1
Motorola Bipolar Power Transistor Device Data
Plastic Medium-Power
Complementary Silicon Transistors
. . . designed for generalpurpose amplifier and lowspeed switching applications.
High DC Current Gain --
hFE = 2500 (Typ) @ IC = 4.0 Adc
CollectorEmitter Sustaining Voltage -- @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) -- TIP120, TIP125
VCEO(sus)
= 80 Vdc (Min) -- TIP121, TIP126
VCEO(sus)
= 100 Vdc (Min) -- TIP122, TIP127
Low CollectorEmitter Saturation Voltage --
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat)
= 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
TO220AB Compact Package
*MAXIMUM RATINGS
Rating
Symbol
TIP120,
TIP125
TIP121,
TIP126
TIP122,
TIP127
Unit
CollectorEmitter Voltage
VCEO
60
80
100
Vdc
CollectorBase Voltage
VCB
60
80
100
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current -- Continuous
Peak
IC
5.0
8.0
Adc
Base Current
IB
120
mAdc
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
65
0.52
Watts
W/
_
C
Total Power Dissipation @ TA = 25
_
C
Derate above 25
_
C
PD
2.0
0.016
Watts
W/
_
C
Unclamped Inductive Load Energy (1)
E
50
mJ
Operating and Storage Junction,
Temperature Range
TJ, Tstg
65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.92
_
C/W
Thermal Resistance, Junction to Ambient
R
JA
62.5
_
C/W
(1) IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100
.
80
0
0
20
40
60
80
100
120
160
Figure 1. Power Derating
T, TEMPERATURE (
C)
P
D
, POWER DISSIP
A
TION (W
A
TTS)
40
20
60
140
TC
4.0
0
2.0
1.0
3.0
TA
TA
TC
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TIP120/D
Motorola, Inc. 1995
TIP120
TIP121
TIP122
TIP125
TIP126
TIP127
DARLINGTON
5 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 80 100 VOLTS
65 WATTS
*Motorola Preferred Device
*
NPN
PNP
*
*
*
CASE 221A06
TO220AB
*
*
REV 2
TIP120 TIP121 TIP122 TIP125 TIP126 TIP127
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
(IC = 100 mAdc, IB = 0)
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
VCEO(sus)
60
80
100
--
--
--
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
TIP120, TIP125
(VCE = 40 Vdc, IB = 0)
TIP121, TIP126
(VCE = 50 Vdc, IB = 0)
TIP122, TIP127
ICEO
--
--
--
0.5
0.5
0.5
mAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
TIP120, TIP125
(VCB = 80 Vdc, IE = 0)
TIP121, TIP126
(VCB = 100 Vdc, IE = 0)
TIP122, TIP127
ICBO
--
--
--
0.2
0.2
0.2
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
--
2.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 0.5 Adc, VCE = 3.0 Vdc)
(IC = 3.0 Adc, VCE = 3.0 Vdc)
hFE
1000
1000
--
--
--
CollectorEmitter Saturation Voltage
(IC = 3.0 Adc, IB = 12 mAdc)
(IC = 5.0 Adc, IB = 20 mAdc)
VCE(sat)
--
--
2.0
4.0
Vdc
BaseEmitter On Voltage
(IC = 3.0 Adc, VCE = 3.0 Vdc)
VBE(on)
--
2.5
Vdc
DYNAMIC CHARACTERISTICS
SmallSignal Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
hfe
4.0
--
--
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz
TIP125, TIP126, TIP127
TIP120, TIP121, TIP122
Cob
--
--
300
200
pF
(1) Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2%.
