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Электронный компонент: MP4TD0300G

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Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
1
North America: Tel. (408) 432-1480
Fax (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0300
V4.00
Features
Cascadable 50
Gain Block
3dB Bandwidth: DC to 2.0 GHz
12 dB Typical Gain @ 1.0 GHz
Unconditionally Stable (k>1)
Description
M-Pulse's MP4TD0300 is a high performance silicon
bipolar MMIC chip. The MP4TD0300 is designed for
use where a general purpose 50
gain block is required.
Typical applications include narrow and wide band IF
and RF amplifiers in industrial and military applications.

The MP4TD0300 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.


TYPICAL POWER GAIN vs FREQUENCY
0
2
4
6
8
10
12
14
0.01
0.1
1
10
FR EQUEN CY (G H z)
GA
IN
(
d
B
)
Id=35mA
Gain Flat to D C
Chip Outline Drawing
1,2,3,4
Ground
RF Input
Optional +12 Volt
Optional +15 Volt
Optional RF Output & + 5 Volts*
375
(14.8 mil)
375 (14.8 mil)
Notes: (unless otherwise specified)
1. Chip Thickness is 120
m; 4.8 mils
2. Bond Pads are 40
m; 1.6 mils typical in diameter
3. Output Contact & +DC Voltage Is Normally Made On
Backside Of Chip At Die Attach
4. Tolerance:
m .xx =
.13; mil .x =
.5
Ordering Information
Model No.
Type of Carrier
MP4TD0300G GEL
PACK
MP4TD0300W Waffle
Pack

Electrical Specifications @ T
A
= +25
C, Id = 35 mA; Z0 = 50
Symbol
Parameters
Test Conditions
Units
Min.
Typ.
Max.
Gp
Power Gain (
S21
2)
f = 0.1 GHz
dB
-
13.0
-
Gp
Gain Flatness
f = 0.1 to 1.5 GHz
dB
-
+ 1.0
-
f
3dB
3 dB Bandwidth
-
GHz
-
2.0
-
SWR
in
Input SWR
f = 0.1 to 3.0 GHz
-
-
1.4
-
SWR
out
Output SWR
f = 0.1 to 2.0 GHz
-
-
1.4
-
P
1dB
Output Power @ 1dB Gain Compression
f = 1.0 GHz
dBm
-
10.0
-
NF
50
Noise Figure
f = 1.0 GHz
dB
-
5.5
-
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
-
23.0
-
t
D
Group Delay
f = 1.0 GHz
ps
-
125
-
V
d
Device
Voltage
-
V 4.5 5.0 5.5
dV/dT
Device Voltage Temperature Coefficient
-
mV/
C
- -8.0 -
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0300
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
2
North America: Tel. (408) 432-1480
Fax (408) 432-3440
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Device Current
80 mA
Power Dissipation
2,3
425
mW
RF Input Power
+13 dBm
Junction Temperature
200
C
Storage Temperature
-65
C to +150
C
Thermal Resistance:
jms
= 150
C/W
1. Exceeding these limits may cause permanent damage.
2. Mounting Surface Temperature (TMS)= 25
C.
3. Derate at 22.2 mW/
C for TMS > 181
C
Typical Bias Configuration
IN
OUT
1
2
3
4
RFC (Optional)
C (DC Block)
C (DC Block)
Rbias
Vcc > 7 V
Vd = 5.0 V
Id =
Vcc - Vd
Rbias
MP4TD0300
Typical Performance Curves @ Id = 35 mA, TA = +25
C (unless otherwise noted)

DEVICE CURRENT vs DEVICE VOLTAGE
0
10
20
30
40
50
60
0
1
2
3
4
5
6
Vd, DEVIC E VO LTAGE (V)
I
d
, DE
VI
CE
CURRE
NT
(m
A)


POWER GAIN vs CURRENT
6
7
8
9
10
11
12
13
14
10
20
30
40
50
60
Id, DEVIC E C UR REN T (mA)
GA
IN
(
d
B
)
0.1 GH z
0.5 G H z
1.0 GH z
2.0 GH z

RETURN LOSS vs FREQUENCY
-21
-19
-17
-15
-13
-11
-9
-7
-5
0.1
1
10
F REQ UEN CY (GH z)
RE
T
URN L
O
S
S
(d
B
)
Input
O utput

P
OUT
@ 1dB GAIN COMPRESSION
vs FREQUENCY
0
2
4
6
8
10
12
14
16
0.01
0.1
1
10
FR EQU ENC Y (GH z)
P
OU
T
- 1 d
B
( d
B
m
)
Id=35mA
Id=50mA
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0300
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
3
North America: Tel. (408) 432-1480
Fax (408) 432-3440
NOISE FIGURE vs FREQUENCY
4
4.5
5
5.5
6
6.5
7
0.1
1
10
F REQ UEN CY (GH z)
NO
I
S
E
F
I
G
URE
(d
B
)
Id= 20mA
Id= 35mA
Id= 50mA
REVERSE ISOLATION vs FREQUENCY
-25
-23
-21
-19
-17
-15
-13
-11
0.1
1
10
F REQ UEN CY (GH z)
RE
VE
RS
E
I
S
O
L
AT
I
O
N (d
B
)
Typical Scattering Parameters
Z0 = 50
, T
A
= +25
C, Id = 35 mA
Frequency S11
S21
S12
S22
(GHz)
Mag. Angle Mag. Angle Mag. Angle Mag Angle
0.1 0.119
177.7
4.54
0.1
0.114
0.1
0.096
-18.4
0.2 0.118
177.8
4.52
0.1
0.114
3.2
0.102
-30.7
0.4 0.115
175.0
4.45
0.1
0.117
6.6
0.119
-57.0
0.6 0.107
175.4
4.35
0.1
0.121
9.6
0.140
-78.7
0.8
0.099
179.4 4.21 0.1 0.126 12.3 0.162
-95.7
1.0
0.099
-174.0 4.06 0.1 0.133 13.9 0.181
-110.1
1.5
0.131
-162.5 3.60 0.9 0.152 15.8 0.210
-137.3
2.0
0.184
-166.8 3.11 0.7 0.171 14.3 0.212
-156.7
2.5
0.236
-178.4 2.67 0.5 0.189 11.3 0.194
-169.0
3.0 0.287
167.1
2.31
0.3
0.203
7.7
0.180
-178.3
3.5
0.340 151.8 3.03 0.2 0.215 3.6 0.172 174.5
4.0
0.395 137.0 1.80 0.7 0.224 -0.8 0.169 167.0
4.5
0.443 123.4 1.57 -0.6 0.232 -5.3 0.177 159.2
5.0
0.480 113.0 1.39 -0.1 0.235 -9.0 0.194 152.3