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Электронный компонент: MRF2947RAT1

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MRF2947AT1,T2 MRF2947RAT1,T2
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
Low Noise Transistors
Motorola's MRF2947 device contains two high performance, lownoise NPN
silicon bipolar transistors. This device has two 941 die housed in the high
performance six leaded SC70ML package; yielding a 9 GHz current
gainbandwidth product.
The RF performance at levels of 1 volt and 1 mA makes the MRF2947 well
suited for lowvoltage, lowcurrent, frontend applications such as paging,
cellular, GSM, DECT, CT2 and other portable wireless systems. The MRF2947
is fully ionimplanted with gold metallization and nitride passivation for
maximum device reliability, performance and uniformity.
Low Noise Figure, NF = 1.5 dB (Typ) @ 1 GHz @ 5 mA
High Current GainBandwidth Product, ft = 9 GHz (Typ) @ 6 Volts, 15 mA
Maximum Stable Gain, 18 dB @ 1 GHz @ 5 mA
Output Third Order Intercept, OIP3 = +27 dBm
Available in Tape and Reel Packaging Options:
T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel
T2 Suffix = 3,000 Units per 8 mm, 7 inch Reel (reverse device
orientation in tape)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
10
Vdc
CollectorBase Voltage
VCBO
20
Vdc
EmitterBase Voltage
VEBO
1.5
Vdc
Power Dissipation (1) TC = 75
C
Derate linearly above TC = 75
C @
PDmax
0.188
2.5
Watts
mW/
C
Collector Current -- Continuous (2)
IC
50
mA
Maximum Junction Temperature
TJmax
150
C
Storage Temperature
Tstg
55 to +150
C
Thermal Resistance, Junction to Case
R
JC
400
C/W
DEVICE MARKINGS
MRF2947AT1,T2 = WU
MRF2947RAT1,T2 = XR
(1) To calculate the junction temperature use TJ = PD x R
JC + TC. The case temperature is measured on collector lead adjacent to the package
body.
(2) IC -- Continuous (MTBF > 10 years).
Order this document
by MRF2947/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF2947AT1,T2
MRF2947RAT1,T2
ICmax = 50 mA
LOW NOISE
TRANSISTORS
CASE 419B01, STYLES 16 & 17
SC70ML/SOT363
Motorola, Inc. 1997
B1
C1
E1
B2
E2
C2
STYLE 16
B1
C1
E2
B2
E1
C2
STYLE 17
MRF2947AT1,T2
MRF2947RAT1,T2
MRF2947AT1,T2 MRF2947RAT1,T2
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(3)
CollectorEmitter Breakdown Voltage
(IC = 0.1 mA, IB = 0)
V(BR)CEO
10
12
--
Vdc
CollectorBase Breakdown Voltage
(IC = 0.1 mA, IE = 0)
V(BR)CBO
