Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 1
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Silicon Bipolar High f
T
Low Noise
Microwave Transistors
MP4T645
Features
f
T
to 9 GHz
Low Noise Figure
High Associated Gain
Hermetic and Surface Mount Packages Available
Can be Screened to JANTX, JANTXV Equivalent Levels
Industry Standard
Description
The MP4T645 family of high gain-bandwidth, small
signal silicon bipolar transistors is well suited for use in
amplifiers to approximately 4 GHz, and in oscillators to
approximately 10 GHz. These industry standard transis-
tors freature low noise figure at high collector current,
which produces very good associated gain and wide
dynamic range. The MP4T645 series transistors are
available in a hermetic microstrip package
(MP4T64535), in the plastic SOT-23 package
(MP4T64533), in chip form (MP4T64500), and in the
SOT-143 package (MP4T64539). The MP4T645 series
is available in other plastic and hermetic packages as
well. The chip and hermetically packaged transistors
can be screened to a JANTXV equivalent level.
Applications
The MP4T645 family of bipolar NPN transistors can be
used for low noise, high associated gain. large dynamic
range amplifiers up to approximately 4 GHz. These
transistors can also be used as preamplifier or driver
stages in the same frequency range.
The MP4T645 family of bipolar NPN transistors can also
be used for oscillators or VCOs up to approximately 10
GHz. The passivation consists of silicon dioxide,
commonly known as thermal oxide, and silicon nitride to
produce very low 1/f noise in both amplifiers and
oscillators.
Case Styles
SOT-23
SOT-143
Chip
Micro-X
Silicon Bipolar High f
T
Low Noise Microwave Transistors MP4T645 Series
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 2
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Absolute Maximum Ratings
MP4T645 Series
Collector-Base Voltage
V
CBO
25 V
Collector-Emitter Voltage
V
CEO
12 V
Emitter-Base Voltage
V
EBO
1.5 V
Collector Current
I
C
65 mA
Junction Operating Temperature
T
j
200
C
Storage Temperature
Chip or Ceramic Packages
-65
C to +200
C
Plastic Packages
-65
C to +125
C
Total Power Dissipation at 25
C
Derate Linearly to:
+150
C Chip
400 mW
+125
C Plastic Package (SOT-23)
200 mW
+150
C Ceramic Package (Micro-X)
300 mW
Electrical Specifications @ 25
C
MP4T645 Series
Parameter of Test
Condition
Symbol
Units
MP4T64500
Chip
MP4T64535
SOT-23
MP4T64533
Micro-X
Gain Bandwidth Product
V
CE
= 8 volts
f
T
GHz
10 typ
8 typ
9 typ
I
C
= 20 mA
Insertion Power Gain
V
CE
= 8 volts
|S
21E
|
2
dB
I
C
= 20 mA
f = 1 GHz
18 typ
16 typ
17 typ
f = 2 GHz
11 min
10 min
10 min
f = 4 GHz
7 typ
6.5 typ
Noise Figure
V
CE
= 8 volts
NF
dB
I
C
= 7 mA
f = 1 GHz
1.7 max
1.7 max
1.7 max
f = 2 GHz
2.0 typ
2.5 typ
2.0 typ
Unilateral Gain
V
CE
= 8 volts
GTU (max)
dB
I
C
= 7 mA
f = 1 GHz
18 typ
16 typ
17 typ
f = 2 GHz
11 typ
10 typ
11 typ
Maximum Available Gain
V
CE
= 8 volts
MAG
dB
I
C
= 10 mA
f = 2 GHz
14 typ
13 typ
14 typ
f = 4 GHz
12 typ
10 typ
11.5 typ
Power Out at 1 dB
V
CE
= 8 volts
P
1dB
dBm
Compression
I
C
= 10 mA
f = 1 GHz
16 typ
16 typ
16 typ
f = 4 GHz
11 typ
11 typ
11 typ
Note:
The electrical characteristics of the MP4T64539 (SOT-143) are very similar to those of the MP4T64533 (SOT-23).
