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Электронный компонент: MP4T324335

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Specification Subject to Change Without Notice
M-Pulse
Microwave____________________________________________________________________________________ 1
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Bipolar High fT Low Voltage
NPN Silicon Transistors
MP4T3243 Series
V4.00
Features
Designed for 3-5 Volt Operation
Useable to 6 GHz in Oscillators
Useable for Low Noise, Low Voltage Driver Amplifiers
Through 3 GHz
Useful for Class C Amplifiers
Available as Chips and in Hermetic and Surface
Mount Packages
Can be Screened to JANTX, JANTXV Equivalent Levels
(ceramic pacakges)
Tape and Reel Packaging Available for packaged
devices.
Description
The MP4T3243 series of high f
T
low voltage NPN medium
power silicon bipolar transistors is designed for usage in
battery operated systems with 3-5 volt collector bias. They
are useful as low phase noise oscillator transistors through 6
GHz and as moderate power driver amplifiers through 3
GHz.
These transistors are available as chips for hybrid oscillators
or in ceramic packages for military or commercial usage.
Both the chips and hermetic packages can be screened to
JANTX equivalent levels.
These transistors use high temperature gold, platinum,
titanium metalization with silicon dioxide and silicon nitride
passivation. The chip is emitter ballasted with polysilicon
resistors to prevent current concentration at high current
operation.
Case Style
SOT-23
Chip
Micro-X
Bipolar High fT Low Voltage NPN Silicon Transistors
V4.00
Specification Subject to Change Without Notice
M-Pulse
Microwave____________________________________________________________________________________ 2
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T3243 Series
Maximum Ratings
Parameter
Symbol
Unit
MP4T324300
Chip
MP4T324333
SOT-23
MP4T324335
Micro-X
Collector-Base Voltage
1
V
CBO
Volts
8
8
8
Collector-Emitter Voltage
1
V
CE
Volts
6
6
6
Emitter-Base Voltage
1
V
EB
Volts
1.5
1.5
1.5
Collector Current
1
I
C
mA
110
110
110
Junction Temperature
T
j
C
200
125
200
Storage Temperature
T
STG
C
-65 to +175
C
-65 to +125
C
-65 to +175
C
Power Dissipation
1,3
P
T
mW
600
250
400
Operating Temperature
2
T
CP
C
150
125
150
1.
At 25
C case temperature (packaged transistors) or 25
C mounting surface temperature (chip transistors).
2.
Case or bonding surface temperature. Derate maximum power dissipation rating linearly to zero watts at maximum operating temperature.
3.
The thermal resistance of the MP4T324300 junction/case is 50
C/watt nominal.
Electrical Specifications @ +25
C
Parameter
Condition
Symbol
Units
MP4T324300
Chip
MP4T324333
SOT-23
MP4T324335
Micro-X
Gain Bandwidth Product
V
CE
= 3 volts
f
T
GHz
6 typ
6 typ
6 typ
I
C
= 50 mA
Insertion Power Gain
V
CE
= 3 volts
|S
21E
|
2
dB
I
C
= 40 mA
f = 1 GHz
7 min
6 min
7 min
f = 2 GHz
3 typ
2.5 typ
3 typ
Noise Figure
V
CE
= 3 volts
NF
dB
I
C
= 10 mA
f = 1 GHz
2.2 max
2.4 max
2.2 max
Unilateral Gain
V
CE
= 3 volts
GTU (max)
dB
I
C
= 40 mA
f = 1 GHz
10 typ
9 typ
10 typ
f = 2 GHz
6 typ
4 typ
6 typ
Maximum Available Gain
V
CE
= 3 volts
MAG
dB
I
C
= 40 mA
f = 2 GHz
8.5 typ
7 typ
8.5 typ
Power Out at 1 dB
V
CE
= 3 volts
P
1dB
dBm
Compression
I
C
= 50 mA
f = 2 GHz
20 typ
19 typ
20 typ
f = 3 GHz
15 typ
15 typ
15 typ
Bipolar High fT Low Voltage NPN Silicon Transistors
V4.00
Specification Subject to Change Without Notice
M-Pulse
Microwave____________________________________________________________________________________ 3
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T3243 Series
Electrical Specifications @ +25
C
MP4T3243 Series
Parameter
Condition
Symbol
Min
Typical
Max
Units
Collector Cut-off Current
V
CB
= 4 volts
I
CBO
10
A
I
E
= 0
A
Emitter Cut-off Current
V
EB
= 1 volt
I
EBO
1
A
I
C
= 0
A
Forward Current Gain
V
CE
= 3 volts
h
FE
20
125
250
I
C
= 20 mA
Collector Base
V
CB
= 3 volts
C
OB
0.8
1.0
pF
Junction Capacitance
I
E
= 0
A
f = 1 MHz
Typical Scattering Parameters in the MIcro-X Package
MP4T324335
V
CE
= 3 Volts, I
C
= 10 mA
Frequency
S11E
S21E
S12E
S22E
(MHz)
Mag.
Angle
Mag.
Angle
Mag.
Angle
Mag
Angle
1000
0.647
172
2.480
73.2
0.137
51.4
0.311
-165.8
2000
0.666
149
1.408
51.2
0.225
49.0
0.365
172.5
3000
0.694
128
1.135
34.1
0.336
43.8
0.366
156.0
4000
0.714
109
1.005
17.3
0.427
32.1
0.412
142.1
5000
0.748
90
0.948
4.0
0.507
22.8
0.453
127.2
6000
0.772
70
0.930
-9.1
0.605
11.8
0.499
111.9
MP4T324335
V
CE
= 3 Volts, I
C
= 20 mA
Frequency
S11E
S21E
S12E
S22E
(MHz)
Mag.
