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Электронный компонент: MP4TD0910

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Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0910

Features
Cascadable 50
Gain Block
3dB Bandwidth: DC to 5.0 GHz
7.5 dB Typical Gain @ 1.0 GHz
Input & Output SWR: <1.9 from 0.1 to 3.0 GHz
Hermetic Gold-Ceramic Microstrip Package
Tape and Reel Packaging Available

Description
M-Pulse's MP4TD0910 is a high performance silicon
bipolar MMIC housed in a hermetic high reliability
stripline package. The MP4TD0910 is designed for use
where a general purpose broad band (4.5 GHz) 50
gain block is required. Typical applications include
narrow and wide band IF and RF amplifiers in industrial
and military applications.

The MP4TD0910 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
0
2
4
6
8
1 0
1 2
0.1
1
1 0
FR E Q U E N C Y (G H z)
GAI
N
(
d
B)
Id= 3 5 m A
Gold-Ceramic Microstrip Package Outline
1,2
RF OUT
AND BIAS
RF INPUT
GND
GND
2
3
1
4
.495 .030
12,57 0,76
.004 .002
0,10,05
.030
0,76
.100
2,54
.020
0,51
.040
1,02
Notes: (unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
.005; mm .xx =
.13


Pin Configuration
Pin Number
Pin Description
1 RF
Input
2 & 4
AC/DC Ground
3
RF Output and DC Bias


Ordering Information
Model No.
Package
MP4TD0910 Ceramic
MP4TD0910T
Tape and Reel
Electrical Specifications @ T
A
= +25
C, Id = 35 mA, Z0 = 50
Symbol Parameters
Test
Conditions
Units Min. Typ. Max.
Gp
Power Gain (
S
21
2
)
f = 0.1 GHz
dB
7.0
7.5
9.0
Gp
Gain Flatness
f = 0.1 to 3.0 GHz
dB
-
0.5
0.7
f
3dB
3 dB Bandwidth
-
GHz
-
5.0
-
SWR
in
Input SWR
f = 0.1 to 3.0 GHz
-
-
1.9
-
SWR
out
Output SWR
f = 0.1 to 2.0 GHz
-
-
1.8
-
P
1dB
Output Power @ 1 dB Gain Compression
f = 1.0 GHz
dBm
-
11.5
-
NF
50
Noise Figure
f = 1.0 GHz
dB
-
6.0
-
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
-
23.0
-
t
D
Group Delay
f = 1.0 GHz
ps
-
100
-
V
d
Device
Voltage
-
V 7.0 7.8 8.6
dV/dT
Device Voltage Temperature Coefficient
-
mV/
C
- -16.0 -
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0910
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 2
PH (408) 432-1480 FX (408) 432-3440
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Device Current
80 mA
Power Dissipation
2,3
750
mW
RF Input Power
+20 dBm
Junction Temperature
200
C
Storage Temperature
-65
C to +150
C
Thermal Resistance:
jc
= 145
C/W
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = 25
C.
3. Derate at 6.9 mW/
C for Tc > 91
C.
Typical Bias Configuration
IN
OUT
1
2
3
4
RFC (Optional)
C (DC Block)
C (DC Block)
Rbias
Vcc > 10 V
Vd = 7.8 V
Id =
Vcc - Vd
Rbias
MP4TD0910

Typical Performance Curves @ Id = 35 mA, TA = +25
C (unless otherwise noted)


DEVICE CURRENT vs DEVICE VOLTAGE
0
1 0
2 0
3 0
4 0
5 0
6 0
0
2
4
6
8
10
Vd, D E VIC E VO L T AG E (V)
I
d
, DEVI
CE CURRENT (
m
A)


POWER GAIN vs CURRENT
4
5
6
7
8
9
0
1 0
20
3 0
4 0
5 0
60
Id, D E VIC E C U R R E N T (m A)
GAI
N
(
d
B)
f= 0 .1 G H z
f= 1 .0 G H z
f= 3 .0 G H z