Silicon Bipolar High fT Low Noise Microwave Transistors MP4T645 Series
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 3
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Electrical Specifications @ 25
C
MP4T645 Series
Parameter
Condition
Symbol
Min
Typical
Max
Units
Collector Cut-off Current
V
CB
= 8 volts
I
CBO
100
nA
I
E
= 0
A
Emitter Cut-off Current
V
EB
= 1 volt
I
EBO
1
A
I
C
= 0
A
Forward Current Gain
V
CE
= 8 volts
h
FE
30
125
250
I
C
= 7 mA
Collector-Base
V
CB
= 10 volts
C
CO
0.3
0.6
pF
Junction Capacitance
I
E
= 0
A
f = 1 MHz
Typical Scattering Parameters in the MIcro-X Package
MP4T64535, V
CE
= 8 Volts, I
C
= 7 mA
Frequency
S11E
S21E
S12E
S22E
(MHz)
Mag.
Angle
Mag.
Angle
Mag.
Angle
Mag
Angle
500
0.583
-114
9.315
116.1
0.052
43.6
0.573
-42.6
1000
0.569
-153
5.399
94.7
0.063
39.0
0.406
-53.0
1500
0.573
-173
3.807
82.0
0.072
40.0
0.357
-57.1
2000
0.587
170
2.980
72.0
0.082
42.5
0.313
-61.8
2500
0.598
159
2.479
62.7
0.092
44.0
0.299
-71.7
3000
0.616
150
2.132
54.8
0.103
45.2
0.304
-78.5
3500
0.645
142
1.935
47.0
0.118
45.5
0.289
-86.5
4000
0.675
132
1.782
38.5
0.130
45.7
0.281
-96.6
4500
0.705
124
1.631
29.6
0.143
45.5
0.292
-105.5
5000
0.749
115
1.538
22.0
0.159
44.5
0.281
-114.1
5500
0.791
106
1.445
14.4
0.176
43.6
0.283
-125.7
6000
0.832
96
1.395
6.1
0.188
42.3
0.306
-135.0
MP4T64535, V
CE
= 8 Volts, I
C
= 10 mA
Frequency
S11E
S21E
S12E
S22E
(MHz)
Mag.
Angle
Mag.
Angle
Mag.
Angle
Mag
Angle
500
0.562
-128
10.477
111.9
0.044
44.5
0.515
-46.2
1000
0.564
-161
5.845
92.1
0.056
44.0
0.358
-53.8
1500
0.575
176
4.088
80.5
0.068
46.5
0.313
-57.2
2000
0.592
166
3.185
70.9
0.080
49.0
0.276
-62.3
2500
0.601
156
2.638
62.0
0.092
49.7
0.268
-71.7
3000
0.618
148
2.266
54.5
0.105
50.1
0.272
-78.3
3500
0.648
139
2.053
46.9
0.122
49.4
0.259
-87.0
4000
0.677
130
1.892
38.6
0.136
48.7
0.253
-96.9
4500
0.706
122
1.734
29.8
0.150
47.9
0.264
-106.0
5000
0.749
113
1.634
22.3
0.167
46.1
0.257
-115.1
5500
0.790
104
1.532
14.8
0.184
44.4
0.259
-126.3
6000
0.831
95
1.482
6.4
0.196
42.6
0.278
-136.0
Silicon Bipolar High f
T
Low Noise Microwave Transistors MP4T645 Series
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 4
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Typical Scattering Parameters in the MIcro-X Package (Cont'd)
MP4T64535, V
CE
= 8 Volts, I
C
= 20 mA
Frequency
S11E
S21E
S12E
S22E
(MHz)
Mag.
Angle
Mag.
Angle
Mag.
