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Электронный компонент: MRF842

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1
MRF842
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
RF Power Transistor
. . . designed for 12.5 volt UHF largesignal, commonbase amplifier applica-
tions in industrial and commercial FM equipment operating in the range of
806 960 MHz.
Specified 12.5 Volt, 870 MHz Characteristics
Output Power = 20 Watts
Power Gain = 6.0 dB Min
Efficiency = 50% Min
Series Equivalent LargeSignal Characterization
Internally Matched Input for Broadband Operation
100% Tested for Load Mismatch Stress at All Phase Angles with 20:1
VSWR @ 15.5 Volt Supply and 50% RF Overdrive
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Silicon Nitride Passivated
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
16
Vdc
CollectorBase Voltage
VCBO
36
Vdc
EmitterBase Voltage
VEBO
4.0
Vdc
Collector Current -- Continuous
IC
7.6
Adc
Total Device Dissipation @ TC = 25
C (1)
Derate above 25
C
PD
80
0.64
Watts
W/
C
Storage Temperature Range
Tstg
65 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (2)
R
JC
1.5
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
V(BR)CEO
16
--
--
Vdc
CollectorEmitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V(BR)CES
36
--
--
Vdc
EmitterBase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
4.0
--
--
Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ICBO
--
--
5.0
mAdc
NOTES:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Order this document
by MRF842/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF842
20 W, 870 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 31907, STYLE 1
Motorola, Inc. 1994
REV 6
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MRF842
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS -- continued
(TC = 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 Adc, VCE = 5.0 Vdc)
hFE
10
--
--
--
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
Cob
--
45
65
pF
FUNCTIONAL TESTS
CommonBase Amplifier Power Gain
(Pout = 20 W, VCC = 12.5 Vdc, f = 870 MHz)
GPB
6.0
7.0
--
dB
Collector Efficiency
(Pout = 20 W, VCC = 12.5 Vdc, f = 870 MHz)
50
55
--
%
Load Mismatch Stress
(VCC = 15.5 Vdc, Pin (3) = 6.0 W, f = 870 MHz,
VSWR = 20:1, all phase angles)
--
No Degradation in Output Power
NOTE:
3. Pin = 150% of the typical input power requirement for 20 W output power @ 12.5 Vdc.
Figure 1. 870 MHz Test Circuit Schematic
B -- Ferrite Bead, Ferroxcube 56590653B
C1, C11 -- 51 pF, 100 Mil Chip Capacitor
C2, C13 -- 15
F, 20 WV Tantalum
C3, C12 -- 1000 pF Unelco J101
C4, C10 -- 91 pF MiniUnderwood
C5 -- 15 pF MiniUnderwood
C6 -- 12 pF MiniUnderwood
C7, C8 -- 21 pF MiniUnderwood
C9 -- 11 pF MiniUnderwood
L1, L4 -- 11 Turns #20 AWG Over 10 ohm 1/2 W Carbon
L2, L3 -- 4 Turns #20 AWG, 200 Mil ID
TL1, TL4 -- Micro Strip, Zo = 50
TL2 -- Micro Strip, Zo = 38
,
/4 @ 838 MHz
TL3 -- Micro Strip, Zo = 24
,
/4 @ 838 MHz
Board -- 0.032
Glass Teflon
Board --
2 oz. Cu CLAD,
r = 2.55
C2
L4
C3
L1
L2
C12
C13
B
B
C1
C11
TL4
C9
C6
L3
C4
C10
TL3
TL2
TL1
+12.5 Vdc
VRE
PORT
C5
C7
C8
D.U.T.
+
+
SOCKET
SOCKET
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3
MRF842
MOTOROLA RF DEVICE DATA
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Frequency
Figure 4. Output Power versus Supply Voltage
6
8
10
12
14
16
0
VCC, SUPPLY VOLTAGE (VOLTS)
800
900
Pin, INPUT POWER (WATTS)
f, FREQUENCY (MHz)
8
VCC = 12.5 V
820
840
860
880
5
10
12
14
16
18
20
22
24
26
28
Pin = 6 W
5
20
25
30
35
40
P
, OUTPUT
POWER (W
A
TTS)
out
P
, OUTPUT
POWER (W
A
TTS)
out
6
26
P
, OUTPUT
POWER (W
A
TTS)
out
3
2.5
2
1.5
1
3.5
6
10
15
7
9
11
13
15
4 W
Pin = 6 W
VCC = 12.5 Vdc
f = 870 MHz
4.5
5.5
4
8
10
12
14
16
18
20
22
24
2 W
4 W
2 W
f = 870 MHz
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MRF842
4
MOTOROLA RF DEVICE DATA
Figure 5. Series Equivalent Input/Output Impedance
f = 800 MHz
ZOL*
Zin
870
900
836
836
0
0.5
870
f = 800 MHz
900
f
MHz
Zin
Ohms
ZOL*
Ohms
800
836
870
900
1.1 + j4.1
1.2 + j4.3
1.4 + j4.4
1.6 + j4.5
1.9 + j1.5
1.85 + j1.6
1.8 + j1.7
1.8 + j1.8
ZOL* = Conjugate of the optimum load impedance
ZOL* =
into which the device output operates at a
ZOL* =
given output power, voltage and frequency.
Pout = 20 W, VCC = 12.5 Vdc
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
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5
MRF842
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 31907
ISSUE M
0.965
0.355
0.230
0.115
0.102
0.075
0.160
0.004
0.090
0.225
0.125
0.985
0.375
0.260
0.125
0.114
0.085
0.170
0.006
0.110
0.241
0.135
24.52
9.02
5.85
2.93
2.59
1.91
4.07
0.11
2.29
5.72
3.18
25.01
9.52
6.60
3.17
2.90
2.15
4.31
0.15
2.79
6.12
3.42
M
M
MIN
MIN
MAX
MAX
INCHES
MILLIMETER
DIM
A
B
C
D
E
F
H
J
K
L
N
Q
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.725 BSC
18.42 BSC
SEATING
PLANE
IDENTIFICATION
NOTCH
1
2
3
4
5
6
F
J
B
H
E
K
L
0.15 (0.006)
T A
N
M
-A-
-N-
-T-
Q
2 PL
D
2 PL
M
M
0.38 (0.015)
T
A
N
M
M
M
0.38 (0.015)
T
A
N
M
C
PIN 1. BASE (COMMON)
2. EMITTER (INPUT)
3. BASE (COMMON)
4. BASE (COMMON)
5. COLLECTOR (OUTPUT)
6. BASE (COMMON)
STYLE 1: