Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0770
Features
Cascadable 50
Gain Block
Low Operating Voltage (4.0 V Typical Vd)
3dB Bandwidth: DC to 1.5 GHz
11.6 dB Typical Gain @ 1.0 GHz
Unconditionally Stable (k>1)
Hermetic Gold-Ceramic Microstrip Package
Tape and Reel Packaging Available
Description
M-Pulse's MP4TD0770 is a high performance silicon
bipolar MMIC housed in a hermetic high reliability
stripline package. The MP4TD0770 is useful where a
general purpose 50
gain block with good noise figure
is required. Typical applications include narrow and
wide band IF and RF amplifiers in industrial and military
applications.
The MP4TD0770 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
0
2
4
6
8
1 0
1 2
1 4
0.1
1
1 0
FR E Q U E N C Y (G H z)
GAI
N
(
d
B)
Id = 2 2 m A
G ain F lat to D C
Gold-Ceramic Microstrip Package Outline
1,2
RF OUT
AND BIAS
RF INPUT
GND
GND
2
3
1
4
.495 .030
12,57 0,76
.004 .002
0,1 0,05
.035
0,89
.070
1,78
.020
0,51
.040
1,02
Notes: (unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
.005; mm .xx =
.13
Pin Configuration
Pin Number
Pin Description
1 RF
Input
2 & 4
AC/DC Ground
3
RF Output and DC Bias
Ordering Information
Model No.
Package
MP4TD0770 Hermetic
Ceramic
MP4TD0770T
Tape and Reel
Electrical Specifications @ T
A
= +25
C, Id = 22 mA, Z0 = 50
Symbol Parameters
Test
Conditions
Units Min. Typ. Max.
Gp
Power Gain (
S
21
2
)
f = 0.1 GHz
dB
12.5
13.5
14.5
Gp
Gain Flatness
f = 0.1 to 1.0 GHz
dB
-
1.0
1.2
f
3 dB
3 dB Bandwidth
-
GHz
-
1.5
-
SWR
in
Input SWR
f = 0.1 to 1.5 GHz
-
-
1.5
-
SWR
out
Output SWR
f = 0.1 to 1.5 GHz
-
-
1.3
-
P
1dB
Output Power @ 1 dB Gain Compression
f = 1.0 GHz
dBm
-
6.0
-
NF
50
Noise Figure
f = 1.0 GHz
dB
-
4.5
-
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
-
19.0
-
t
D
Group Delay
f = 1.0 GHz
ps
-
140
-
V
d
Device
Voltage
-
V 3.6 4.0 4.4
dV/dT
Device Voltage Temperature Coefficient
-
mV/
C
- -7.0 -
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0770
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 2
PH (408) 432-1480 FX (408) 432-3440
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Device Current
60 mA
Power Dissipation
2,3
275
mW
RF Input Power
+13 dBm
Junction Temperature
200
C
Storage Temperature
-65
C to +200
C
Thermal Resistance:
jc
= 155
C/W
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = 25
C.
3. Derate at 6.5 mW/
C for Tc > 157
C.
Typical Bias Configuration
IN
OUT
1
2
MP4TD0770
3
4
RFC (Optional)
C (DC Block)
C (DC Block)
Rbias
Vcc > 7 V
Vd = 4.0 V
Id =
Vcc - Vd
Rbias
Typical Performance Curves @ Id = 22 mA, TA = +25
C (unless otherwise noted)
DEVICE CURRENT vs DEVICE VOLTAGE
0
5
1 0
1 5
2 0
2 5
3 0
3 5
4 0
0
0 .5
1
1.5
2
2 .5
3
3 .5
4
4 .5
Vd, D E VIC E VO L T AG E (V)
I
d
, DEVI
CE CURRENT (
m
A)
POWER GAIN vs CURRENT
0
2
4
6
8
1 0
1 2
1 4
0
5
1 0
1 5
2 0
25
3 0
3 5
4 0
4 5
50
Id, D E VIC E C U R R E N T (m A)
GAI
N
(
d
B)
f= 0.1 G H z
f= 0.5 G H z
f= 1 .0 G H z
f= 2 .0 G H z
RETURN LOSS vs FREQUENCY
-3 5
-3 0
-2 5
-2 0
-1 5
-1 0
-5
0 .1
1
1 0
F R E Q U E N C Y (G H z)
RETURN LOSS (
d
B)
Input
O utput
P
OUT
@ 1dB GAIN COMPRESSION
vs FREQUENCY
0
2
4
6
8
1 0
1 2
1 4
1 6
0 .1
1
1 0
FR E Q U E N C Y (G H z)
P
OU
T
-1dB
(dB
m
)
Id= 2 2 m A
Id= 4 0 m A
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0770
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 3
PH (408) 432-1480 FX (408) 432-3440
NOISE FIGURE vs FREQUENCY
3
3 .5
4
4 .5
5
5 .5
6
0 .1
1
1 0
FR E Q U E N C Y (G H z)
NOI
S
E FI
GURE (
d
B)
Id= 1 5 m A
Id= 2 2 m A
Id= 4 0 m A
REVERSE ISOLATION vs FREQUENCY
-21
-19
-17
-15
-13
-11
-9
-7
-5
0 .1
1
1 0
FR E Q U E N C Y (G H z)
REVERSE I
S
OLATI
O
N (
d
B)
Typical Scattering Parameters
Z0 = 50
, T
A
= +25
C, Id = 22mA
Frequency S11
S21
S12
S22
(GHz)
Mag. Angle Mag. Angle Mag. Angle Mag Angle
0.1 0.42
96.5
4.73
171.5
0.098 9.3 0.033
-52.9
0.2 0.82
97.3
4.72
164.3
0.104 6.2 0.034
-56.2
0.4 0.153
107.3
4.70
150.9
0.116 15.6 0.051
-80.9
0.6 0.185
116.5
4.27
136.9
0.121 20.6 0.071
-103.6
0.8 0.198
128.5
4.03
122.4
0.132 25.7 0.083
-115.6
1.0 0.200
139.6
3.85
110.7
0.143 29.0 0.087
-123.9
1.5 0.203
165.4
3.24
86.3
0.180 34.7 0.086
-138.1
2.0 0.200
173.6
2.64
60.3
0.215 35.7 0.088
-150.0
2.5 0.180
174.2
2.16
46.9
0.243 33.0 0.082
-163.7
3.0 0.152
162.8
1.86
33.5
0.267 31.8 0.087
-163.6
3.5 0.123
144.0
1.69
20.5
0.296 30.3 0.119
-166.8
4.0 0.149
101.8
1.50
14.8
0.318 27.9 0.139
-171.4
4.5 0.250
84.1
1.45
4.7
0.355 25.8 0.183
-170.8
5.0 0.337
79.6
1.34
-2.9 0.389 21.7 0.229
-175.4
60 0.485
72.4
1.19
-12.9 0.456 16.5 0.272 178.3
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