Figure 2. Switching Times Test Circuit
5.0
0.1
Figure 3. Switching Times
IC, COLLECTOR CURRENT (AMP)
t,
TIME (
s)
2.0
1.0
0.5
0.05
0.2
0.3
0.5 0.7 1.0
2.0
3.0
10
0.3
0.7
PNP
NPN
tf
tr
ts
td @ VBE(off) = 0
V2
approx
+ 8.0 V
V1
approx
12 V
tr, tf
10 ns
DUTY CYCLE = 1.0%
25
s
0
RB
51
D1
+ 4.0 V
VCC
30 V
RC
TUT
8.0 k
120
SCOPE
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse all polarities.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB
100 mA
MSD6100 USED BELOW IB
100 mA
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25
C
3.0
0.2
0.1
0.07
5.0 7.0
TIP120 TIP121 TIP122 TIP125 TIP126 TIP127
3
Motorola Bipolar Power Transistor Device Data
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t)
,
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1.0 k
500
Z
JC(t) = r(t) R
JC
R
JC = 1.92
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) Z
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02
20
1.0
Figure 5. ActiveRegion Safe Operating Area
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
10
5.0
2.0
1.0
0.02
2.0
5.0
20
50
100
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25
C (SINGLE PULSE)
0.5
I C
, COLLECT
OR CURRENT
(AMP)
TJ = 150
C
dc
1 ms
100
s
0.2
0.1
10
0.05
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
5 ms
3.0
7.0
30
70
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
500
s
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150
_
C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150
_
C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown
300
0.1
VR, REVERSE VOLTAGE (VOLTS)
30
2.0
5.0
10
20
100
50
0.2
0.5
1.0
C, CAP
ACIT
ANCE (pF)
100
50
TJ = 25
C
Cib
70
Cob
PNP
NPN
Figure 6. SmallSignal Current Gain
10,000
1.0
f, FREQUENCY (kHz)
10
20
50
100
200
1000
2.0
5.0
10
3000
500
100
TC = 25
C
VCE = 4.0 Vdc
IC = 3.0 Adc
1000
PNP
NPN
Figure 7. Capacitance
50
500
h
fe
, SMALLSIGNAL
CURRENT
GAIN
5000
2000
300
200
30
20
200
TIP120 TIP121 TIP122 TIP125 TIP126 TIP127
4
Motorola Bipolar Power Transistor Device Data
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
20,000
0.1
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
200
0.2
0.3
0.5
1.0
2.0
10
500
1000
300
h
FE
, DC CURRENT
GAIN
2000
3000
VCE = 4.0 V
0.7
3.0
NPN
TIP120, TIP121, TIP122
PNP
TIP125, TIP126, TIP127
Figure 9. Collector Saturation Region
3.0
0.3
IB, BASE CURRENT (mA)
1.0
0.5
1.0
2.0
10
30
1.8
IC = 2.0 A
TJ = 25
C
4.0 A
2.2
2.6
0.7
5.0
3.0
0.1
IC, COLLECTOR CURRENT (AMP)
0.2 0.3
0.5
1.0
2.0
5.0
10
2.5
2.0
1.5
1.0
0.5
TJ = 25
C
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
V
, VOL
T
AGE (VOL
TS)
Figure 10. "On" Voltages
VBE @ VCE = 4.0 V
3.0
10,000
5000
TJ = 150
C
25
C
55
C
20
IC, COLLECTOR CURRENT (AMP)
h
FE
, DC CURRENT
GAIN
VCE = 4.0 V
TJ = 150
C
25
C
55
C
1.4
6.0 A
IB, BASE CURRENT (mA)
TJ = 25
C
IC, COLLECTOR CURRENT (AMP)
V
, VOL
T
AGE (VOL
TS)
TJ = 25
C
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
VBE @ VCE = 4.0 V
5.0 7.0
20,000
0.1
200
0.2
0.3
0.5
1.0
2.0
10
500
1000
300
2000
3000
0.7
3.0
10,000
5000
5.0 7.0
7000
700
3.0
7.0
3.0
0.3
1.0
0.5
1.0
2.0
10
30
1.8
2.2
2.6
0.7
5.0
20
1.4
3.0
7.0
IC = 2.0 A
4.0 A
6.0 A
0.7
7.0
3.0
0.1
0.2 0.3
0.5
1.0
2.0
5.0
10
2.5
2.0
1.5
1.0
0.5
3.0
0.7
7.0
TIP120 TIP121 TIP122 TIP125 TIP126 TIP127
5
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 221A06
TO220AB
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
1.15
Z
0.080
2.04
B
Q
H
Z
L
V
G
N
A
K
F
1
2 3
4
D
SEATING
PLANE
T
C
S
T
U
R
J
TIP120 TIP121 TIP122 TIP125 TIP126 TIP127
6
Motorola Bipolar Power Transistor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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