RETURN LOSS vs FREQUENCY
-1 8
-1 6
-1 4
-1 2
-1 0
-8
-6
-4
0 .1
1
1 0
F R E Q U E N C Y (G H z)
RETURN LOSS (
d
B)
IN P U T
O U T PU T

P
OUT
@ 1dB GAIN COMPRESSION vs
FREQUENCY
4
6
8
1 0
1 2
1 4
1 6
0.1
1
1 0
FR E Q U E N C Y (G H z)
Pout
-
P1dB (
d
Bm
)
Id= 3 5 m A
Id= 4 5m A
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0910
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 3
PH (408) 432-1480 FX (408) 432-3440

NOISE FIGURE vs FREQUENCY
5
5 .5
6
6 .5
7
7 .5
8
0 .1
1
1 0
F R E Q U E N C Y (G H z)
NOI
S
E FI
GURE (
d
B)
Id= 2 5 m A
Id= 3 5 m A
Id= 4 5 m A
REVERSE ISOLATION vs FREQUENCY
-1 4
-1 3 .5
-1 3
-1 2 .5
-1 2
0.1
1
1 0
F R E Q U E N C Y (G H z)
REVERSE I
S
OLATI
O
N (
d
B)
Typical Scattering Parameters
Z0 = 50
, T
A
= +25
C, Id = 35 mA
Frequency S11
S21
S12
S22
(GHz)
Mag. Angle Mag. Angle Mag. Angle Mag Angle
0.1 0.153
-163.3
2.48
164.8 0.211 3.8 0.17 -157.5
0.2 0.152
-169.2
2.47
163.9 0.211 3.3 0.17 -160.5
0.3 0.151
-175.7
2.46
162.4 0.211 2.8 0.18 163.4
0.4 0.150
177.3
2.44
160.4
0.212 2.3 0.18
-166.3
0.5 0.150
169.9
2.43
157.9
0.212 1.9 0.18
-169.5
0.6 0.152
165.0
2.42
154.6
0.213 1.8 0.19
-171.0
0.7 0.155
161.2
2.42
151.2
0.213 1.9 0.19
-172.3
0.8 0.159
158.3
2.42
147.7
0.213 2.1 0.20
-174.1
0.9 0.163
155.9
2.42
144.0
0.214 2.1 0.21
-176.1
1.0 0.166
154.1
2.42
140.3
0.215 2.3 0.22
-178.3
1.1 0.169
152.7
2.42
136.5 0.215 2.4 0.24 179.7
1.2 0.172
151.7
2.42
132.7 0.216 2.3 0.26 178.2
1.3 0.175
150.8
2.42
128.9 0.216 2.3 0.27 177.2
1.4 0.178
150.0
2.41
125.1 0.217 2.3 0.29 176.9
1.5 0.183
149.1
2.40
121.4 0.219 2.2 0.30 176.7
1.6 0.189
148.4
2.39
117.6 0.221 2.2 0.30 176.5
1.7 0.196
147.7
2.38
113.9 0.223 2.3 0.30 175.6
1.8 0.205
147.5
2.37
110.3 0.225 2.6 0.30 173.9
1.9 0.215
148.0
2.35
106.6 0.227 2.9 0.31 171.5
2.0 0.226
149.1
2.34
102.8 0.229 3.1 0.31 168.7
2.1 0.238
150.9
2.32
98.9 0.230 3.2 0.33 165.8
2.2 0.249
153.0
2.30
94.8 0.230 2.9 0.34 163.2
2.3 0.259
155.2
2.27
90.7 0.231 2.4 0.36 161.2
2.4 0.267
157.3
2.25
86.7 0.231 1.6 0.37 160.3
2.5 0.273
158.9
2.22
82.7 0.232 0.4 0.39 160.5
2.6 0.278
160.0
2.20
79.0
0.233
-0.8
0.40
161.4
2.7 0.286
160.7
2.17
75.5
0.236
-2.0
0.40
162.2
2.8 0.292
161.0
2.16
72.6
0.240
-3.3
0.40
163.1
2.9 0.297
161.1
2.14
70.3
0.244
-4.3
0.40
164.0
3.0 0.301
161.1
2.13
68.7
0.247
-4.9
0.40
164.7