N04L163WC1A-01.fm
NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
N04L163WC1A
Stock No. 23105-07 2/03
1
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
4Mb Ultra-Low Power Asynchronous CMOS SRAM
256Kx16 bit
Overview
The N04L163WC1A is an integrated memory
device containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using
NanoAmp's advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The base design is the same as
NanoAmp's N04L1618C2A, which is processed to
operate at lower voltages. The device operates
with a single chip enable (CE) control and output
enable (OE) to allow for easy memory expansion.
Byte controls (UB and LB) allow the upper and
lower bytes to be accessed independently. The
N04L163WC1A is optimal for various applications
where low-power is critical such as battery backup
and hand-held devices. The device can operate
over a very wide temperature range of -40
o
C to
+85
o
C and is available in JEDEC standard
packages compatible with other standard 256Kb x
16 SRAMs.
Features
Single Wide Power Supply Range
2.3 to 3.6 Volts
Very low standby current
4.0A at 3.0V (Typical)
Very low operating current
2.0mA at 3.0V and 1s (Typical)
Very low Page Mode operating current
0.8mA at 3.0V and 1s (Typical)
Simple memory control
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
Low voltage data retention
Vcc = 1.8V
Very fast output enable access time
25ns OE access time
Automatic power down to standby mode
TTL compatible three-state output driver
Compact space saving BGA package avail-
able
Pin Configurations
Product Family
Part Number
Package
Type
Operating
Temperature
Power
Supply (Vcc)
Speed
Options
Standby
Current (I
SB
),
Typical
Operating
Current (Icc),
Typical
N04L163WC1AB
48 - BGA
-40
o
C to +85
o
C
2.3V - 3.6V
70ns@ 2.7V
55ns @ 2.7V
4
A
2 mA @ 1MHz
N04L163WC1AT 44 - TSOP II
PIN
ONE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A
4
A
3
A
2
A
1
A
0
CE
I/O
0
I/O
1
I/O
2
I/O
3
VCC
VSS
I/O
4
I/O
5
I/O
6
I/O
7
WE
A
16
A
15
A
14
A
13
A
12
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
5
A
6
A
7
OE
UB
LB
I/O
15
I/O
14
I/O
13
I/O
12
VSS
VCC
I/O
11
I/O
10
I/O
9
I/O
8
NC
A
8
A
9
A
10
A
11
A
17
N04L
16
3WC1
A
T
S
OP
1
2
3
4
5
6
A
LB
OE
A
0
A
1
A
2
NC
B
I/O
8
UB
A
3
A
4
CE
I/O
0
C
I/O
9
I/O
10
A
5
A
6
I/O
1
I/O
2
D
V
SS
I/O
11
A
17
A
7
I/O
3
V
CC
E
V
CC
I/O
12
NC
A
16
I/O
4
V
SS
F
I/O
14
I/O
13
A
14
A
15
I/O
5
I/O
6
G
I/O
15
NC
A
12
A
13
WE
I/O
7
H
NC
A
8
A
9
A
10
A
11
NC
48 Pin BGA (top)
6 x 8 mm
Pin Descriptions
Pin Name
Pin Function
A
0
-A
17
Address Inputs
WE
Write Enable Input
CE
Chip Enable Input
OE
Output Enable Input
LB
Lower Byte Enable Input
UB
Upper Byte Enable Input
I/O
0
-I/O
15
Data Inputs/Outputs
NC
Not Connected
V
CC
Power
V
SS
Ground
Stock No. 23105-07 2/03
2
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N04L163WC1A
Functional Block Diagram
Functional Description
CE
WE
OE
UB
LB
I/O
0
- I/O
15
1
1. When UB and LB are in select mode (low), I/O
0
- I/O
15
are affected as shown. When LB only is in the select mode only I/O
0
- I/O
7
are affected as shown. When UB is in the select mode only I/O
8
- I/O
15
are affected as shown.
