1
MRF6414
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
RF Power Transistor
The MRF6414 is designed for 26 volt UHF large signal, common emitter,
class AB linear amplifier applications.
Specified 26 Volt, 960 MHz Characteristics
Output Power = 50 Watts
Minimum Gain = 8.5 dB @ 960 MHz, Class AB
Minimum Efficiency = 50% @ 960 MHz, 50 Watts
Silicon Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Circuit Board Photomaster Available by Ordering Document
MRF6414PHT/D from Motorola Literature Distribution.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
28
Vdc
CollectorBase Voltage
VCBO
65
Vdc
EmitterBase Voltage
VEBO
4
Vdc
CollectorCurrent -- Continuous
IC
6
Adc
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
134
0.77
Watts
W/
C
Storage Temperature Range
Tstg
65 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.3
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 20 mAdc, IB = 0)
V(BR)CEO
28
--
--
Vdc
CollectorBase Breakdown Voltage (IC = 20 mAdc, IE = 0)
V(BR)CBO
65
--
--
Vdc
EmitterBase Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
4
--
--
Vdc
CollectorEmitter Leakage Current (VCE = 30 Vdc, RBE = 75
)
ICER
--
--
10
mAdc
ON CHARACTERISTICS
DC Current Gain (ICE = 1 Adc, VCE = 5 Vdc)
hFE
30
--
120
--
Order this document
by MRF6414/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF6414
50 W, 960 MHz
RF POWER TRANSISTOR
NPN SILICON
CASE 333A 02, STYLE 2
Motorola, Inc. 1995
MRF6414
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS -- continued
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 Vdc, IE = 0, f = 1 MHz) (1)
Cob
--
45
--
pF
FUNCTIONAL TESTS
CommonEmitter Amplifier Power Gain
(VCC = 26 Vdc, Pout = 50 W, ICQ = 200 mA, f = 960 MHz)
Gpe
8.5
--
--
dB
Collector Efficiency
(VCC = 26 Vdc, Pout = 50 W, ICQ = 200 mA, f = 960 MHz)
50
55
--
%
Output Mismatch Stress
(VCC = 26 Vdc, Pout = 50 W, ICQ = 200 mA, f = 960 MHz)
VSWR = 3:1; all phase angles at frequency of test
No Degradation in Output Power
(1) For information only. It is not measurable in MRF6414 because of internal matching network.
C9
P1
T2
Figure 1. 960 MHz Test Circuit Schematic
C1, C3
100 pF, Chip Capacitor, Hight Q
C2, C7
330 pF, Chip Capacitor, 0805
C5, C8
10 nF, Chip Capacitor, 0805
C6
15
m
F, Capacitor, 63 V
C9
100
m
F, Capacitor, 16 V
D1, D2
Diode 1N4007
P1
1 k
, Trimmer
R1
1 k
,
Resistor
R2
58
,
Resistor, 0805
T1
MRF6414
T2
Transistor NPN Type BD135
C8
C7
C1
R2
RF INPUT
50
W
C2
D1
D2
T1
C3
C4
C5
C6
RF OUTPUT
50
W
+VCC
R1
3
MRF6414
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
Figure 2. Output Power versus Input Power (Typical)
70
Pin, INPUT POWER (WATTS)
0
2
10
50
30
Figure 3. Output Power versus Frequency
940
f, FREQUENCY (MHz)
980
4
8
P out
, OUTPUT
POWER (W
A
TTS)
Figure 4. Output Power versus Supply Voltage
Vdc, SUPPLY VOLTAGE (VOLTS)
Figure 5. Typical Broadband Amplifier
12
f, FREQUENCY (MHz)
940
9
7
920
930
900
0
4
5
6
P out
, OUTPUT
POWER (W
A
TTS)
6
10
960
920
20
20
50
30
60
40
30
18
960
60
40
20
70
0
10
50
30
60
40
20
10
8
950
970
VCC = 26 V
IQ = 200 mA
f = 960 MHz
VCC = 26 V
IQ = 200 mA
IQ = 200 mA
f = 960 MHz
3 W
Pin = 5 W
Pin = 5 W
P out
, OUTPUT
POWER (W
A
TTS)
65
70
55
60
45
50
35
40
G , POWER GAIN (dB)
pe
1.6
1.2
1.4
22
24
26
28
32
Gpe
VSWR
MRF6414
4
MOTOROLA RF DEVICE DATA
Figure 6. 960 MHz Test Circuit Components Layout
C9
C8
C7
INPUT
OUTPUT
MRF6414
C1
C2
C6
C4
C5
C3
FB
f
MHz
Zin
Ohms
ZOL*
Ohms
900
935
960
4.4 + j4.6
5.4 + j3.6
5.1 + j4.8
4.7 + j4.7
4.0 + j3.9
3.7 + j4.5
ZOL*: Conjugate of optimum load impedance into
which the device operates at a given output
power, voltage, current and frequency.
Zin
Z*load
Normalized to 10
W
980
4.7 + j2.5
3.4 + j4.7
Figure 7. Input and Output Impedances with Circuit Tuned for Maximum Gain
@ VCC = 26 V, IQ = 200 mA, Pout = 50 W
5
MRF6414
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.965
0.985
24.52
25.01
INCHES
B
0.390
0.410
9.91
10.41
C
0.250
0.290
6.35
7.36
D
0.075
0.090
1.91
2.28
E
0.095
0.115
2.42
2.92
F
0.110
0.130
2.80
3.30
H
0.155
0.175
3.94
4.44
J
0.004
0.006
0.11
0.15
K
0.090
0.116
2.29
2.94
L
0.725 BSC
18.41 BSC
N
0.415
0.435
10.55
11.04
Q
0.120
0.135
3.05
3.42
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 2:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. EMITTER
5. COLLECTOR
6. EMITTER
IDENTIFICATION
NOTCH
N
L
E
J
H
C
SEATING
PLANE
1
2
3
4
5
6
K
2 PL
D
4 PL
F
2 PL
Q
2 PL
B
M
A
M
0.13 (0.005)
B
M
T
A
T
CASE 333A02
ISSUE C
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