Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD1170
Features
High Dynamic Range Cascadable 50
/75
Gain Block
3dB Bandwidth: 50 MHz to 1.0 GHz
17.0 dBm Typical P
1dB
@ 1.0 GHz
12 dB Typical Gain @ 0.5 GHz
4.0 dB Typical Noise Figure @ 1.0 GHz
Hermetic Gold-Ceramic Microstrip Package
Tape and Reel Packaging Available
Description
M-Pulse's MP4TD1170 is a high performance silicon
bipolar MMIC housed in a hermetic high reliability
package. The MP4TD1170 is designed for use in 50
or 75
systems where a high dynamic range and low
distortion gain block is required. Typical applications
include narrow and wide band IF and RF amplifiers in
industrial and military applications.
The MP4TD1170 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
0
2
4
6
8
10
12
14
0.1
1
10
FREQUENCY (GHz)
GAI
N
(dB)
Id=60mA
Gold-Ceramic Microstrip Package Outline
1,2
RF OUT
AND BIAS
RF INPUT
GND
GND
2
3
1
4
.495 .030
12,57 0,76
.004 .002
0,10,05
.035
0,89
.070
1,78
.020
0,51
.040
1,02
Notes: (unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
.005; mm .xx =
.13
Pin Configuration
Pin Number
Pin Description
1 RF
Input
2 & 4
AC/DC Ground
3
RF Output and DC Bias
Ordering Information
Model No.
Package
MP4TD1170 Hermetic
Ceramic
MP4TD1170T
Tape and Reel
Electrical Specifications @ T
A
= +25
C, Id = 60 mA, Z0 = 50
Symbol Parameters
Test
Conditions
Units Min. Typ. Max.
Gp
Power Gain (
S
21
2
)
f = 0.1 GHz
dB
11.5
12.5
13.5
Gp
Gain Flatness
f = 0.1 to 0.7 GHz
dB
-
0.9
1.1
f
3dB
3 dB Bandwidth
ref 50 MHz Gain
GHz
-
1.0
-
SWR
in
Input SWR
f = 0.1 to 2.0 GHz
-
-
1.8
-
SWR
out
Output SWR
f = 0.1 to 2.0 GHz
-
-
1.9
-
P
1dB
Output Power @ 1 dB Gain Compression
f = 0.7 GHz
dBm
16.0
17.0
-
NF
50
Noise Figure
f = 0.7 GHz
dB
-
4.0
4.5
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
-
30.0
-
t
D
Group Delay
f = 1.0 GHz
ps
-
160
-
V
d
Device
Voltage
-
V 4.5 5.5 6.5
dV/dT
Device Voltage Temperature Coefficient
-
mV/
C
- -8.0 -
SiliconBipolar MMIC Cascadable Amplifier MP4TD1170
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 2
PH (408) 432-1480 FX (408) 432-3440
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Device Current
90 mA
Power Dissipation
2,3
560
mW
RF Input Power
+20 dBm
Junction Temperature
200
C
Storage Temperature
-65
C to +200
C
Thermal Resistance:
jc
= 135
C/W
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = 25
C.
3. Derate at 7.4 mW/
C for Tc > 124
C.
Typical Bias Configuration
IN
OUT
1
2
3
4
RFC (Optional)
C (DC Block)
C (DC Block)
Rbias
Vcc > 7.5 V
Vd = 5.5 V
Id =
Vcc - Vd
Rbias
MP4TD1170
Typical Performance Curves @ Id = 60 mA, TA = +25
C (unless otherwise noted)
DEVICE CURRENT vs DEVICE VOLTAGE
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
0
1
2
3
4
5
6
7
8
Vd, D E VIC E VO L T AG E (V)
I
d
, DEVI
CE CURRENT (
m
A)
POWER GAIN vs CURRENT
0
2
4
6
8
1 0
1 2
1 4
2 0
4 0
6 0
8 0
1 0 0
Id, D E VIC E C U R R E N T (m A)
GAI
N
(
d
B)
0 .1 G H z
0 .5 G H z
1.0 G H z
2 .0 G H z
RETURN LOSS vs FREQUENCY
-2 0
-1 8
-1 6
-1 4
-1 2
-1 0
-8
-6
0 .1
1
1 0
F R E Q U E N C Y (G H z)
RETURN LOSS (
d
B)
IN PU T
O U T PU T
P
OUT
@ 1dB GAIN COMPRESSION
vs FREQUENCY
11
13
15
17
19
21
23
0. 1
1
10
FR E Q U E N C Y (G H z)
P
OU
T
- 1dB
(dB
m
)
Id= 4 0 m A
Id= 6 0 m A
Id= 7 5 m A
SiliconBipolar MMIC Cascadable Amplifier MP4TD1170
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 3
PH (408) 432-1480 FX (408) 432-3440
NOISE FIGURE vs FREQUENCY
3
3 .5
4
4 .5
5
5 .5
6
0 .1
1
1 0
FR E Q U E N C Y (G H z)
NOI
S
E FI
GURE (
d
B)
Id= 4 0m A
Id= 6 0 m A
Id= 75 m A
REVERSE ISOLATION vs FREQUENCY
-1 9
-1 7
-1 5
-1 3
-1 1
-9
-7
-5
-3
0 .1
1
1 0
F R E Q U E N C Y (G H z)
REVERSE I
S
OLATI
O
N (
d
B)
Typical Scattering Parameters
Z0 = 50
, T
A
= +25
C, Id = 60 mA
Frequency S11
S21
S12
S22
(GHz)
Mag. Angle Mag. Angle Mag. Angle Mag Angle
0.05 0.133
-104.9
4.23
157.5 0.152 14.4 0.120 -98.7
0.1 0.134
-106.7
4.19
156.2 0.154 14.8 0.124 -100.6
0.2 0.140
-112.4
4.05
151.7 0.158 16.2 0.137 -106.6
0.3 0.148
-118.6
3.90
146.8 0.164 17.7 0.153 -113.1
0.4 0.153
-123.0
3.79
143.2 0.168 18.8 0.165 -120.2
0.5 0.162
-129.9
3.62
137.8 0.174 20.5 0.185 -125.1
0.6 0.172
-137.3
3.44
131.2 0.182 22.4 0.208 -132.8
0.7 0.185
-144.4
3.25
124.7 0.190 24.6 0.233 -140.8
0.8 0.198
-148.7
3.12
120.4 0.196 26.3 0.249 -145.3
0.9 0.216
-154.6
2.95
114.4 0.205 28.4 0.271 -151.4
1.0 0.232
-159.8
2.79
108.8 0.214 30.3 0.287 -156.8
1.5 0.279
-179.0
2.23
89.4 0.254 35.8 0.323
-175.4
2.0 0.314
164.8
1.88
74.3 0.294 38.7 0.331 169.7
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