1
MRF555
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
RF Low Power Transistor
Designed primarily for wideband large signal predriver stages in the UHF
frequency range.
Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W
Common Emitter Power Gain = 12.5 dB (Typ)
Efficiency 60% (Typ)
Cost Effective PowerMacro Package
Electroless Tin Plated Leads for Improved Solderability
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
16
Vdc
CollectorBase Voltage
VCBO
36
Vdc
EmitterBase Voltage
VEBO
4.0
Vdc
Collector Current -- Continuous
IC
400
mAdc
Operating Junction Temperature
TJ
150
C
Total Device Dissipation @ TC = 75
C (1, 2)
Derate above 75
C
PD
3.0
40
Watts
mW/
C
Storage Temperature Range
Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
25
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
V(BR)CEO
16
--
--
Vdc
CollectorEmitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0)
V(BR)CES
36
--
--
Vdc
EmitterBase Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
4.0
--
--
Vdc
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25
C)
ICES
--
--
0.1
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
hFE
50
90
200
--
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
Cob
--
3.5
5.0
pF
NOTES:
(continued)
1. TC, Case temperature measured on collector lead immediately adjacent to body of package.
2. The MRF555 PowerMacro must be properly mounted for reliable operation. AN938, "Mounting Techniques in PowerMacro Transistor,"
discusses methods of mounting and heatsinking.
Order this document
by MRF555/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF555
1.5 W, 470 MHz
RF LOW POWER
TRANSISTOR
NPN SILICON
CASE 317D02, STYLE 2
Motorola, Inc. 1995
REV 7
MRF555
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS -- continued
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS
(f = 470 MHz)
CommonEmitter Power Gain
(VCC = 12.5 Vdc, Pout = 1.5 W)
Gpe
11
12.5
--
dB
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 1.5 W)
c
50
60
--
%
Load Mismatch Stress
(VCC = 15.5 Vdc, Pin = 125 mW,
VSWR
10:1 all phase angles)
No Degradation in Output Power
Figure 1. 400 512 MHz Broadband Circuit
*C1, C3, C6 -- 0.8 11 pF Johanson
C2 -- 15 pF Clamped Mica, MiniUnderwood
C4 -- 36 pF Clamped Mica, MiniUnderwood
C5 -- 470 pF Ceramic Chip Capacitor
C7 -- 91 pF Clamped Mica, MiniUnderwood
C8 -- 68 pF Clamped Mica, MiniUnderwood
C9 -- 1.0
F, 25 V Tantalum
B -- Bead, Ferroxcube 5659065/3B
*Fixed tuned for broadband response
L1 -- 5 Turns #21 AWG, 5/32
I.D.
L2, L3 -- 60 x 125 x 250 Mils Copper Pad on 27 Mil Thick
L2, L3 --
Alumina Substrate
L4, L5 -- 7 Turns #21 AWG 5/32
I.D.
Z1 -- 1.29
x 0.16
Microstrip
Z2 -- 0.70
x 0.16
Microstrip
Z3 -- 2.18
x 0.16
Microstrip
PCB -- 1/16
Glass Teflon, 1 oz. cu. clad,
PCB --
double sided,
r = 2.5
Figure 2. Performance in Broadband Circuit
RF
POWER
INPUT
RF
POWER
OUTPUT
B
D.U.T.
Z1
Z2
Z3
C1
C2
C3
C4
L2
L3
C7
L4
B
L5
C8
C9
+
+
C5
C6
G
pe
, POWER GAIN (dB)
c
, COLLECT
OR
20
16
12
8
0
4
400
65
60
f, FREQUENCY (MHz)
425
450
475
500
525
20
15
10
55
EFFICIENCY
%
IRL, INPUT
RETURN LOSS
(dB)
Gpe
c
IRL
Pout = 1.5 W
VCC = 12.5 Vdc
VCC
L1
3
MRF555
MOTOROLA RF DEVICE DATA
f
Frequency
MHz
Zin
Ohms
ZOL*
Ohms
f
Frequency
MHz
VCC = 7.5 V
VCC = 12.5 V
VCC = 7.5 V
VCC = 12.5 V
f
Frequency
MHz
Pin = 100 mW
Pin = 50 mW
Pout 400 MHz = 1.5 W
Pout 450 MHz = 1.35 W
Pout 512 MHz = 1.05 W
Pout 400 MHz = 1.9 W
Pout 450 MHz = 1.45 W
Pout 512 MHz = 0.9 W
400
2.9 j2.7
1.9 j3.1
18.0 j13.4
12.2 j19.7
450
2.2 j0.8
2.6 j4.0
21.6 = j9.9
20.2 j18.6
512
3.5 j1.2
2.6 j2.6
20.1 j1.0
23.4 j23.0
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency.
Table 1. Zin and ZOL versus Collector Voltage, Input Power and Output Power
MRF555
4
MOTOROLA RF DEVICE DATA
Figure 3. Power Output versus Power Input
Figure 4. Power Output versus Frequency
Figure 5. Power Output versus Frequency
Figure 6. Power Output versus Supply Voltage
Figure 7. Power Output versus Supply Voltage
Figure 8. Power Output versus Supply Voltage
P
, POWER OUTPUT
(W)
out
2.5
2
1.5
1
0.5
50
0
Pin, POWER INPUT (mW)
7.5 Vdc
VCC = 12.5 Vdc
100
150
200
P
, POWER OUTPUT
(W)
out
2.5
2
1.5
1
0.5
425
400
f, FREQUENCY (MHz)
450
475
500
525
VCC = 7.5 Vdc
Pin = 150 mW
f = 400 MHz
100 mW
P
, POWER OUTPUT
(W)
out
4
3
2
1
0
0
0
425
400
f, FREQUENCY (MHz)
450
475
500
525
VCC = 12.5 Vdc
Pin = 150 mW
8
6
VCC, SUPPLY VOLTAGE (Vdc)
10
12
14
16
P
, POWER OUTPUT
(W)
out
4
3
2
1
0
Pin = 150 mW
8
6
VCC, SUPPLY VOLTAGE (Vdc)
10
12
14
16
P
, POWER OUTPUT
(W)
out
4
3
2
1
0
f = 450 MHz
Pin = 150 mW
8
6
VCC, SUPPLY VOLTAGE (Vdc)
10
12
14
16
P
, POWER OUTPUT
(W)
out
4
3
2
1
0
f = 512 MHz
Pin = 150 mW
50 mW
100 mW
50 mW
100 mW
50 mW
100 mW
50 mW
100 mW
50 mW
5
MRF555
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 317D02
ISSUE C
STYLE 2:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
4. EMITTER
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION N AND R.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
C
0.075
0.100
1.91
2.54
D
0.033
0.039
0.84
0.99
F
0.097
0.104
2.46
2.64
H
0.348
0.383
8.84
9.72
J
0.008
0.012
0.24
0.30
K
0.285
0.320
7.24
8.12
N
0.065
1.65
R
0.128
3.25
T
0.025
0.040
0.64
1.01
F
D
K
H
R
A
1
2
4
3
T
SEATING
PLANE
J
C
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