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Электронный компонент: MP4TD0600W

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Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0600

Features
Cascadable 50
Gain Block
3dB Bandwidth: DC to 0.8 GHz
18.5 dB Typical Gain @ 0.5 GHz
Unconditionally Stable (k>1)
Low Voltage Operation
Description
M-Pulse's MP4TD0600 is a high performance silicon
bipolar MMIC chip. The MP4TD0600 is designed for
use where a general purpose 50
gain block is required.
Typical applications include narrow and wide band IF
and RF amplifiers in industrial and military applications.

The MP4TD0600 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
0
2
4
6
8
1 0
1 2
1 4
1 6
1 8
2 0
2 2
0 .1
1
1 0
FR E Q U EN C Y (G H z)
GA
I
N
(
d
B
)
I d= 16 m A
Chip Outline Drawing
1,2,3,4
RF Input
Optional +15 Volts
Optional +12 Volts
Optional +5 Volts
Optional RF Output & +3.5 Volts
Ground
375
(14.8 mil)
375 (14.8 mil)
Notes: (unless otherwise specified)
1. Chip Thickness is 120
m; 4.8 mils
2. Bond Pads are 40
m; 1.6 mils typical in diameter
3. Output Contact & +DC Voltage Is Normally Made On
Backside Of Chip At Die Attach
4. Tolerance:
m .xx =
.13; mil .x =
.5

Ordering Information
Model No.
Type of Carrier
MP4TD0600G GEL
PACK
MP4TD0600W Waffle
Pack
Electrical Specifications @ T
A
= +25
C, Id = 16 mA, Z0 = 50
Symbol Parameters
Test
Conditions
Units Min. Typ. Max.
Gp
Power Gain (
S
21
2
)
f = 0.1 GHz
dB
-
20.0
-
Gp
Gain Flatness
f = 0.1 to 0.6 GHz
dB
-
0.7
-
f
3dB
3 dB Bandwidth
-
GHz
-
0.8
-
SWR
in
Input SWR
f = 0.1 to 1.5 GHz
-
-
2.0
-
SWR
out
Output SWR
f = 0.1 to 2.0 GHz
-
-
1.8
-
P
1dB
Output Power @ 1 dB Gain Compression
f = 0.5 GHz
dBm
-
3.0
-
NF
50
Noise Figure
f = 0.5 GHz
dB
-
3.0
-
IP
3
Third Order Intercept Point
f = 0.5 GHz
dBm
-
14.5
-
t
D
Group Delay
f = 0.5 GHz
ps
-
200
-
V
d
Device
Voltage
-
V 3.1 3.5 3.9
dV/dT
Device Voltage Temperature Coefficient
-
mV/
C
- -8.0 -
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0600
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
2
PH (408) 432-1480 FX (408) 432-3440
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Device Current
50 mA
Power Dissipation
2,3
200
mW
RF Input Power
+20 dBm
Junction Temperature
200
C
Storage Temperature
-65
C to +200
C
Thermal Resistance:
jc
= 50
C/W
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = 25
C.
3. Derate for at 20 mW/
C for Tc > 190
C.
Typical Bias Configuration
IN
OUT
1
2
3
4
RFC (Optional)
C (DC Block)
C (DC Block)
Rbias
Vcc > 5.5 V
Vd =3.5 V
Id =
Vcc - Vd
Rbias
MP4TD0600
Typical Performance Curves @ Id = 16 mA, TA = +25
C (unless otherwise noted)

DEVICE CURRENT vs DEVICE VOLTAGE
0
5
1 0
1 5
2 0
2 5
0
1
2
3
4
Vd, D E VIC E VO LTA G E (V)
I
d
,
DE
VI
CE
CURRE
NT
(
m
A
)



POWER GAIN vs CURRENT
0
5
10
15
20
25
1 0
1 5
20
2 5
30
3 5
40
Id, D E VIC E C U R R E N T (m A)
GA
I
N
(
d
B
)
0.1 G H z
0 .5 G H z
1.0 G H z
2 .0 G H z

RETURN LOSS vs FREQUENCY
-30
-25
-20
-15
-10
-5
0
0.1
1
1 0
F R EQ U EN C Y (G H z)
RE
T
URN L
O
S
S
(
d
B
)
IN P U T
O U T P U T


P
OUT
@ 1dB GAIN COMPRESSION
vs FREQUENCY
0
2
4
6
8
1 0
1 2
0 .1
1
1 0
FR E Q U EN C Y (G H z)
P
OU
T
- 1
d
B
(dB
m
)
I d= 16 m A
Id = 20 m A
Id= 3 0m A
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0600
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
3
PH (408) 432-1480 FX (408) 432-3440
NOISE FIGURE vs FREQUENCY
2
2.5
3
3.5
4
4.5
5
0 .1
1
1 0
F R EQ U E N C Y (G H z)
NO
I
S
E
F
I
G
URE
(
d
B
)
Id= 1 6m A
Id= 12m A
Id= 2 0m A
REVERSE ISOLATION vs FREQUENCY
-23
-21
-19
-17
-15
-13
-11
0.1
1
1 0
F R E QU E N C Y (G H z)
RE
VE
RS
E
I
S
O
L
AT
I
O
N (
d
B
)





Typical Scattering Parameters
Z0 = 50
, T
A
= +25
C, Id = 16 mA
Frequency S11
S22
S12
S22
(GHz)
Mag. Angle Mag. Angle Mag. Angle Mag Angle
0.1 0.055
-153.1
9.47
171.0
0.076
5.8
0.053
-55.9
0.2 0.068
-148.6
9.30
162.3
0.077
8.4
0.092
-79.0
0.3
0.094
-134.8 8.90 154.3 0.080 16.3 0.131
-101.8
0.4
0.111
-135.4 8.57 146.3 0.083 20.2 0.165
-113.0
0.5
0.134
-133.4 8.29 138.8 0.089 24.9 0.194
-123.2
0.6
0.156
-138.3 7.78 131.9 0.096 27.3 0.215
-135.2
0.7
0.175
-139.3 7.41 125.1 0.103 28.2 0.237
-142.7
0.8
0.200
-140.2 6.93 119.4 0.106 30.6 0.254
-153.5
9.0
0.224
-143.2 6.54 114.0 0.109 31.2 0.266
-159.7
1.0
0.243
-147.8 6.09 109.0 0.118 33.8 0.277
-167.4
1.5
0.334
-164.4 4.55 87.9 0.143 36.5 0.292
167.5
2.0
0.408
177.9 3.48 73.0 0.163 35.7 0.278
148.9
2.5
0.474
163.1 2.79 60.9 0.183 36.2 0.236
135.8
3.0
0.513
150.8 2.34 52.9 0.191 38.3 0.218
130.1