1
MRF557
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
RF Low Power Transistor
Designed primarily for wideband large signal predriver stages in the
800 MHz frequency range.
Specified @ 12.5 V, 870 MHz Characteristics
Output Power = 1.5 W
Minimum Gain = 8.0 dB
Efficiency 60% (Typ)
Cost Effective PowerMacro Package
Electroless Tin Plated Leads for Improved Solderability
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
16
Vdc
CollectorBase Voltage
VCBO
36
Vdc
EmitterBase Voltage
VEBO
4.0
Vdc
Collector Current -- Continuous
IC
400
mAdc
Total Device Dissipation @ TC = 75
C (1, 2)
Derate above 75
C
PD
3.0
40
Watts
mW/
C
Storage Temperature Range
Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
25
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
V(BR)CEO
16
--
--
Vdc
CollectorEmitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0)
V(BR)CES
36
--
--
Vdc
EmitterBase Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
4.0
--
--
Vdc
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25
C)
ICES
--
--
0.1
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
hFE
50
90
200
--
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
Cob
--
3.5
5.0
pF
NOTES:
(continued)
1. TC, Case temperature measured on collector lead immediately adjacent to body of package.
2. The MRF557 PowerMacro must be properly mounted for reliable operation. AN938, "Mounting Techniques in PowerMacro Transistor,"
discusses methods of mounting and heatsinking.
Order this document
by MRF557/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF557
1.5 W, 870 MHz
RF LOW POWER
TRANSISTOR
NPN SILICON
CASE 317D02, STYLE 2
Motorola, Inc. 1995
REV 7
MRF557
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS -- continued
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS
CommonEmitter Amplifier Power Gain
Figures 1, 2
(VCC = 12.5 Vdc, Pout = 1.5 W, f = 870 MHz)
Gpe
8.0
9.0
--
dB
Collector Efficiency
Figures 1, 2
(VCC = 12.5 Vdc, Pout = 1.5 W, f = 870 MHz)
c
55
60
--
%
Load Mismatch Stress
Figures 1, 2
(VCC = 15.5 Vdc, Pin = 225 mW, f = 870 MHz,
VSWR
10:1 all phase angles)
No Degradation in Output Power
Figure 1. 800 880 MHz Broadband Circuit
C1, C2, C5, C7 -- 0.8 8.0 pF Johanson Gigatrim*
C3, C4 -- 15 pF Clamped Mica, MiniUnderwood
C6 -- 27 pF Clamped Mica, MiniUnderwood
C8 -- 91 pF Clamped Mica, MiniUnderwood
C9 -- 68 pF Clamped Mica, MiniUnderwood
C10 -- 1.0
F, 25 V Tantalum
B -- Bead, Ferroxcube 5659065/3B
PCB -- 1/16
Glass Teflon,
r = 2.56
*Fixed tuned for broadband response.
L1, L4 -- 5 Turns #21 AWG, 5/32
ID
L2, L3 -- 60 x 125 x 250 Mils Copper Tab on
L2, L3 --
27 Mil Thick Alumina Substrate
L5 -- 7 Turns #21 AWG, 5/32
ID
Z1 -- 1.65 x 0.163
Microstrip, Zo = 50
Z2 -- 0.85 x 0.163
Microstrip, Zo = 50
Z3 -- 0.625 x 0.163
Microstrip, Zo = 50
Z4 -- 1.35 x 0.163
Microstrip, Zo = 50
B
B
RF
POWER
INPUT
RF
POWER
OUTPUT
D.U.T.
Z1
+
Z2
Z3
Z4
C10
+
C9
L5
C8
L4
L3
L2
L1
C1
C2
C3
C4
C5
C7
C6
VCC
3
MRF557
MOTOROLA RF DEVICE DATA
Figure 2. Performance in Broadband Circuit
Gpe
c
IRL
G
pe
, POWER GAIN (dB)
c
, COLLECT
OR EFFICIENCY
(%)
16
14
12
10
8
6
4
2
900
80
70
60
50
40
30
20
10
0
f, FREQUENCY (MHz)
10
15
20
5
IRL, INPUT
RETURN LOSS (dB)
880
860
840
820
800
0
f
Frequency
MHz
Zin
Ohms
ZOL*
Ohms
f
Frequency
MHz
VCC = 7.5 V
VCC = 12.5 V
VCC = 7.5 V
VCC = 12.5 V
f
Frequency
MHz
Pin = 300 mW
Pin = 200 mW
Pout 806 MHz = 1.7 W
Pout 870 MHz = 1.4 W
Pout 960 MHz = 1.0 W
Pout 806 MHz = 2.1 W
Pout 870 MHz = 1.8 W
Pout 960 MHz = 1.1 W
806
2.4 + j3.9
2.4 + j3.1
14.7 j4.4
13.6 j12.8
870
2.5 + j4.6
2.7 + j3.7
17.2 j8.6
16 j13.2
960
6.1 + j7.4
6.8 + j8.3
40 j8.3
38 j10.5
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency.
Table 1. Zin and ZOL versus Collector Voltage, Input Power and Output Power
MRF557
4
MOTOROLA RF DEVICE DATA
800
Figure 3. Power Output versus Power Input
Figure 4. Power Output versus Frequency
Figure 5. Power Output versus Frequency
Figure 6. Power Output versus Supply Voltage
Figure 7. Power Output versus Supply Voltage
Figure 8. Power Output versus Supply Voltage
P
, POWER OUTPUT
(W
A
TTS)
out
2.5
2
1.5
1
0.5
100
0
Pin, POWER INPUT (mW)
VCC = 12.5 Vdc
P
, POWER OUTPUT
(W
A
TTS)
out
2.5
2
1.5
1
0.5
800
f, FREQUENCY (MHz)
P
, POWER OUTPUT
(W
A
TTS)
out
0
0
f, FREQUENCY (MHz)
8
6
VCC, SUPPLY VOLTAGE (VOLTS)
10
12
14
16
P
, POWER OUTPUT
(W
A
TTS)
out
4
3
2
1
0
8
6
VCC, SUPPLY VOLTAGE (VOLTS)
10
12
14
16
P
, POWER OUTPUT
(W
A
TTS)
out
4
3
2
1
0
f = 870 MHz
8
6
VCC, SUPPLY VOLTAGE (VOLTS)
10
12
14
16
P
, POWER OUTPUT
(W
A
TTS)
out
4
3
2
1
0
200
300
400
7.5 Vdc
f = 870 MHz
820
840
860
880
900
920
940
960
Pin = 300 mW
200 mW
100 mW
VCC = 7.5 Vdc
2.5
2
1.5
1
0.5
0
820
840
860
880
900
920
940
960
200 mW
100 mW
Pin = 300 mW
VCC = 12.5 Vdc
f = 806 MHz
200 mW
100 mW
Pin = 300 mW
200 mW
100 mW
Pin = 300 mW
f = 960 MHz
200 mW
100 mW
Pin = 300 mW
5
MRF557
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 317D02
ISSUE C
STYLE 2:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
4. EMITTER
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION N AND R.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
C
0.075
0.100
1.91
2.54
D
0.033
0.039
0.84
0.99
F
0.097
0.104
2.46
2.64
H
0.348
0.383
8.84
9.72
J
0.008
0.012
0.24
0.30
K
0.285
0.320
7.24
8.12
N
0.065
1.65
R
0.128
3.25
T
0.025
0.040
0.64
1.01
F
D
K
H
R
A
1
2
4
3
T
SEATING
PLANE
J
C
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