Angle
Mag.
Angle
Mag.
Angle
Mag
Angle
1000
0.661
168
2.632
73.3
0.137
60.8
0.373
178.5
2000
0.677
146
1.493
53.1
0.238
53.0
0.421
161.3
3000
0.697
125
1.210
36.5
0.359
44.8
0.415
144.6
4000
0.715
107
1.067
19.3
0.451
31.0
0.450
130.3
5000
0.744
89
1.007
5.4
0.525
20.7
0.480
115.5
6000
0.762
69
0.990
-8.5
0.619
9.1
0.510
101.6
Bipolar High fT Low Voltage NPN Silicon Transistors
V4.00
Specification Subject to Change Without Notice
M-Pulse
Microwave____________________________________________________________________________________ 4
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T3243 Series
Typical Scattering Parameters in the Micro-X Package (Cont'd)
MP4T324335
V
CE
= 3 Volts, I
C
= 40 mA
Frequency
S11E
S21E
S12E
S22E
(MHz)
Mag.
Angle
Mag.
Angle
Mag.
Angle
Mag
Angle
1000
0.675
164
2.678
73.3
0.139
66.2
0.424
176.6
2000
0.692
143
1.528
54.1
0.244
55.0
0.470
158.6
3000
0.707
121
1.230
37.7
0.368
45.9
0.455
141.6
4000
0.719
104
1.095
20.8
0.463
31.5
0.481
128.1
5000
0.749
86
1.035
6.5
0.537
20.4
0.504
113.3
6000
0.763
66
1.017
-7.8
0.629
8.4
0.523
99.2
MP4T324335
V
CE
= 3 Volts, I
C
= 60 mA
Frequency
S11E
S21E
S12E
S22E
(MHz)
Mag.
Angle
Mag.
Angle
Mag.
Angle
Mag
Angle
1000
0.685
164
2.678
73.1
0.140
68.1
0.446
173.9
2000
0.698
143
1.528
54.2
0.251
56.1
0.492
156.8
3000
0.719
122
1.245
37.7
0.380
45.6
0.480
139.4
4000
0.727
104
1.103
20.7
0.474
31.0
0.502
125.4
5000
0.754
86
1.045
6.5
0.549
19.8
0.520
110.6
6000
0.767
67
1.025
-7.9
0.641
7.4
0.540
96.0
Typical Performance Curves
DC SAFE OPERATING RANGE at 25
c
10
200
0
2
4
6
COLLECTOR EMITTER VOLTAGE (Volts)
COLLECTOR CURRENT (mA)
110
100
50
20
80
NOMINAL POWER DERATING CURVES
0
100
200
300
400
500
600
700
800
900
1000
-25
0
25
50
75
100
125
150
175
200
AMBIENT TEMP (C)
TOTAL POWER DISSIPATION (mW)
MP4T324300 CHIP
ON 25
C HEAT SINK
MP4T324300 CHIP
ON 25
C HEAT SINK
MP4T324335 MICRO-X
MP4T324335 MICRO-X
MP4T324333 SOT-23
MP4T324333 SOT-23
Bipolar High fT Low Voltage NPN Silicon Transistors
V4.00
Specification Subject to Change Without Notice
M-Pulse
Microwave____________________________________________________________________________________ 5
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T3243 Series
Typical Performance Curves (Cont'd)
NOMINAL COLLECTOR-BASE
CAPACITANCE (C
OB
) vs COLLECTOR-
BASE VOLTAGE (MP4T324335)
0.4
0.5
0.6
0.7
0.8
0.9
1
1
10
COLLECTOR-BASE VOLTAGE (Volts)
COLLECTOR-BASE CAPACITANCE
(pF)
NOMINAL GAIN vs COLLECTOR CURRENT
at f=1 GHz and V
CE
= 3 VOLTS
(MP4T324335)
4
5
6
7
8
9
10
11
12
13
1
10
100
COLLECTOR CURRENT (mA)
GAIN (dB)
GTU (MAX)
|S
21E
|2
MAG
NOMINAL GAIN BANDWIDTH PRODUCT
(f
T
) vs COLLECTOR CURRENT at V
CE
= 3
and 5 VOLTS (MP4T324335)
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
1
10
100
COLLECTOR CURRENT (mA)
GAIN BANDWIDTH PRODUCT (GHz)
3 VOLTS
5 VOLTS
NOMINAL GAIN vs FREQUENCY at V
CE
= 3
VOLTS AND I
C
= 20 mA (MP4T324335)
0
2
4
6
8
10
12
1
10
FREQUENCY (GHz)
GAIN (dB)
GTU (MAX)
|S
21E
|2
NOMINAL GAIN vs COLLECTOR CURRENT
AT f=2 GHz and V
CE
= 3 VOLTS
(MP4T324335)
0
1
2
3
4
5
6
7
8
9
10
1
10
100
COLLECTOR CURRENT (mA)
GAIN (dB)
GTU (MAX)
|S
21E
|2
MAG
NOMINAL DC CURRENT GAIN (h
FE
) vs
COLLECTOR CURRENT at V
CE
= 3 VOLTS
(MP4T324335)
50
60
70
80
90
100
110
120
0
20
40
60
80
100
COLLECTOR CURRENT (mA)
DC CURRENT GAIN