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Электронный компонент: MP4TD0420

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Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0420
Features
Cascadable 50
Gain Block
3dB Bandwidth: DC to 2.5 GHz
9.5 dB Typical Gain @ 1.0 GHz
Unconditionally Stable (k>1)
Hermetic Gold-BeO Microstrip Package
Tape and Reel Packaging Available
Description
M-Pulse's MP4TD0420 is a high performance silicon
bipolar MMIC housed in a hermetic high reliability
stripline package. The MP4TD0420 is useful where a
general purpose 50
gain block with moderate P
1 dB
characteristic is required. Typical applications include
narrow and wide band IF and RF amplifiers in industrial
and military applications.
The MP4TD0420 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
5
6
7
8
9
1 0
1 1
1 2
0 .1
1
1 0
FR E Q U E N C Y (G H z)
GAI
N
(
d
B)
G ain Flat to D C
Id = 90 m A
Gold-BeO Microstrip Package Outline
1,2
0.060
1.525
0.030
0.762
0.30
7.62
TYP.
0.132
5.42
DIA
0.205
5.21
DIA
0.020
0.51
0.053
1.35
0.003
0.076
1
2
4
3
Notes: (unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
.005; mm .xx =
.13

Pin Configuration
Pin Number
Pin Description
1 RF
Input
2 & 4
AC/DC Ground
3
RF Output and DC Bias

Ordering Information
Model No.
Package
MP4TD0420 Hermetic
Ceramic
Electrical Specifications @ T
A
= +25
C, Id = 90 mA, Z0 = 50
Symbol Parameters Test
Conditions
Units Min.
Typ.
Max.
Gp
Power Gain (
S
21
2
)
f = 0.1 GHz
dB
8.5
9.5
10.0
Gp
Gain Flatness
f = 0.1 to 1.5 GHz
dB
-
0.5
0.8
f
3 dB
3 dB Bandwidth
-
GHz
-
2.5
-
SWR
in
Input SWR
f = 0.1 to 3.0 GHz
-
-
1.4
-
SWR
out
Output SWR
f = 0.1 to 3.0 GHz
-
-
1.8
-
P
1 dB
Output Power @ 1 dB Gain Compression
f = 1.0 GHz
dBm
14.0
15.0
-
NF
50
Noise Figure
f = 1.0 GHz
dB
-
6.5
-
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
-
28.0
-
t
D
Group Delay
f = 1.0 GHz
ps
-
140
-
V
d
Device
Voltage
-
V 5.7
6.3
6.9
dV/dT
Device Voltage Temperature Coefficient
-
mV/
C
- -8.0 -
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0420
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 2
PH (408) 432-1480 FX (408) 432-3440


Absolute Maximum Ratings1
Parameter
Absolute Maximum
Device Current
120 mA
Power Dissipation
2,3
850
mW
RF Input Power
+13 dBm
Junction Temperature
200
C
Storage Temperature
-65
C to +200
C
Thermal Resistance:
jc
= 40
C/W
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = 25
C.
3. Derate at 25 mW/
C for Tc > 166
C.

Typical Bias Configuration
IN
OUT
1
2
MP4TD0420
3
4
RFC (Optional)
C (DC Block)
C (DC Block)
Rbias
Vcc > 10 V
Vd = 6.3 V
Id = Vcc - Vd
Rbias

Typical Performance Curves @ Id = 90 mA, TA = +25
C (unless otherwise noted)

DEVICE CURRENT vs DEVICE VOLTAGE
0
2 0
4 0
6 0
8 0
0
1
2
3
4
5
6
Vd, D E VIC E VO L T AG E (V)
I
d
, DEVI
CE CURRENT (
m
A)


POWER GAIN vs CURRENT
5
6
7
8
9
1 0
1 1
0
25
5 0
75
10 0
1 2 5
Id, D E VIC E C U R R E N T (m A)
GAI
N
(
d
B)
f= 0 .1 G H z
f= 1 .0 G H z
f= 2 .0 G H z
RETURN LOSS vs FREQUENCY
-2 5
-2 0
-1 5
-1 0
-5
0
0 .1
1
1 0
FR E Q U E N C Y (G H z)
RETURN LOSS (
d
B)
Input
O utput

