1
MRFIC0913
MOTOROLA RF DEVICE DATA
The MRFIC Line
900 MHz GaAs Integrated
Power Amplifier
This integrated circuit is intended for GSM class IV handsets. The device is
specified for 2.8 watts output power and 48% minimum power added efficiency
under GSM signal conditions at 4.8 Volt supply voltage. To achieve this superior
performance, Motorola's planar GaAs MESFET process is employed. The
device is packaged in the PFP16 Power Flat Package which gives excellent
thermal performance through a solderable backside contact.
Usable Frequency Range 800 to 1000 MHz
Typical Output Power:
36.0 dBm @ 5.8 Volts
35.0 dBm @ 4.8 Volts
31.5 dBm @ 3.6 Volts
48% Minimum Power Added Efficiency
Low Parasitic, High Thermal Dissipation Package
Order MRFIC0913R2 for Tape and Reel Option.
R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
Device Marking = M0913
ABSOLUTE MAXIMUM RATINGS
(TA = 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Supply Voltage
VD1, VD2
9
Vdc
RF Input Power
Pin
15
dBm
Gate Voltage
VSS
6
Vdc
Ambient Operating Temperature
TA
40 to + 85
C
Storage Temperature
Tstg
65 to +150
C
Thermal Resistance, Junction to Case
R
JC
10
C/W
Pin Connections and Functional Block Diagram
RF IN
1
2
3
4
7
6
5
GND
8
9
10
11
12
13
14
15
16
VG1
RF OUT
RF OUT
VD1
VD2
GND
GND
N/C
N/C
VSS
VG2
GND
GND
GND
Order this document
by MRFIC0913/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1996
MRFIC0913
900 MHz
GSM CELLULAR
INTEGRATED POWER AMPLIFIER
GaAs MONOLITHIC
INTEGRATED CIRCUIT
CASE 97802
(PFP16)
REV 1
MRFIC0913
2
MOTOROLA RF DEVICE DATA
RECOMMENDED OPERATING RANGES
Parameter
Symbol
Value
Unit
Supply Voltage
VD1, VD2
2.7 to 7.5
Vdc
Gate Voltage
VSS
5 to 3
Vdc
RF Frequency Range
fRF
800 to 1000
MHz
RF Input Power
PRF
6 to 13
dBm
ELECTRICAL CHARACTERISTICS
(VD1, VD2 = 4.8 V, VSS = 4 V, Pin = 10 dBm, Peak Measurement at 12.5% Duty Cycle, 4.6 ms
Period, TA = 25
C unless otherwise noted. Measured in Reference Circuit Shown in Figure 1.)
Characteristic
Min
Typ
Max
Unit
Frequency Range
880
--
915
MHz
Output Power
34.5
35
--
dBm
Power Added Efficiency
48
--
--
%
Input VSWR
--
2:1
--
VSWR
Harmonic Output
2nd
3rd
--
--
--
--
30
35
dBc
Output Power at Low voltage (VD1, VD2 = 4.0 V)
33.3
33.5
--
dBm
Output Power, Isolation (VD1, VD2 = 0 V)
--
20
15
dBm
Noise Power in 100 kHz, 925 to 960 MHz
--
--
90
dBm
Stability Spurious Output (Pin = 10 to 13 dBm, Pout = 5 to 35 dBm, Load
VSWR = 6:1 at any Phase Angle, Source VSWR = 3:1, at any Phase Angle,
VD1, VD2 adjusted for Specified Pout)
--
--
60
dBc
Load Mismatch stress (Pin = 10 to 13 dBm, Pout = 5 to 35 dBm, Load VSWR = 10:1
at any Phase Angle, VD1, VD2 Adjusted for Specified Pout)
No Degradation in Output Power after Returning to
Standard Conditions
3 dB VDD Bandwidth (VD1, VD2 = 0 to 6 V)
1
--
--
MHz
Negative Supply Current
--
--
1.25
mA
Figure 1. 900 MHz Reference Circuit
C2
T1
C3
RF OUT
C5
C6
R1
C8
L1
R3
R4
C9 C10
RF IN
C1, C3, C10 47 pF, ATC
C2, C9
47 nF, Vitramon
C5
10 pF, ATC
C6
22 nF, Vitramon
C8
6.8 pF, ATC
L1
8.2 nH, 0805 Toko
L2
10 Turn MicroSpring,
Coilcraft 160610
R1
330
R3
1.8 k
R4
2.7 k
T1
5 mm 30
Microstrip Line
BOARD MATERIAL Glass/Epoxy,
r = 4.45
L2
C1
VD1
VD2
VSS
1
2
3
4
7
6
5
8
9
10
11
12
13
14
15
16
3
MRFIC0913
MOTOROLA RF DEVICE DATA
C2
T1
C3
RF
OUT
C5
C6
R1
C8
L1
R3
R4
C9 C10
RF IN
L2
C1
1
2
3
4
7
6
5
8
9
10
11
12
13
14
15
16
Figure 2. GSM Application Circuit Configuration with Drain Switch
and MC33169 GaAs Power Amplifier Support IC
1
2
3
4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
5
6
7
8
D
G
S
D
D
D
S
VRAMP
4.8 V BATTERY
Q1
R5
R2
C15
C14
U1
CR1
C12
C13
STANDBY
C1
33 pF, 0603 NPO/COG
C2, C9
33 nF
C3
47 pF, 0603 NPO/COG
C4, C5, C8 6.8 pF, 0603 NPO/COG
C6
33 nF
C7
220 nF
C10
33 pF, 0603 NPO/COG
C12 C16 1
F
CR1
MMBD701LT1
L1
8.2 nH, 0805 Toko
L2
10 Turn MicroSpring,
Coilcraft 160610 (for
improved harmonic rejection
only)
Q1
MMSF4N01HD
R1
330
R2
100
R3
1.8 k
R4
2.7 k
R5
470
T1
5 mm 30
Microstrip Line
U1
MRFIC0913
U2
MC33169 (4 V Version)
BOARD MATERIAL Glass/Epoxy,
r = 4.45
C16
U2
0 V
3 V
0 V
3 V
C7
C4
Note: Use of a Schottky diode such as MMBD701LT1 for CR1 is mandatory below 3.6 V.