Angle
Mag
Angle
500
0.536
-154
11.788
104.0
0.033
49.8
0.390
-46.8
1000
0.565
-177
6.309
87.5
0.046
55.7
0.284
-53.2
1500
0.579
170
4.350
77.0
0.062
57.7
0.270
-54.6
2000
0.592
160
3.368
68.6
0.077
59.3
0.237
-57.5
2500
0.612
151
2.798
60.1
0.093
58.0
0.226
-70.0
3000
0.630
142
2.390
52.6
0.108
56.5
0.243
-77.2
3500
0.660
134
2.156
45.4
0.126
54.4
0.231
-84.4
4000
0.691
125
1.984
37.2
0.141
52.6
0.223
-95.8
4500
0.719
117
1.809
28.4
0.155
50.9
0.240
-105.2
5000
0.760
109
1.697
21.3
0.173
48.5
0.229
-112.6
5500
0.803
101
1.594
13.8
0.192
46.0
0.229
-112.3
6000
0.844
92
1.540
6.0
0.210
44.2
0.258
-136.2
Typical Scattering Parameters in the SOT-23 Package
MP4T64533, V
CE
= 8 Volts, I
C
= 7 mA
Frequency
S11E
S21E
S12E
S22E
(MHz)
Mag.
Angle
Mag.
Angle
Mag.
Angle
Mag
Angle
500
0.421
-95
7.378
126.4
0.062
77.9
0.519
-36.3
1000
0.257
-149
4.384
118.9
0.100
97.9
0.402
-36.9
1500
0.232
-176
3.082
123.3
0.140
116.2
0.368
-39.6
2000
0.238
157
2.408
129.2
0.183
130.9
0.354
-44.7
2500
0.256
140
2.005
136.3
0.224
145.7
0.346
-51.6
3000
0.279
126
1.734
143.2
0.274
160.8
0.339
-58.8
3500
0.310
116
1.498
153.3
0.308
172.0
0.331
-68.5
4000
0.338
106
1.367
163.5
0.350
173.6
0.320
-80.1
4500
0.359
97
1.284
173.8
0.402
161.0
0.327
-90.6
MP4T64533, V
CE
= 8 Volts, I
C
= 10 mA
Frequency
S11E
S21E
S12E
S22E
(MHz)
Mag.
Angle
Mag.
Angle
Mag.
Angle
Mag
Angle
500
0.299
-116
8.385
119.4
0.057
82.1
0.451
-33.9
1000
0.216
-161
4.558
116.9
0.099
102.3
0.354
-33.2
1500
0.215
172
3.185
122.7
0.142
119.5
0.332
-37.7
2000
0.230
151
2.487
129.0
0.188
132.9
0.332
-44.0
2500
0.247
134
2.064
136.4
0.230
146.9
0.332
-50.1
3000
0.267
123
1.783
143.8
0.281
161.5
0.322
-56.1
3500
0.299
114
1.548
153.9
0.315
172.5
0.310
-66.4
4000
0.328
104
1.410
164.0
0.357
173.6
0.299
-79.2
4500
0.352
96
1.320
174.5
0.408
161.3
0.310
-90.1
Silicon Bipolar High fT Low Noise Microwave Transistors MP4T645 Series
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 5
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T645 Series
Typical Performance Curves
NOMINAL POWER DERATING CURVES
0
50
100
150
200
250
300
350
400
450
500
0
25
50
75
100
125
150
175
AMBIENT TEMP (C)
TOTAL POWER
DISSIPATION (mW)
MP4T64500 Chip on
Infinite Heat Sink
MP4T64535 in
Micro-X Package
MP4T64533 in
SOT-23 Package
NOMINAL GAIN vs FREQUENCY at
V
CE
= 8 VOLTS, I
C
= 10 mA (MP4T64535)
0
4
8
12
16
20
24
1
10
FREQUENCY (GHz)
GAIN (dB)
GTU (MAX)
|S
21E
|2
2
5
NOMINAL COLLECTOR-BASE CAPACITANCE vs
COLLECTOR-BASE VOLTAGE (MP4T64535)
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.55
0.6
1
10
100
COLLECTOR-BASE VOLTAGE
(V
CB
) (Volts)
COLLECTOR-BASE
CAPACITANCE (C
CB
) (pF)
NOMINAL GAIN vs COLLECTOR CURRENT at
f = 1.5 GHz, V
CE
= 8 Volts (MP4T64535)
6
7
8
9
10
11
12
13
14
15
1
10
100
COLLECTOR CURRENT (mA)
GAIN (dB)
GTU (MAX)
|S
21E
|2
MAG
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