1
MRF9045R1 MRF9045LSR1
MOTOROLA RF DEVICE DATA
The RF SubMicron MOSFET Line
RF Power Field Effect Transistors
NChannel EnhancementMode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for largesignal, commonsource amplifier applications in
28 volt base station equipment.
Typical TwoTone Performance at 945 MHz, 28 Volts
Output Power -- 45 Watts PEP
Power Gain -- 18.8 dB
Efficiency -- 42%
IMD -- 32 dBc
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent LargeSignal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40
Nominal.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
V
DSS
65
Vdc
GateSource Voltage
V
GS
0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
C
MRF9045R1
Derate above 25
C
MRF9045LSR1
P
D
125
0.71
175
1
Watts
W/
C
Storage Temperature Range
T
stg
65 to +150
C
Operating Junction Temperature
T
J
200
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
MRF9045R1
MRF9045LSR1
R
JC
1.4
1.0
C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M1 (Minimum)
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF9045/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF9045R1
MRF9045LSR1
945 MHz, 45 W, 28 V
LATERAL NCHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B05, STYLE 1
NI360
MRF9045R1
CASE 360C05, STYLE 1
NI360S
MRF9045LSR1
Motorola, Inc. 2002
REV 7
MRF9045R1 MRF9045LSR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
1
Adc
GateSource Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 150
Adc)
V
GS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 350 mAdc)
V
GS(Q)
--
3.7
--
Vdc
DrainSource OnVoltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
V
DS(on)
--
0.19
0.4
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
g
fs
--
4
--
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 28 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
iss
--
69
--
pF
Output Capacitance
(V
DS
= 28 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
--
37
--
pF
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
1.5
--
pF
(continued)
3
MRF9045R1 MRF9045LSR1
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS -- continued
(T
C
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
TwoTone CommonSource Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
G
ps
17
18.8
--
dB
TwoTone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
38
42
--
%
3rd Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
--
32
28
dBc
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
--
14
9
dB
TwoTone CommonSource Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
G
ps
--
18.5
--
dB
TwoTone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
--
41
--
%
3rd Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD
--
33
--
dBc
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL
--
13
--
dB
Power Output, 1 dB Compression Point
(V
DD
= 28 Vdc, P
out
= 45 W CW, I
DQ
= 350 mA,
f1 = 945.0 MHz)
P
1dB
--
55
--
W
CommonSource Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 45 W CW, I
DQ
= 350 mA,
f1 = 945.0 MHz)
G
ps
--
18
--
dB
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 45 W CW, I
DQ
= 350 mA,
f1 = 945.0 MHz)
--
60
--
%
Output Mismatch Stress
(V
DD
= 28 Vdc, P
out
= 45 W CW, I
DQ
= 350 mA,
f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency
of Tests)
No Degradation In Output Power
MRF9045R1 MRF9045LSR1
4
MOTOROLA RF DEVICE DATA
Figure 1. 930 960 MHz Broadband Test Circuit Schematic
Z4
0.360
x 0.320 Microstrip
Z5
0.240
x 0.320 x 0.620, Taper
Z6
0.140
x 0.620 Microstrip
Z7
0.510
x 0.620 Microstrip
Z8
0.330
x 0.320 Microstrip
Z9
0.140
x 0.320 Microstrip
Z10
0.070
x 0.080 Microstrip
Z11
0.240
x 0.080 Microstrip
Z12
0.140
x 0.080 Microstrip
Z13
0.930
x 0.080 Microstrip
Z14
0.180
x 0.080 Microstrip
Z15
0.350
x 0.080 Microstrip
PCB
Arlon GX03005522, 0.03
,
r
= 2.55
B1
Short Ferrite Bead Surface Mount
B2
Long Ferrite Bead Surface Mount
C1, C7, C13, C14
47 pF Chip Capacitors, B Case
C2, C3, C11
0.88.0 pF Gigatrim Variable Trim Capacitors
C4, C5, C8, C9
10 pF Chip Capacitors, B Case
C6, C15, C16
10
F, 35 V Tantalum Surface Mount Chip Capacitors
C10
2.2 pF Chip Capacitor, B Case
C12
0.7 pF Chip Capacitor, B Case MRF9045LS
1.3 pF Chip Capacitor, B Case MRF9045
C17
220
F, 50 V Electrolytic Capacitor
L1, L2
12.5 nH Surface Mount Inductors, Coilcraft
Z1
0.260
x 0.080 Microstrip
Z2
0.610
x 0.120 Microstrip
Z3
0.260
x 0.320 Microstrip
B1
C1
RF
INPUT
RF
OUTPUT
V
GG
V
DD
C6
L1
Z5
Z4
Z3
C2
Z2
Z1
Z7
C8
C9
Z8
Z9
Z10
C13
Z15
L2
C14
B2
C15
C16
C17
C5
C4
Z6
+
+
C7
+
+
Z14
C12
C10
C3
C11
Z11
Z12
Z13
Figure 2. 930 960 MHz Broadband Test Circuit Component Layout
CUT
OUT
AREA
WB1
WB2
C1
C2
C3
C5
C6
C7
C8
C9
C10
C4
C11
C12
C13
C14
C15 C16
C17
L1
L2
B1
B2
Rev-01
900 MHz
V
DD
V
GG
MRF9045
5
MRF9045R1 MRF9045LSR1
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
1
10
100
13
14
15
16
17
18
19
20
0.1
0
10
20
30
40
50
60
70
P
out
, OUTPUT POWER (WATTS) PEP
f, FREQUENCY (MHz)
G
ps
, POWER GAIN (dB)
930
20
Figure 3. Class AB Broadband Circuit Performance
16
13
12
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus
Output Power
17
15
14
19
18
935
940
945
950
955
960
P
out
, OUTPUT POWER (WATTS) PEP
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Power Gain, Efficiency versus
Output Power
G
ps
, POWER GAIN (dB)
IMD, INTERMODULA
TION DIST
OR
TION (dBc)
, DRAIN EFFICIENCY
(%)
h
-38
-36
-34
-32
-30
40
45
50
55
-12
-16
-14
, DRAIN
h
EFFICIENCY
(%)
IMD, INTERMODULA
TION
DIST
OR
TION (dBc)
IRL, INPUT
RETURN
LOSS (dB)
G
ps
h
IMD
IRL
G
ps
h
V
DD
= 28 Vdc
I
DQ
= 350 mA
f1 = 945 MHz
G
ps
, POWER GAIN (dB)
V
DD
= 28 Vdc
P
out
= 45 W (PEP)
I
DQ
= 350 mA
Two-Tone Measurement,
100 kHz Tone Spacing
IMD, INTERMODULA
TION DIST
OR
TION (dBc)
1
10
100
400 mA
I
DQ
= 525 mA
V
DD
= 28 Vdc
f1 = 945 MHz
350 mA
300 mA
16.5
17.0
17.5
18.0
18.5
19.0
19.5
20.0
0.5
-70
-60
-50
-40
-30
-20
-10
0.5
1
10
100
400 mA
I
DQ
= 300 mA
525 mA
350 mA
V
DD
= 28 Vdc
I
DQ
= 350 mA
f1 = 945 MHz
f2 = 945.1 MHz
3rd Order
5th Order
7th Order
-90
-80
-60
-50
-40
-30
-10
0.5
1
10
100
-70
-20
V
DD
= 28 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
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