A general purpose silicon diode can be used above 3.6 V.
MRFIC0913
4
MOTOROLA RF DEVICE DATA
P
AE, POWER
ADDED
EFFICIENCY
(%)
f, FREQUENCY (MHz)
56
53
52
50
880
915
55
54
51
Pin = 10 dBm
TA = 25
C
VSS = 4 V
895
900
905
890
910
885
P
out
,
OUTPUT
POWER (dBm)
RL, RETURN LOSS (dB)
f, FREQUENCY (MHz)
P
AE, POWER
ADDED
EFFICIENCY
(%)
f, FREQUENCY (MHz)
58
52
50
46
880
915
34.0
880
895
900
905
915
f, FREQUENCY (MHz)
TYPICAL CHARACTERISTICS
Figure 3. Output Power versus Frequency
Figure 4. Power Added Efficiency
versus Frequency
33.8
33.6
33.4
33.2
33.0
25
C
Pin = 10 dBm
VD1 = VD2 = 4 V
VSS = 4 V
35.6
35.0
34.6
34.4
880
915
Figure 5. Output Power versus Frequency
Figure 6. Power Added Efficiency
versus Frequency
36.8
880
915
f, FREQUENCY (MHz)
P
out
,
OUTPUT
POWER (dBm)
Figure 7. Output Power versus Frequency
36.4
36.0
35.2
40
880
915
f, FREQNENCY (MHz)
Figure 8. Input Return Loss versus Frequency
30
20
15
TA = 40
C
890
910
56
54
48
35.4
34.8
36.6
36.2
35.6
35
25
85
C
P
out
,
OUTPUT
POWER (dBm)
885
25
C
Pin = 10 dBm
VD1 = VD2 = 4.8 V
VSS = 4 V
TA = 40
C
85
C
895
900
905
890
910
885
25
C
Pin = 10 dBm
VD1 = VD2 = 4.8 V
VSS = 4 V
TA = 40
C
85
C
35.2
895
900
905
890
910
885
VD1 = VD2 = 5.6 V
4.8 V
895
900
905
890
910
885
25
C
Pin = 10 dBm
VD1 = VD2 = 5.6 V
VSS = 4 V
TA = 40
C
85
C
35.8
35.4
895
900
905
890
910
885
25
C
85
C
4 V
4 V
Pin = 10 dBm
VD1 = VD2 = 4.8 V
VSS = 4 V
TA = 40
C
5
MRFIC0913
MOTOROLA RF DEVICE DATA
1
1
P
AE, POWER
ADDED
EFFICIENCY
(%)
Pin, INPUT POWER (dBm)
VD1, VD2, DRAIN VOLTAGE (VOLTS)
P
AE, POWER
ADDED
EFFICIENCY
(%)
60
50
20
0
0
6
40
0
2
3
4
6
VD1, VD2, DRAIN VOLTAGE (VOLTS)
TYPICAL CHARACTERISTICS
Figure 9. Output Power versus Drain Voltage
Figure 10. Power Added Efficiency versus
Drain Voltage
30
10
0
10
30
36
32
24
20
7
3
9
13
Figure 11. Output Power versus Input Power
60
30
0
7
13
Pin, INPUT POWER (WATTS)
Figure 12. Power Added Efficiency versus
Input Power
20
1
5
30
40
10
28
50
10
20
40
P
out
,
OUTPUT
POWER (dBm)
f = 900 MHz
Pin = 10 dBm
VSS = 4 V
TA = 85
and 25
C
40
C
20
2
3
4
1
5
f = 900 MHz
Pin = 10 dBm
VSS = 4 V
25
C
TA = 40
C
P
out
,
OUTPUT
POWER (dBm)
25
C
TA = 40
C
30
22
34
26
5
5
7
11
3
TA = 40
C
85
C
3
9
5
5
1
7
11
3
85
C
85
C
1
25
C
f = 900 MHz
VD1 = VD2 = 4.8 V
VSS = 4 V
f = 900 MHz
VD1 = VD2 = 4.8 V
VSS = 4 V
f
Zin
Ohms
ZOL*
Ohms
(MHz)
R
jX
R
jX
880
13.65
44.05
3.15
5.06
885
13.64
44.74
3.13
4.97
890
13.65
45.44
3.10
4.89
895
13.64
46.14
3.08
4.80
900
13.64
46.84
3.06
4.71
905
13.65
47.55
3.04
4.63
910
13.66
48.27
3.02
4.54
915
13.66
49.00
3.00
4.45
Table 1. Device Impedances Derived from Circuit Characterization
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