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Электронный компонент: MP4T243

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Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 1
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Silicon Bipolar High f
T
Low Noise
Medium Power 12 Volt Transistors
MP4T243 Series
V3.00
Features
Low Phase Noise Oscillator Transistor
200 mW Driver Amplifier Transistor
Operation to 8 GHz
Available as Chip
Available in Hermetic Surface Mount Packages
Description
The MP4T24300 series of high f
T
NPN medium power
bipolar transistors are designed for usage in oscillators
to 8 GHz and for moderate power driver amplifiers
through 3 GHz with noise figure below 4 dB.
This industry standard transistor is available as a chip
for hybrid oscillator circuits or in hermetic ceramic
packages for military usage. The chip and hermetic
packages may be screened to JANTXV equivalent
levels.
The MP4T243 transistors utilize sub-micron photolithog-
raphy and locos oxidation techniques to minimize para-
sitic capacitances. It also reduces shot noise enabling
improved low noise characteristics. These transistors
use a high temperature refractory barrier/gold
metalization process. The MP4T243 transistor is emitter
ballasted using ion implanted polysilicon resistors to
prevent emitter current hot spots at high current
operation.
Case Styles
Chip
Micro-X
Silicon Bipolar High f
T
Low Noise Medium Power 12 Volt Transistors MP4T243 Series
V3.00
pecification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 2
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Absolute Maximum Ratings @ 25
C
Parameter
Symbol
Unit
MP4T24300
Chip
MP4T24335
Micro-X
Collector-Base Voltage
1
V
CBO
Volts
25
25
Collector-Emitter Voltage
1
V
CEO
Volts
12
12
Emitter-Base Voltage
1
V
EBO
Volts
1.5
1.5
Collector Current
1
I
C
mA
110
110
Junction Temperature
T
j
C
200
200
Storage Temperature
T
STG
C
-65 to +200
-65 to +200
Power Dissipation
1,3
P
T
mW
1000
400
Operating Temperature
2
T
CP
C
150
150
1. At 25
C case temperature (packaged transistors) or 25
C mounting surface temperature (chip transistors).
2. Case or bonding surface temperature. Derate maximum power dissipation rating to zero watts at maximum operating temperature.
3. The thermal resistance of the MP4T24300 junction/case is 50
C/watt nominal.
Electrical Specifications @ 25
C
Parameter
Condition
Symbol
Units
MP4T24300
Chip
MP4T24335
Micro-X
Gain Bandwidth Product
V
CE
= 12 volts
f
T
GHz
7 typ
7 typ
I
C
= 40 mA
Insertion Power Gain
V
CE
= 12 volts
|S
21E
|
2
dB
I
C
= 40 mA
f = 1 GHz
12 min
11 min
f = 2 GHz
8 typ
8 typ
Noise Figure
V
CE
= 12 volts
NF
dB
I
C
= 20 mA
f = 1 GHz
3 typ
3 typ
Unilateral Gain
V
CE
= 12 volts
GTU (max)
aB
I
C
= 40 mA
f = 2 GHz
11 typ
10.5 typ
Maximum Available Gain
V
CE
= 12 volts
MAG
dB
I
C
= 40 mA
f = 2 GHz
15 typ
15 typ
Power Out at 1 dB Compression
V
CE
= 12 volts
P
1dB
dBm
I
C
= 40 mA
f = 1 GHz
24 typ
24 typ
f = 2 GHz
22 typ
22 typ
Moderate Power High fT NPN Silicon Transistor MP4T243 Series
V2.00
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 3
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Electrical Specifications @ 25
C
Parameter
Condition
Symbol
Min
Typical
Max
Units
Collector Cut-off Current
V
CB
= 15 volts
I
CBO
10
A
I
E
= 0
A
Emitter Cut-off Current
V
EB
= 1 volt
I
EBO
1
A
I
C
= 0
A
Forward Current Gain
V
CE
= 8 volts
h
FE
20
90
250
I
C
= 50 mA
Collector Base
V
CB
= 10 volts
C
CB
0.60
0.08
pF
Junction Capacitance
I
E
= 0
A
f = 1 MHz
Typical Scattering Parameters in the MIcro-X Package
MP4T24335
V
CE
= 12 Volts, I
C
= 10 mA
Frequency
S11E
S21E
S12E
S22E
(MHz)
Mag.
Angle
Mag.
Angle
Mag.
Angle
Mag
Angle
1000
0.598
-157
3.610
84.4
0.114
27.6
0.378
-73.4
2000
0.612
177
2.373
64.6
0.127
27.3
0.286
-90.7
3000
0.549
153
1.658
44.2
0.146
29.4
0.253
-113.2
4000
0.709
133
1.355
26.1
0.173
30.9
0.269
-138.5
5000
0.794
115
1.182
9.1
0.207
30.2
0.314
-162.2
6000
0.899
96
1.063
-7.4
0.246
27.1
0.367
170.8
7000
1.013
75
0.973
-24.0
0.296
21.5
0.439
157.0
8000
1.108
53
0.878
-41.0
0.360
13.4
0.559
135.6
9000
1.161
30
0.773
-58.8
0.438
2.5
0.757
116.4
10000
1.161
13
0.677
-73.2
0.500
9.2
0.949
103.4
11000
1.161
13
0.677
-73.2
0.500
9.4
0.949
103.6
V
CE
= 12 Volts, I
C
= 20 mA
Frequency
S11E
S21E
S12E
S22E
(MHz)
Mag.
