF Chip Capacitors, Case "B"
C11
0.4 2.5 pF Johansen Gigatrim Variable Capacitors
L1
4 Turns, #27 AWG, 0.087
OD, 0.050
ID, 0.069
Long, 10 nH
L2, L3
9 Turns, #26 AWG, 0.080
OD, 0.046
ID, 0.170
Long, 30.8 nH
L4
2 Turns, #24 AWG, 0.85
OD, 0.042
ID, 0.064
Long, 5.2 nH
R1 R6
12
Fixed Film Chip Resistor 0.08
x 0.13
Z1
0.145
x 0.080
Microstrip
Z2
0.680
x 0.080
Microstrip
Z3
0.185
x 0.080
Microstrip
Z4
0.395
x 0.080
Microstrip
Z5
0.490
x 0.080
Microstrip
Z6
0.035
x 0.325
Microstrip
Z7
0.240
x 0.325
Microstrip
Z8
0.210
x 0.515
Microstrip
Z9
0.130
x 0.515
Microstrip
Z10
0.080
x 0.515
Microstrip
Z11
0.190
x 0.325
Microstrip
Z12
0.090
x 0.325
Microstrip
Z13
0.515
x 0.080
Microstrip
Z14
0.860
x 0.080
Microstrip
Z15
0.510
x 0.080
Microstrip
Board
0.030
Glass Teflon, 2 oz Copper,
3 x 5
Dimensions, Manufacturer;
Arlon, P/N: GX03005522,
r = 2.55
Z6
MRF284 MRF284S
4
MOTOROLA RF DEVICE DATA
Figure 2. Schematic of 2.0 GHz Class A Test Circuit
Z12
Z1
Z2
Z3
Z5
Z10
VSUPPLY
C3
L2
C14
+
C8
B1
R7
C2
L1
C5
Z6
L3
Z7
Z8
DUT
VDD
C16
+
C15
C10
C13
C11
+
L4
Z11
C12
Z13
Z15
Z16
C4
C7
C9
+
R6
R5
Q2
R3
VDD
C1
+
R4
Q1
+
R1
P1
R2
B1 B5
Ferrite Bead, Round
C1, C9, C16
100
F, 50 V, Electrolytic Capacitor, Sprague
C2, C13
51 pF, ATC RF Chip Capacitors, Case "B"
C3, C14
10 pF, ATC RF Chip Capacitors, Case "B"
C4, C11
12 pF, ATC RF Chip Capacitors, Case "B"
C5
0.8 8.0 pF Variable Capacitor, Johansen Gigatrim
C6
4.7 pF, ATC RF Chip Capacitor, Case "B"
C7, C15
91 pF, ATC RF Chip Capacitors, Case "B"
C8
1000 pF, ATC RF Chip Capacitor, Case "B"
C10
0.1
F, Chip Capacitor, KEMET
C12, C17
0.6 4.5 pF, Variable Capacitors, Johansen Gigatrim
L1
4 Turns, #27 AWG, 0.087
OD, 0.050
ID,
0.069
Long, 10 nH
L2
5 Turns, #24 AWG, 0.083
OD, 0.040
ID,
0.128
Long, 12.5 nH
L3, L4
9 Turns, #26 AWG, 0.080
OD, 0.046
ID,
0.170
Long, 30.8 nH
P1
1000 Ohm Potentiometer, 1/2 W, 10 Turns
Q1
Transistor, NPN, Motorola P/N: MJD31, Case 369A10
Q2
Transistor, PNP, Motorola P/N: MJD32, Case 369A10
R1
360
, Fixed Film Chip Resistor 0.08
x 0.13
R2
2 x 12 k
, Fixed Film Chip Resistor 0.08
x 0.13
R3
1
, Wirewound, 5 W, 3% Resistor
R4
4 x 6.8 k
, Fixed Film Chip Resistor 0.08
x 0.13
R5
2 x 1500
, Fixed Film Chip Resistor 0.08
x 0.13
R6
270
, Fixed Film Chip Resistor, 0.08
x 0.13
R7 R11
12
, Fixed Film Chip Resistor, 0.08
x 0.13
Z1
0.363
x 0.080
Microstrip
Z2
0.080
x 0.080
Microstrip
Z3
0.916
x 0.080
Microstrip
Z4
0.517
x 0.080
Microstrip
Z5
0.050
x 0.325
Microstrip
Z6
0.050
x 0.325
Microstrip
Z7
0.071
x 0.325
Microstrip
Z8
0.125
x 0.325
Microstrip
Z9
0.210
x 0.515
Microstrip
Z10
0.210
x 0.515
Microstrip
Z11
0.235
x 0.325
Microstrip
Z12
0.02
x 0.325
Microstrip
Z13
0.02
x 0.325
Microstrip
Z14
0.510
x 0.080
Microstrip
Z15
0.990
x 0.080
Microstrip
Z16
0.390
x 0.080
Microstrip
Raw PCB
Material
0.030
Glass Teflon, 2 oz Copper,
3 x 5
Dimensions, Manufacturer;
Arlon, P/N: GX03005522,
r = 2.55
RF
INPUT
RF
OUTPUT
B2
R8
Z4
C6
Z9
Z14
C17
B3
R9
B4
R10
B5
R11
5
MRF284 MRF284S
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
G
pe
, POWER GAIN (dB)
G
pe
, GAIN (dB)
Figure 3. Output Power & Power Gain
versus Input Power
35
Pin, INPUT POWER (WATTS)
5
0
2.0
15
25
Figure 4. Output Power versus Frequency
10
1840
f, FREQUENCY (MHz)
45
25
15
1.0
3.0
3.5
35
P out
, OUTPUT
POWER (W
A
TTS)
1800
2000
0
P out
, OUTPUT
POWER (W
A
TTS)
30
13
9
6
G
pe
, GAIN (dB)
1880
1920
Figure 5. Intermodulation Distortion
versus Output Power
20
Pout, OUTPUT POWER (WATTS) PEP
80
Figure 6. Power Gain and Intermodulation
Distortion versus Supply Voltage
11
VDD, DRAIN SUPPLY VOLTAGE (Vdc)
8
10
IMD, INTERMODULA
TION
DIST
OR
TION
(dBc)
Figure 7. Intermodulation Distortion
versus Output Power
0.1
Pout, OUTPUT POWER (WATTS) PEP
60
10
30
Figure 8. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
8
1.0
12
10
1.0
0.1
0.1
9
10
11
10
6
20
22
16
40
20
IMD, INTERMODULA
TION
DIST
OR
TION
(dBc)
40
35
IMD, INTERMODULA
TION
DIST
OR
TION
(dBc)
VDD = 26 Vdc
IDQ = 200 mA
f = 2000 MHz Single Tone
40
24
26
28
13
12
30
25
20
15
10
70
60
50
40
20
30
Pout = 30 W (PEP)
IDQ = 200 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
Gpe
Gpe
3rd Order
7th Order
5th Order
Pin = 1 W
4 W
VDD = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
1.0
100 mA
IDQ = 400 mA
300 mA
200 mA
VDD = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
14
11
10
20
30
18
VDD = 26 Vdc
IDQ = 200 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
50
Pout
1.5
0.5
2.5
VDD = 26 Vdc
IDQ = 200 mA
Single Tone
IMD
9
7
100 mA
IDQ = 400 mA
300 mA
200 mA
4.0
7
8
10
12
40
1860
1820
1900
1940 1960 1980
2 W
3 W
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