P
OUT
@ 1dB GAIN COMPRESSION
vs FREQUENCY
5
7
9
1 1
1 3
1 5
1 7
1 9
2 1
0 .1
1
1 0
FR E Q U E N C Y (G H z)
Pout -1dB (dBm)
Id= 9 0 m A
Id= 6 0 m A
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0420
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 3
PH (408) 432-1480 FX (408) 432-3440
NOISE FIGURE vs FREQUENCY
5 .5
6
6 .5
7
7 .5
0 .1
1
1 0
F R E Q U E N C Y (G H z)
NOI
S
E FI
GURE (
d
B)
Id= 6 0 m A
Id= 9 0m A
Id= 11 0 m A
REVERSE ISOLATION vs FREQUENCY
-1 7
-1 6
-1 5
-1 4
-1 3
-1 2
0 .1
1
1 0
FR E Q U E N C Y (G H z)
REVERSE I
S
OLATI
O
N (
d
B)




Typical Scattering Parameters
Z0 = 50
, T
A
= +25
C, Id = 90 mA
Frequency S11
S21
S12
S22
(GHz)
Mag. Angle Mag. Angle Mag. Angle Mag Angle
0.1 0.179
179.5
3.06
174.8
0.144 0.7 0.09
-17.8
0.2 0.177
179.6
3.05
169.7
0.144 2.0 0.10
-32.5
0.3 0.175
178.9
3.03
164.5
0.144 3.1 0.12
-43.3
0.4 0.171
177.5
3.01
159.8
0.144 5.1 0.13
-54.7
0.5 0.162
178.0
3.01
155.1
0.146 6.9 0.15
-66.2
0.6 0.153
178.2
3.00
150.1
0.147 7.3 0.16
-74.9
0.7 0.146
179.6
2.99
144.9
0.149 9.1 0.17
-81.5
0.8 0.138
-178.8
2.96
140.1 0.150 9.4 0.19 -88.5
0.9 0.131
-175.9
2.94
135.4 0.152 11.2 0.20 -92.9
1.0 0.124
-174.6
2.92
130.4 0.155 12.1 0.21 -97.7
1.1 0.118
-172.2
2.87
125.4 0.156 12.0 0.23 -102.1
1.2 0.116
-170.3
2.83
120.9 0.160 13.6 0.23 -106.9
1.3 0.120
-165.3
2.79
116.4 0.163 14.6 0.25 -111.2
1.4 0.124
-163.0
2.76
111.4 0.165 14.8 0.26 -114.3
1.5 0.130
-158.4
2.71
106.6 0.167 14.9 0.27 -116.3
1.6 0.127
-152.6
2.65
102.2 0.170 15.9 0.27 -118.5
1.7 0.132
-147.4
2.61
98.5 0.174 16.5 0.27 -118.9
1.8 0.127
-144.9
2.58
94.1 0.178 16.5 0.27 -120.2
1.9 0.131
-143.7
2.51
89.8 0.178 16.5 0.27 -122.5
2.0 0.131
-148.7
2.44
86.6 0.181 18.4 0.26 -127.2
2.1 0.133
-149.9
2.42
82.4 0.184 18.0 0.26 -130.4
2.2 0.142
-152.5
2.34
78.1 0.191 18.5 0.27 -134.3
2.3 0.156
-154.5
2.27
74.8 0.193 17.1 0.28 -135.5
2.4 0.163
-156.3
2.23
81.8 0.195 18.1 0.28 -135.7
2.5 0.166
-157.2
2.21
68.2 0.200 18.3 0.29 -134.2
2.6 0.166
-157.1
2.15
64.1 0.207 17.6 0.28 -134.4
2.7 0.173
-159.7
2.07
60.7 0.207 17.3 0.28 -134.8
2.8 0.171
-165.3
2.02
58.8 0.211 18.4 0.27 -136.8
2.9 0.175
-166.9
2.01
55.4 0.214 18.9 0.26 -138.2
3.0 0.194
-170.4
1.94
51.8 0.216 17.4 0.27 -139.8