Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0410
Features
Cascadable 50
Gain Block
3dB Bandwidth: DC to 3.0 GHz
9.0 dB Typical Gain @ 1.0 GHz
Unconditionally Stable (k>1)
Hermetic Gold-Ceramic Microstrip Package
Tape and Reel Packaging Available
Description
M-Pulse's MP4TD0410 is a high performance silicon
bipolar MMIC housed in a hermetic high reliability
package for surface mount usage. The MP4TD0410 is
useful where a general purpose 50
gain block with
moderate (+16 dBm) gain compression is required.
Typical applications include narrow and wide band IF
and RF amplifiers in industrial and military applications.
The MP4TD0410 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
0
1
2
3
4
5
6
7
8
9
1 0
0.1
1
1 0
F R E Q U E N C Y (G H z)
GAI
N (
d
B)
Id= 5 0 m A
Gold-Ceramic Microstrip Package Outline
1,2
RF OUT
AND BIAS
RF INPUT
GND
GND
2
3
1
4
.495 .030
12,57 0,76
.004 .002
0,10,05
.035
0,89
.100
2,54
.020
0,51
.040
1,02
Notes: (unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
.005; mm .xx =
.13
Pin Configuration
Pin Number
Pin Description
1 RF
Input
2 & 4
AC/DC Ground
3
RF Output and DC Bias
Ordering Information
Model No.
Package
MA4TD0410 Hermetic
Ceramic
MA4TD0410T
Tape and Reel
Electrical Specifications @ T
A
= +25
C, Id = 50 mA, Z0 = 50
Symbol Parameters
Test
Conditions
Units Min. Typ. Max.
Gp
Power Gain (
S
21
2
)
f = 0.1 GHz
dB
8.0
9.0
9.5
Gp
Gain Flatness
f = 0.1 to 2.0 GHz
dB
-
0.6
1.0
f
3 dB
3 dB Bandwidth
-
GHz
-
3.0
-
SWR
in
Input SWR
f = 0.1 to 3.0 GHz
-
-
1.5
-
SWR
out
Output SWR
f = 0.1 to 3.0 GHz
-
-
1.6
-
P
1dB
Output Power @ 1 dB Gain Compression
f = 1.0 GHz
dBm
-
12.5
-
NF
50
Noise Figure
f = 1.0 GHz
dB
-
6.2
-
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
-
25.5
-
t
D
Group Delay
f = 1.0 GHz
ps
-
125
-
V
d
Device
Voltage
-
V 4.75
5.25
5.75
dV/dT
Device Voltage Temperature Coefficient
-
mV/
C
- -8.0 -
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0410
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 2
PH (408) 432-1480 FX (408) 432-3440
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Device Current
100 mA
Power Dissipation
2,3
650
mW
RF Input Power
+13 dBm
Junction Temperature
150
C
Storage Temperature
-65
C to +200
C
Thermal Resistance:
jc
= 140
C/W
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = 25
C.
3. Derate at 7.1 mW/
C for Tc > 109
C.
Typical Bias Configuration
IN
OUT
1
2
MP4TD0410
3
4
RFC (Optional)
C (DC Block)
C (DC Block)
Rbias
Vcc > 7 V
Vd = 5.25 V
Id =
Vcc - Vd
Rbias
Typical Performance Curves @
Id
= 50 mA, TA = +25
C (unless otherwise noted)
DEVICE CURRENT vs DEVICE VOLTAGE
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
8 0
0
1
2
3
4
5
6
Vd, D E VIC E VO L T AG E (V)
I
d
, DEVI
CE CURRENT (
m
A)
POWER GAIN vs CURRENT
2
3
4
5
6
7
8
9
1 0
2 0
3 0
4 0
5 0
6 0
7 0
80
Id, D E VIC E C U R R E N T (m A)
GAI
N
(
d
B)
f= .1 G H z
f= 1.0 G H z
f= 2 .0 G H z
RETURN LOSS vs FREQUENCY
-30
-25
-20
-15
-10
-5
0
0 .1
1
1 0
F R E Q U E N C Y (G H z)
RETURN LOSS (
d
B)
Input
O utput
P
OUT
@ 1DB GAIN COMPRESSION
vs FREQUENCY
0
2
4
6
8
1 0
1 2
1 4
1 6
1 8
0 .1
1
1 0
FR E Q U E N C Y (G H z)
P
OU
T
-1dB
(dB
m
)
Id= 7 0 m A
Id= 5 0 m A
Id= 3 0 m A
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0410
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 3
PH (408) 432-1480 FX (408) 432-3440
NOISE FIGURE vs FREQUENCY
5 .5
5 .7
5 .9
6 .1
6 .3
6 .5
6 .7
6 .9
7 .1
7 .3
7 .5
0 .1
1
1 0
F R E Q U E N C Y (G H z)
NOI
S
E FI
GURE (
d
B)
Id= 3 0m
Id= 5 0 m A
Id= 7 0 m A
REVERSE ISOLATION vs FREQUENCY
-2 0
-1 8
-1 6
-1 4
-1 2
-1 0
-8
0 .1
1
1 0
FR E Q U E N C Y (G H z)
REVERSE I
S
OLATI
O
N (
d
B)
Typical Scattering Parameters
Z0 = 50
, T
A
= +25
C, Id = 50 mA
Frequency S11
S21
S12
S22
(GHz)
Mag. Angle Mag. Angle Mag. Angle Mag Angle
0.1 0.197
177.2
2.87
175.8
0.147 2.0 0.073
-14.7
0.2 0.191
175.3
2.87
171.6
0.148 3.9 0.080
-29.5
0.3 0.186
173.1
2.87
167.5
0.148 5.4 0.088
-42.7
0.4 0.181
171.2
2.87
163.2
0.150 7.0 0.098
-53.0
0.5 0.174
169.2
2.87
158.9
0.150 8.8 0.109
-61.5
0.6 0.165
167.3
2.87
154.6
0.152 10.5 0.117
-69.7
0.7 0.156
135.7
2.85
150.5
0.153 12.1 0.123
-76.7
0.8 0.140
163.9
2.84
140.3
0.153 13.4 0.128
-88.7
0.9 0.139
162.9
2.83
142.2
0.154 15.5 0.133
-90.7
1.0 0.132
162.0
2.83
138.1
0.156 17.2 0.137
-98.6
1.5 0.103
173.1
2.69
118.2
0.167 24.0 0.183
-128.2
2.0 0.100
174.5
2.52
100.0
0.181 29.8 0.185
-147.1
2.5 0.162
174.9
2.35
84.3
0.194 33.5 0.208
-163.5
3.0 0.236
165.9
2.19
73.2
0.207 37.6 0.194
-173.5
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