1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
TMOS FET Transistor
NChannel -- Enhancement
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain Source Voltage
VDSS
240
Vdc
Drain Gate Voltage
VDGR
60
Vdc
Gate Source Voltage
Continuous
Nonrepetitive (tp
50
s)
VGS
VGSM
20
40
Vdc
Vpk
Continuous Drain Current
ID
200
mAdc
Pulsed Drain Current
IDM
500
mAdc
Power Dissipation @ TC = 25
C
Derate above 25
C
PD
350
2.8
mW
mW/
C
Operating and Storage Temperature
TJ, Tstg
--
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
JA
312.5
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/16
from case for 10
seconds
TL
300
C
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
STATIC CHARACTERISTICS
Drain Source Breakdown Voltage
(VGS = 0, ID = 100
A)
V(BR)DSS
240
--
Vdc
Zero Gate Voltage Drain Current
(VDS = 120 Vdc, VGS = 0)
(VDS = 120 Vdc, VGS = 0, TA = 125
C)
IDSS
--
--
10
500
Adc
Gate Body Leakage
(VDS = 0, VGS =
15 V)
IGSS
--
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mA)
VGS(th)
0.8
2.0
Vdc
OnState Drain Current(1)
(VGS = 10 V, VDS
2.0 VDS(on))
ID(on)
1.0
--
Adc
DrainSource On Resistance(1)
(VGS = 2.5 V, ID = 0.1 A)
(VGS = 10 V, ID = 0.5 A)
rDS(on)
--
--
10
10
Forward Transconductance(1)
(VDS = 10 V, ID = 0.5 A)
gfs
300
--
mS
1. Pulse Test; Pulse Width < 300
s, Duty Cycle
v
2.0%.
TMOS is a registered trademark of Motorola, Inc.
Order this document
by VN2410L/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
VN2410L
CASE 2904, STYLE 22
TO92 (TO226AA)
1
2
3
Motorola, Inc. 1997
3 DRAIN
1 SOURCE
2
GATE
REV 1
VN2410L
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS 25 Vdc VGS 0
Ciss
--
125
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0,
f = 1.0 MHz)
Coss
--
50
pF
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
--
20
pF
SWITCHING CHARACTERISTICS
TurnOn Time
(VDD 60 Vdc ID 0 4 A
t(on)
--
8.0
ns
(VDD = 60 Vdc, ID = 0.4 A,
RL = 150
, RG = 25
)
t(r)
--
8.0
ns
TurnOff Time
RL = 150
, RG = 25
)
t(off)
--
23
ns
t(f)
--
34
ns
VN2410L
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
CASE 02904
(TO226AA)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.022
0.41
0.55
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
12.70
L
0.250
6.35
N
0.080
0.105
2.04
2.66
P
0.100
2.54
R
0.115
2.93
V
0.135
3.43
1
ISSUE AD
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
VN2410L
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
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