Angle
Mag.
Angle
Mag.
Angle
Mag
Angle
1000
0.574
-153
4.510
90.3
0.103
32.1
0.330
-78.0
2000
0.591
170
2.433
64.3
0.126
30.1
0.239
-100.4
3000
0.635
147
1.777
45.3
0.150
32.9
0.205
-126.2
4000
0.696
128
1.465
27.5
0.181
32.1
0.217
-151.3
5000
0.788
110
1.298
11.1
0.215
29.4
0.262
-169.0
6000
0.890
51
1.180
-5.3
0.246
25.8
0.301
-167.7
7000
1.018
72
1.090
-23.1
0.285
19.6
0.366
156.2
8000
1.106
50
1.000
-40.9
0.347
12.1
0.457
134.3
9000
1.165
27
0.875
-60.0
0.399
6.3
0.625
115.1
10000
1.147
6
0.723
-79.5
0.485
13.5
0.847
101.7
11000
1.147
6
0.723
-79.5
0.485
13.5
0.847
101.7
Silicon Bipolar High f
T
Low Noise Medium Power 12 Volt Transistors MP4T243 Series
V3.00
pecification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 4
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Typical Scattering Parameters in the MIcro-X Package
MP4T24335 ( Continued )
V
CE
= 12 Volts, I
C
= 40 mA
Frequency
S11E
S21E
S12E
S22E
(MHz)
Mag.
Angle
Mag.
Angle
Mag.
Angle
Mag
Angle
1000
0.571
-164
4.410
88.2
0.092
35.3
0.282
-83.2
2000
0.603
166
2.533
65.6
0.118
35.2
0.196
-105.6
3000
0.650
141
1.875
44.5
0.146
35.2
0.176
-127.1
4000
0.701
123
1.485
27.0
0.178
33.4
0.183
-147.4
5000
0.788
104
1.305
10.2
0.210
31.2
0.216
-169.0
6000
0.879
86
1.163
-6.0
0.247
26.3
0.255
171.8
7000
0.982
66
1.065
-23.1
0.290
21.4
0.317
153.6
8000
1.057
46
0.932
-40.8
0.333
14.6
0.391
135.8
9000
1.101
25
0.815
-57.8
0.389
5.8
0.502
116.6
10000
1.097
5
0.675
-76.6
0.450
-8.5
0.656
96.7
V
CE
= 12 Volts, I
C
= 60 mA
Frequency
S11E
S21E
S12E
S22E
(MHz)
Mag.
Angle
Mag.
Angle
Mag.
Angle
Mag
Angle
1000
0.577
-168
4.055
86.4
0.084
35.1
0.268
-72.9
2000
0.608
165
2.330
64.7
0.111
37.7
0.200
-88.8
3000
0.652
140
1.728
44.4
0.140
38.0
0.185
-108.3
4000
0.701
123
1.382
27.1
0.171
36.5
0.192
-127.9
5000
0.786
105
1.215
10.6
0.204
34.6
0.218
-147.4
6000
0.874
86
1.085
-5.6
0.242
29.8
0.254
-160.4
7000
0.972
67
0.990
-22.0
0.288
5.0
0.320
-161.7
8000
1.045
46
0.873
-39.4
0.334
18.1
0.396
-145.7
9000
1.086
25
0.760
-55.6
0.394
9.7
0.508
125.8
10000
1.084
7
0.638
-73.3
0.462
-4.7
0.668
105.7
Moderate Power High fT NPN Silicon Transistor MP4T243 Series
V2.00
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 5
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Typical Performance Curves
DC SAFE OPERATING RANGE AT 25
C
20
40
60
80
100
120
140
160
180
200
0
2
4
6
8
10
12
14
COLLECTOR EMITTER
VOLTAGE (Volts)
COLLECTOR CURRENT (mA)
MP4T24300
Chip on 25C
Heat Sink
MP4T24335
Micro-X
NOMINAL COLLECTOR-BASE CAPACITANCE vs
COLLECTOR-BASE VOLTAGE (MP4T24335)
0.4
0.5
0.6
0.7
0.8
0.9
1
1
10
100
COLLECTOR-BASE VOLTAGE
(Volts)
COLLECTOR-BASE
CAPACITANCE (pF)
POWER DERATING CURVES
0
100
200
300
400
500
600
700
800
900
1000
-25
0
25
50
75
100
125
150
175
200
AMBIENT TEMP (C)
TOTAL POWER
DISSIPATION (mW)
MP4T24300
Chip on 25C
Heat Sink
MP4T24335
Micro-X
NOMINAL GAIN vs FREQUENCY at V
CE
= 12 Volts
and I
C
= 20 mA (MA4T24335)
0
2
4
6
8
10
12
14
16
1
10
FREQUENCY (GHz)
GAIN (dB)
GTU (MAX)
|S
21
|2