20
23
--
Vdc
Emitter Cutoff Current
(VEB = 1 V, IC = 0)
IEBO
--
--
0.1
A
Collector Cutoff Current
(VCB = 10 V, IE = 0)
ICBO
--
--
0.1
A
ON CHARACTERISTICS
(3)
DC Current Gain (VCE = 1 V, IC = 500
A)
hFE1
50
--
--
--
DC Current Gain (VCE = 6 V, IC = 5 mA)
hFE3
75
--
150
--
DYNAMIC CHARACTERISTICS
CollectorBase Capacitance
(VCB = 1 V, IE = 0, f = 1 MHz)
Ccb
--
0.42
--
pF
Current Gain -- Bandwidth Product
(VCE = 6 V, IC = 15 mA, f = 1 GHz)
fT
--
9
--
GHz
PERFORMANCE CHARACTERISTICS
Conditions
Symbol
Min
Typ
Max
Unit
Insertion Gain
(VCE = 1 V, IC = 1 mA, f = 1 GHz)
(VCE = 6 V, IC = 15 mA, f = 1 GHz)
|S21|2
--
--
7
15
--
--
dB
Maximum Unilateral Gain (4)
(VCE = 1 V, IC = 1 mA, f = 1 GHz)
(VCE = 6 V, IC = 15 mA, f = 1 GHz)
GUmax
--
--
13
17
--
--
dB
Maximum Stable Gain and/or Maximum Available Gain (5)
(VCE = 1 V, IC = 1 mA, f = 1 GHz)
(VCE = 6 V, IC = 15 mA, f = 1 GHz)
MSG
MAG
--
--
12
18
--
--
dB
Noise Figure -- Minimum
(VCE = 1 V, IC = 1 mA, f = 1 GHz)
(VCE = 6 V, IC = 5 mA, f = 1 GHz)
NFmin
--
--
1.8
1.5
--
--
dB
Noise Resistance
(VCE = 1 V, IC = 1 mA, f = 1 GHz)
(VCE = 6 V, IC = 5 mA, f = 1 GHz)
RN
--
--
22
17
--
--
Associated Gain at Minimum NF
(VCE = 1 V, IC = 1 mA, f = 1 GHz)
(VCE = 6 V, IC = 5 mA, f = 1 GHz)
GNF
--
--
9
14
--
--
dB
Output Power at 1 dB Gain Compression (6)
(VCE = 6 V, IC = 15 mA, f = 1 GHz)
P1dB
--
+13
--
dBm
Output Third Order Intercept (6)
(VCE = 6 V, IC = 15 mA, f = 1 GHz)
OIP3
--
+27
--
dBm
(3) Pulse width
300
s, duty cycle
2% pulsed.
(4) Maximum unilateral gain is GUmax =
(5) Maximum available gain and maximum stable gain are defined by the K factor as follows:
(6) ZO = 50
and Zout matched for small signal maximum gain.
|S21|2
(1
|S11|2)(1 |S22|2)
, if K > 1
(K
"
K2
1)
MAG =
, if K < 1
MSG =
|S21|
|S12|
|S21|
|S12|
3
MRF2947AT1,T2 MRF2947RAT1,T2
MOTOROLA RF DEVICE DATA
0
2
4
8
10
6
0.8
0
0.2
0.6
VCB, REVERSE VOLTAGE (V)
C, CAP
ACIT
ANCE
(pF)
Figure 1. Capacitance versus Voltage
0
0.4
0.8
1.4
1.2
1.6
1.0
1.8
1.6
1.4
0.8
0
0.2
0.4
VEB, EMITTERBASE VOLTAGE (V)
C
IB
Figure 2. Input Capacitance versus Voltage
TYPICAL CHARACTERISTICS
Cob
Ccb
0.1
1
180
140
100
20
60
100
h
FE
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain versus
Collector Current
10
0.1
1
100
10
10
8
6
4
2
f T
IC, COLLECTOR CURRENT (mA)
Figure 4. GainBandwidth Product versus
Collector Current
Figure 5. Functional Circuit Schematic
, DC CURRENT

