M-Pulse Microwave
Low OperatingVoltage, High f
T
SiGe Microwave Transistors
MPSIG001
Features
Designed for Battery Operation
f
T
to 14 GHz
Low Voltage Oscillator and Amplifier
Low Phase Noise and Noise Figure
Hermetic Packaging and Die Available
Can be Screened to JANTX, JANTXV Equivalent Levels
Description
The MPSIG001 family of low voltage, high gain band-
width silicon SiGe transistors provides low noise figure
and high gain at low bias voltages. These transistors
are especially attractive for low operating voltage low
noise amplifiers or driver amplifiers at frequencies to 5
GHz. They are also useful for low phase noise local
oscillators and VCOs in battery operated equipment to
14 GHz.
The MPSIG001 family was designed to have low noise
figure at operating voltages as low as 2 volts. These
transistors also exhibit low phase noise in VCOs
operating at 2.5 volts or less.
Because this transistor family was specifically designed
to operate from low bias voltage, it has superior phase
noise.
The MPSIG001 series transistors are available in
hermetic Micro-X packages and in chip form
(MPSIG00100). Other stripline and hermetic packages
are available. The chip and hermetic packages can be
screened to JANTX, JANTXV equivalent levels
.
Case Styles 535
Micro-X
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 1
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Low Operating Voltage, High f
T
SiGe Transistors MPSIG001 Series
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 2
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Maximum Ratings (TA = 25
C)
MPSIG001 Series
Collector-Base Voltage
V
CBO
10 V
Collector-Emitter Voltage
V
CE
3 V
Emitter-Base Voltage
V
EB
1.5 V
Collector Current
I
C
75 mA
Junction Operating Temperature
T
j
200
C
Storage Temperature
Chip or Ceramic Packages
T
S
-65
C to +200
C
Power Dissipation
Micro-X Pkg (MPSIG001-535)
300 mW
150
C
Electrical Specifications @ 25
C
MPSIG001 Series
Parameter of Test
Condition
Symbol
Units
MPSIG00100
Chip
MPSIG001-535
Micro-X
Gain Bandwidth Product
V
CE
= 2 V
f
T
GHz
18 typ
18 typ
I
C
= 20 mA
Insertion Power Gain
V
CE
= 2 V
|S
21E
|
2
dB
I
C
= 5 mA
f = .9 GHz
17 typ
16 min
f = 2 GHz
11 typ
10.0 min
Noise Figure
V
CE
= 2 V
NF
dB
I
C
= 5 mA
f = .9 GHz
.9 typ
.9 typ
f = 2 GHz
1.1 typ
1.1 typ
Unilateral Gain
V
CE
= 2 V
GTU (max)
dB
I
C
= 5 mA
f = 2 GHz
13 typ
12 typ
Maximum Available Gain
V
CE
= 2 V
MAG
dB
I
C
= 5 mA
f = .9 GHz
19 typ
18 typ
f = 2 GHz
12 typ
11 typ
Output Power at 1 dB
V
CE
= 2 V
P
1dB
dBm
Compression I
C
= 20 mA
f = .9 GHz
15 typ
14 typ
Low Operating Voltage, High fT SiGe Microwave Transistors MPSIG001 Series
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 3
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Electrical Specifications @ 25
C
Parameter Condition
Symbol
Min
Typical
Max
Units
Collector Cut-off Current
V
CB
= 2 volts
I
CBO
100
A
I
E
= 0
A
Collector to Emitter
Ic = 10 uA
BVCEO
2.5
V
Beakdown Voltage
Collector to Base
I
C
= 10 uA
BVCBO
7
V
Breakdown Voltage
Collector to Emitter
I
E
= 10 uA
BVEBO
3
V
Breakdown Voltage
Collector to Substrate
I
R
= 10 uA
BVSO
30
45
V
Breakdown Voltage
Forward Current Gain
V
CE
= 3 volts
h
FE
20 100 300
I
C
= 5 mA
Base Emitter Voltage
V
CC
= 10 uA
VBE
700
800 mV
Typical Common Emitter Scattering Parameters in the MIcro-X Package
MPSIG001-535, V
CE
= 2 Volts, I
C
= 5 mA
Frequency S11E
S21E
S12E
S22E
(MHz) Mag.
Angle
Mag.
Angle
Mag. Angle Mag
Angle
100 .843
-17.6
15.1
165.5
0.021
78.2 0.962
-15.4
200 .792
-34.2
14.0
152.9
0.039
69.1 0.892
-29.7
300 .730
-49.3
12.7
142.5
0.056
62.7 0.805
-41.7
400 .671
-62.5
11.4
133.8
0.065
57.4 0.716
-51.8
500 .622
-73.4
10.2
127.1
0.072
53.7 0.639
-59.9
1000 .455
-108.9
6.1
108.4
0.094
50.4 0.377
-87.5
1500 .400
-132.9
4.2
97.6
0.108
53.9 0.280
-110.0
2000 .341
-148.7
3.3
92.9
0.123
59.3 0.208
-125.8
2500 .355
-167.8
2.8
89.7
0.142
64.8 0.208
-147.2
3000 .366
-179.4
2.4
91.1
0.160
71.4 0.204
-166.8
MPSIG001-535, V
CE
= 2 Volts, I
C
= 10 mA
Frequency S11E
S21E
S12E
S22E
(MHz) Mag.
Angle
Mag.
Angle
Mag. Angle Mag
Angle
100 .708
-27.1
24.5
159.8
0.021
73.8 0.925
-22.7
200 .629
-51.2
21.8
143.8
0.034
65.2 0.801
-42.1
300 .562
-70.9
18.4
132.1
0.044
59.1 0.681
-56.7
400 .498
-86.2
15.6
123.5
0.052
56.4 0577
-68.3
500 .461
-98.1
13.4
117.3
0.057
55.6 0.498
-76.9
1000 .343
-133.4
7.5
102.3
0.079
60.4 0.280
-108.7
1500 .337
-155.1
5.1
93.8
0.102
65.6 0.229
-134.4
2000 .297
-171.5
3.9
90.4
0.128
70.4 0.168
-171.8
2500 .352
173.6
3.3
88.7
0.157
73.6 0.214
171.9
3000 .373
162.8
2.9
90.9
0.178
78.1 0.235
135.9
Low Operating Voltage, High f
T
SiGe Transistors MPSIG001 Series
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 4
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MPSIG001-535
Typical Performance Curves
POWER DERATING CURVE
0
50
100
150
200
250
300
350
0
50
100
150
200
ANBIENT TEMP.
P
O
W
E
R DI
S
.
(M
w
)
MPSIG001-535
NOMINAL GAIN vs COLLECTOR CURRENT at
V
CE
= 2 Volts, f = 2 GHz (MPSIG001-535)
8
9
10
11
12
13
1
6
11
16
Collector Current
GA
IN
(
d
B
)
S21
GU(MAX)
GA(MAX)
NOMINAL GAIN vs COLLECTOR CURRENT at
V
CE
= 2 Volts, f = .9 GHz (MPSIG001-535)
14
16
18
20
22
2
4
6
8
10
12
14
16
Collector Current
G
A
IN
(
d
B
)
S21
GU(MAX)
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