Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0470
Features
Cascadable 50
Gain Block
3dB Bandwidth: DC to 3.0 GHz
9.0 dB Typical Gain @ 1.0 GHz
Unconditionally Stable (k>1)
Hermetic Gold-Ceramic Microstrip Package
Tape and Reel Packaging Available
Description
M-Pulse's MP4TD0470 is a high performance silicon
bipolar MMIC housed in a hermetic high reliability
package for surface mount usage. The MP4TD0470 is
useful where a general purpose 50
gain block with
moderate (+16dBm) gain compression is required.
Typical applications include narrow and wide band IF
and RF amplifiers in industrial and military applications.
The MP4TD0470 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
0
1
2
3
4
5
6
7
8
9
1 0
0.1
1
1 0
FR E Q U E N C Y (G H z)
GAI
N (
d
B)
G ain Flat to D C
Id = 5 0 m A
Gold-Ceramic Microstrip Package Outline
1,2
RF OUT
AND BIAS
RF INPUT
GND
GND
2
3
1
4
.495 .030
12,57 0,76
.004 .002
0,10,05
.035
0,89
.070
1,78
.020
0,51
.040
1,02
Notes: (unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
.005; mm .xx =
.13
Pin Configuration
Pin Number
Pin Description
1 RF
Input
2 & 4
AC/DC Ground
3
RF Output and DC Bias
Ordering Information
Model No.
Package
MP4TD0470 Hermetic
Ceramic
MP4TD0470T
Tape and Reel
Electrical Specifications @ T
A
= +25
C, Id = 50 mA, Z0 = 50
Symbol Parameters
Test
Conditions
Units Min. Typ. Max.
Gp
Power Gain (
S
21
2
)
f = 0.1 GHz
dB
8.0
9.0
9.5
Gp
Gain Flatness
f = 0.1 to 2.0 GHz
dB
-
0.6
1.0
f
3 dB
3 dB Bandwidth
-
GHz
-
3.0
-
SWR
in
Input SWR
f = 0.1 to 3.0 GHz
-
-
1.6
-
SWR
out
Output SWR
f = 0.1 to 3.0 GHz
-
-
1.7
-
P
1dB
Output Power @ 1 dB Gain Compression
f = 1.0 GHz
dBm
-
12.5
-
NF
50
Noise Figure
f = 1.0 GHz
dB
-
6.3
-
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
-
25.5
-
t
D
Group Delay
f = 1.0 GHz
ps
-
125
-
V
d
Device
Voltage
-
V 4.75
5.25
5.75
dV/dT
Device Voltage Temperature Coefficient
-
mV/
C
- -8.0 -
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0470
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 2
PH (408) 432-1480 FX (408) 432-3440
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Device Current
100 mA
Power Dissipation
2,3
650
mW
RF Input Power
+13 dBm
Junction Temperature
150
C
Storage Temperature
-65
C to +200
C
Thermal Resistance:
jc
= 140
C/W
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = 25
C.
3. Derate at 7.1 mW/
C for Tc > 109
C.
Typical Bias Configuration
IN
OUT
1
2
MP4TD0470
3
4
RFC (Optional)
C (DC Block)
C (DC Block)
Rbias
Vcc > 7 V
Vd = 5.25 V
Id =
Vcc - Vd
Rbias
Typical Performance Curves @ Id = 50 mA, TA = +25
C (unless otherwise noted)
DEVICE CURRENT vs DEVICE VOLTAGE
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
8 0
0
1
2
3
4
5
6
Vd, D E VIC E VO L T AG E (V)
I
d
, DEVI
CE CURRENT (
m
A)
POWER GAIN vs CURRENT
2
3
4
5
6
7
8
9
1 0
2 0
3 0
4 0
5 0
6 0
7 0
80
Id, D E VIC E C U R R E N T (m A)
GAI
N
(
d
B)
f= .1 G H z
f= 1.0 G H z
f= 2.0 G H z
RETURN LOSS vs FREQUENCY
-2 5
-2 0
-1 5
-1 0
-5
0
0 .1
1
10
FR E Q U E N C Y (G H z)
RETURN LOSS (
d
B)
Input
O utput
P
OUT
@ -1DB GAIN COMPRESSION
vs FREQUENCY
0
2
4
6
8
1 0
1 2
1 4
1 6
1 8
0 .1
1
1 0
FR E Q U E N C Y G H z
P
OU
T
-1dB
(dB
m
)
Id= 7 0 m A
Id= 5 0 m A
Id= 30 m A
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0470
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 3
PH (408) 432-1480 FX (408) 432-3440
NOISE FIGURE vs FREQUENCY
5 .5
5 .7
5 .9
6 .1
6 .3
6 .5
6 .7
6 .9
7 .1
7 .3
7 .5
0 .1
1
1 0
FR E Q U E N C Y (G H z)
NOI
S
E FI
GURE (
d
B)
Id= 3 0 m A
Id= 5 0 m A
Id= 70 m A
REVERSE ISOLATION vs FREQUENCY
-2 0
-1 9
-1 8
-1 7
-1 6
-1 5
-1 4
-1 3
-1 2
-1 1
-1 0
0 .1
1
1 0
F R E Q U E N C Y (G H z)
REVERSE I
S
OLATI
O
N (
d
B)
Typical Scattering Parameters
Z0 = 50
, T
A
= +25
C, Id = 50 mA
Frequency S11
S21
S12
S22
(GHz)
Mag. Angle Mag. Angle Mag. Angle Mag Angle
0.1 0.192
169.4
2.86
174.6 0.148 4.9 0.070 3.8
0.2 0.191
170.2
2.86
171.9
0.147 5.4 0.079
-12.4
0.4 0.188
171.7
2.86
164.9
0.147 7.3 0.102
-47.9
0.6 0.180
170.6
2.85
157.3
0.150 10.4 0.128
-73.9
0.8 0.171
169.6
2.83
149.8
0.154 13.8 0.153
-90.2
1.0 0.165
170.1
2.80
142.4
0.158 17.0 0.177
-102.2
1.5 0.163
176.1
2.71
124.2
0.172 24.0 0.228
-126.3
2.0 0.199
-178.6
2.57
106.6 0.188 28.6 0.258 -146.0
2.5 0.245
179.8
2.37
88.7
0.204 31.4 0.266
-161.5
3.0 0.300
173.3
2.14
75.6
0.216 33.8 0.258
-171.2
3.5 0.355
163.9
1.91
64.4
0.228 35.5 0.253
-177.6
4.0 0.407
153.3
1.73
55.0 0.234 37.2 0.251 178.5
4.5 0.456
142.3
1.58
46.2 0.241 40.3 0.262 176.4
5.0 0.508
131.2
1.44
39.1 0.252 42.8 0.279 173.8
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