GAIN
, GAIN BANDWIDTH PRODUCT
(GHz)
VCE = 1 V
1.4
1.2
1.0
0.4
f = 1 MHz
, INPUT
CAP
ACIT
ANCE
1.2
1.0
0.6
f = 1 MHz
0.2
0.6
2.0
CIb
160
120
80
40
VCE = 6 V
f = 1 GHz
9
7
5
3
1
RF
OUTPUT
Pout
RF
INPUT
Pin
VBE
BIAS NETWORK
*SLUG TUNER
DUT
*SLUG TUNER
VCE
BIAS NETWORK
*MICROLAB/FXR
SF11N < 1 GHz
SF31N > 1 GHz
MRF2947AT1,T2 MRF2947RAT1,T2
4
MOTOROLA RF DEVICE DATA
0.1
1
10
20
0
5
15
f, FREQUENCY (GHz)
Figure 6. Maximum Stable/Available Gain
versus Frequency
0.1
1
35
20
0
5
10
f, FREQUENCY (GHz)
Figure 7. Maximum Stable/Available Gain
versus Frequency
TYPICAL CHARACTERISTICS
MSG
0.1
1
40
30
20
5
10
10
f, FREQUENCY (GHz)
Figure 8. Maximum Unilateral Gain and
Forward Insertion Gain versus Frequency
0.1
1
10
40
30
20
10
f, FREQUENCY (GHz)
Figure 9. Maximum Unilateral Gain and
Forward Insertion Gain versus Frequency
GUmax
35
30
25
10
MSG, MAXIMUM ST
ABLE GAIN; MAG,
30
25
15
10
35
25
15
5
35
25
15
5
0
0.1
1
18
14
10
6
100
IC, COLLECTOR CURRENT (mA)
Figure 10. Maximum Unilateral Gain and
Forward Insertion Gain versus Collector Current
10
0.1
1
100
10
20
16
12
8
4
IC, COLLECTOR CURRENT (mA)
Figure 11. Maximum Unilateral Gain and
Forward Insertion Gain versus Collector Current
16
12
8
4
VCE = 6 V
f = 1 GHz
18
14
10
6
MAXIMUM
A
V
AILABLE GAIN (dB)
21
S
2 , FOR
W
ARD
INSER
TION GAIN; G
Umax
,
MAXIMUM
UNILA
TERAL
GAIN (dB)
MSG, MAXIMUM ST
ABLE GAIN; MAG,
MAXIMUM
A
V
AILABLE GAIN (dB)
VCE = 1 V
IC = 1 mA
MAG
VCE = 6 V
IC = 5 mA
MSG
MSG
MAG
S21
2
VCE = 1 V
IC = 1 mA
0
S21
2
GUmax
VCE = 6 V
IC = 5 mA
VCE = 1 V
f = 1 GHz
GUmax
S21
2
GUmax
S21
2
21
S
2 , FOR
W
ARD
INSER
TION GAIN; G
Umax
,
MAXIMUM
UNILA
TERAL
GAIN (dB)
21
S
2 , FOR
W
ARD
INSER
TION GAIN; G
Umax
,
MAXIMUM
UNILA
TERAL
GAIN (dB)
21
S
2 , FOR
W
ARD
INSER
TION GAIN; G
Umax
,
MAXIMUM
UNILA
TERAL
GAIN (dB)
5
MRF2947AT1,T2 MRF2947RAT1,T2
MOTOROLA RF DEVICE DATA
0.1
1
100
10
14
IC, COLLECTOR CURRENT (mA)
Figure 12. Maximum Stable/Available Gain
versus Collector Current
0.1
1
22
16
10
12
IC, COLLECTOR CURRENT (mA)
Figure 13. Maximum Stable/Available Gain
versus Collector Current
TYPICAL CHARACTERISTICS
MSG
0.1
1
20
0
10
10
f, FREQUENCY (GHz)
Figure 14. Minimum Noise Figure and
Associated Gain versus Frequency
0.1
1
10
20
10
f, FREQUENCY (GHz)
Figure 15. Minimum Noise Figure and
Associated Gain versus Frequency
GNF
20
18
16
12
MSG, MAXIMUM ST
ABLE GAIN; MAG,
20
18
14
100
25
15
5
25
15
5
0
0.1
1
14
10
6
100
IC, COLLECTOR CURRENT (mA)
Figure 16. Minimum Noise Figure and
Associated Gain versus Collector Current
10
0.1
1
100
10
16
12
8
IC, COLLECTOR CURRENT (mA)
Figure 17. Minimum Noise Figure and
Associated Gain versus Collector Current
16
12
8
VCE = 6 V
f = 1 GHz
18
14
10
6
MAXIMUM
A
V
AILABLE GAIN (dB)
NF
G
,

ASSOCIA
TED GAIN (dB)
MSG, MAXIMUM ST
ABLE GAIN; MAG,
MAXIMUM
A
V
AILABLE GAIN (dB)
VCE = 1 V
f = 1 GHz
MAG
VCE = 6 V
f = 1 GHz
MSG
MAG
VCE = 1 V
IC = 1 mA
VCE = 6 V
IC = 5 mA
VCE = 1 V
f = 1 GHz
10
10
min
NF
, MINIMUM NOISE FIGURE (dB)
4
0
2
5
3
1
NFmin
GNF
NFmin
4
0
2
5
3
1
4
0
2
5
3
1
NFmin
GNF
NFmin
GNF
4
0
2
5
3
1
NF
G
,

ASSOCIA
TED GAIN (dB)
min
NF
, MINIMUM NOISE FIGURE (dB)
NF
G
,

ASSOCIA
TED GAIN (dB)
min
NF
, MINIMUM NOISE FIGURE (dB)
6
NF
G
,

ASSOCIA
TED GAIN (dB)
min
NF
, MINIMUM NOISE FIGURE (dB)