Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD1135, MP4TD1136
Features
High Dynamic Range Cascadable
50
/75
Gain Block
3dB Bandwidth: 50 MHz to 1.0 GHz
17 dBm Typical P
1dB
@ 0.7 GHz
11 dB Typical Gain @ 0.5 GHz
4.0 dB Typical Noise Figre @ 0.7 GHz
Cost Effective Ceramic Microstrip Package
Tape and Reel Packaging Available
Description
M-Pulse's MP4TD1135 and MP4TD1136 are high
performance silicon bipolar MMICs housed in cost effective
ceramic microstrip packages. The MP4TD1135 and
MP4TD1136 are designed for use in 50
or 75
systems
where a high dynamic range gain block is required. Typical
applications include narrow and wide band IF and RF
amplifiers in industrial and military applications.
The MP4TD1135 and MP4TD1136 are fabricated using a
10 GHz fT silicon bipolar technology that features gold
metalization and IC passivation for increased performance
and reliability.
TYPICAL POWER GAIN vs FREQUENCY
0
2
4
6
8
10
12
14
0.1
1
10
FREQUENCY (GHz)
GAI
N
(dB)
Id=60mA
Ceramic Microstrip Case Style Outlines
1,2,3
Available in short lead version as MP4TD1136.
RF OUT
AND BIAS
RF INPUT
GND
GND
2
3
1
4
.057
1,45
.083
2,11
.100
2,54
.085
2,15
.455 .030
11,54 0,76
.006 .002
0,15 0,05
.022
0,56
.020
0,508
0.010
0.180
4.57 0,25
MA4TD1136
MA4TD1135
Notes: (unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance:
in .xxx =
.005; mm .xx =
.13
3. See last page of data sheet for short lead Micro-X
Pin Configuration
Pin Number
Pin Description
1 RF
Input
2 & 4
AC/DC Ground
3
RF Output and DC Bias
Electrical Specifications @ T
A
= +25
C, Id = 60 mA, Z0 = 50
Symbol
Parameters
Test Conditions
Units
Min.
Typ.
Max.
Gp
Power Gain (
S21
2)
f = 0.1 GHz
dB
11.5
12.5
13.5
Gp
Gain Flatness
f = 0.1 to 0.7 GHz
dB
-
+ 0.9
+ 1.1
f
3dB
3 dB Bandwidth
ref 50 MHz Gain
GHz
-
1.0
-
SWR
in
Input SWR
f = 0.1 to 2.0 GHz
-
-
2.0
-
SWR
out
Output SWR
f = 0.1 to 2.0 GHz
-
-
1.9
-
P
1dB
Output Power @ 1dB Gain Compression
f = 0.7 GHz
dBm
16.0
17.0
-
NF
50
Noise Figure
f = 0.7 GHz
dB
-
4.0
4.5
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
-
30.0
-
t
D
Group Delay
f = 1.0 GHz
ps
-
160
-
V
d
Device
Voltage
-
V 4.5 5.5 6.5
dV/dT
Device Voltage Temperature Coefficient
-
mV/
C
- -8.0 -
Silicon Bipolar MMIC Cascadable Amplifier MP4TD1135, MP4TD1136
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 2
PH (408) 432-1480 FX (408) 432-3440
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Device Current
90 mA
Power Dissipation
2,3
560
mW
RF Input Power
+20 dBm
Junction Temperature
200
C
Storage Temperature
-65
C to +200
C
Thermal Resistance:
jc
= 135
C/W
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = 25
C.
3. Derate at 6.9 mW/
C for Tc > 124
C.
Typical Bias Configuration
IN
OUT
1
2
3
4
RFC (Optional)
C (DC Block)
C (DC Block)
Rbias
Vcc > 7.5 V
Vd = 5.5 V
Id =
Vcc - Vd
Rbias
MP4TD1135
MP4TD1136
Typical Performance Curves @ Id = 60 mA, TA = +25
C (unless otherwise noted)
DEVICE CURRENT vs DEVICE VOLTAGE
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
0
2
4
6
8
Vd, D E VIC E VO L T AG E (V)
I
d
, DEVI
CE CURRENT (
m
A)
POWER GAIN vs CURRENT
0
2
4
6
8
1 0
1 2
1 4
2 0
4 0
6 0
8 0
1 0 0
Id, D E VIC E C U R R E N T (m A)
GAI
N
(
d
B)
0 .1 G H z
0 .5 G H z
1.0 G H z
2 .0 G H z
RETURN LOSS vs FREQUENCY
-2 0
-1 8
-1 6
-1 4
-1 2
-1 0
-8
-6
0 .1
1
1 0
FR E Q U E N C Y (G H z)
RETURN LOSS (
d
B)
IN PU T
O U T PU T
P
OUT
@ 1dB GAIN COMPRESSION
vs FREQUENCY
11
13
15
17
19
21
23
0. 1
1
10
FR E Q U E N C Y (G H z)
P
OU
T
- 1dB
(dB
m
)
Id= 4 0 m A
Id= 6 0 m A
Id= 75 m A
Silicon Bipolar MMIC Cascadable Amplifier MP4TD1135, MP4TD1136
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 3
PH (408) 432-1480 FX (408) 432-3440
NOISE FIGURE vs FREQUENCY
3
3 .5
4
4 .5
5
5 .5
6
0 .1
1
1 0
FR E Q U E N C Y (G H z)
NOI
S
E FI
GURE (
d
B)
Id= 4 0m A
Id= 6 0 m A
Id= 75 m A
REVERSE ISOLATION vs FREQUENCY
-1 9
-1 7
-1 5
-1 3
-1 1
-9
-7
-5
-3
0 .1
1
1 0
FR E Q U E N C Y (G H z)
REVERSE I
S
OLATI
O
N (
d
B)
Typical Scattering Parameters
Z0 = 50
, T
A
= +25
C, Id = 60 mA
Frequency S11
S21
S12
S22
(GHz)
Mag. Angle Mag. Angle Mag. Angle Mag Angle
0.05 0.133
-104.9
4.23
157.5 0.152 14.4 0.120 -98.7
0.1 0.134
-106.7
4.19
156.2 0.154 14.8 0.124 -100.6
0.2 0.140
-112.4
4.05
151.7 0.158 16.2 0.137 -106.6
0.3 0.148
-118.6
3.90
146.8 0.164 17.7 0.153 -113.1
0.4 0.153
-123.0
3.79
143.2 0.168 18.8 0.165 -120.2
0.5 0.162
-129.9
3.62
137.8 0.174 20.5 0.185 -125.1
0.6 0.172
-137.3
3.44
131.2 0.182 22.4 0.208 -132.8
0.7 0.185
-144.4
3.25
124.7 0.190 24.6 0.233 -140.8
0.8 0.198
-148.7
3.12
120.4 0.196 26.3 0.249 -145.3
0.9 0.216
-154.6
2.95
114.4 0.205 28.4 0.271 -151.4
1.0 0.232
-159.8
2.79
108.8 0.214 30.3 0.287 -156.8
1.5 0.279
-179.0
2.23
89.4 0.254 35.8 0.323
-175.4
2.0 0.314
164.8
1.88
74.3 0.294 38.7 0.331 169.7
Ordering Information
Long Lead Model No.
Short Lead Model No.
Package
MP4TD1135 MP4TD1136 Ceramic
MP4TD1135T
MP4TD1136T
Tape and Reel
Mico-X Case Styles
(Long Lead)
(Short Lead)
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