MODE
POWER
H
X
X
X
X
High Z
Standby
2
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
Standby
L
X
X
H
H
High Z
Standby
2
Standby
L
L
X
3
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
L
1
L
1
Data In
Write
3
Active
L
H
L
L
1
L
1
Data Out
Read
Active
L
H
H
L
1
L
1
High Z
Active
Active
Capacitance
1
1. These parameters are verified in device characterization and are not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input Capacitance
C
IN
V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C
8
pF
I/O Capacitance
C
I/O
V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C
8
pF
Address
Inputs
A0 - A3
Address
Inputs
A4 - A17
Word
Address
Decode
Logic
16K Page
x 16 word
x 16 bit
RAM Array
W
o
rd Mu
x
Input/
Output
Mux
and
Buffers
Page
Address
Decode
Logic
Control
Logic
CE
WE
OE
UB
LB
I/O0 - I/O7
I/O8 - I/O15
Stock No. 23105-07 2/03
3
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N04L163WC1A
Absolute Maximum Ratings
1
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
V
IN,OUT
0.3 to V
CC
+0.3
V
Voltage on V
CC
Supply Relative to V
SS
V
CC
0.3 to 4.5
V
Power Dissipation
P
D
500
mW
Storage Temperature
T
STG
40 to 125
o
C
Operating Temperature
T
A
-40 to +85
o
C
Soldering Temperature and Time
T
SOLDER
240
o
C, 10sec(Lead only)
o
C
Operating Characteristics (Over Specified Temperature Range)
Item
Symbol
Test Conditions
Min.
Typ
1
1. Typical values are measured at Vcc=Vcc Typ., T
A
=25C and are not 100% tested.
Max
Unit
Supply Voltage
V
CC
2.3
3.0
3.6
V
Data Retention Voltage
V
DR
Chip Disabled
2
1.8
V
Input High Voltage
V
IH
1.8
V
CC
+0.3
V
Input Low Voltage
V
IL
0.3
0.6
V
Output High Voltage
V
OH
I
OH
= 0.2mA
V
CC
0.2
V
Output Low Voltage
V
OL
I
OL
= -0.2mA
0.2
V
Input Leakage Current
I
LI
V
IN
= 0 to V
CC
0.5
A
Output Leakage Current
I
LO
OE = V
IH
or Chip Disabled
0.5
A
Read/Write Operating Supply Current
@ 1
s Cycle Time
2
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
I
CC1
V
CC
=3.6 V, V
IN
=V
IH
or V
IL
Chip Enabled, I
OUT
= 0
2.0
3.0
mA
Read/Write Operating Supply Current
@ 70ns Cycle Time
2
I
CC2
V
CC
=3.6 V, V
IN
=V
IH
or V
IL
Chip Enabled, I
OUT
= 0
10
16.0
mA
Page Mode Operating Supply Current
@ 70ns Cycle Time
2
(Refer to Power
Savings with Page Mode Operation
diagram)
I
CC3
V
CC
=3.6 V, V
IN
=V
IH
or V
IL
Chip Enabled, I
OUT
= 0
4
mA
Read/Write Quiescent Operating Sup-
ply Current
3
3. This device assumes a standby mode if the chip is disabled (CE high or UB and LB high). In order to achieve low standby current
all inputs must be within 0.2 volts of either VCC or VSS
I
CC4
V
CC
=3.6 V, V
IN
=V
IH
or V
IL
Chip Enabled, I
OUT
= 0,
f = 0
3.0
mA
Maximum Standby Current
3
I
SB1
V
IN
= V
CC
or 0V
Chip Disabled
t
A
= 85
o
C, VCC = 3.6 V
4.0
20
A
Maximum Data Retention Current
3
I
DR
V
CC
= 1.8V, V
IN
= V
CC
or 0
Chip Disabled, t
A
= 85
o
C
10
A
Stock No. 23105-07 2/03
4
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N04L163WC1A
Power Savings with Page Mode Operation (WE = V
IH
)
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is
considerably lower than standard operating currents for low power SRAMs.
Page Address (A4 - A17 )
LB, UB
OE
CE
Word Address (A0 - A3)
Open page
Word 1
Word 2
Word 16
...
Stock No. 23105-07 2/03
5
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N04L163WC1A
Timing Test Conditions
Item
Input Pulse Level
0.1V
CC
to 0.9 V
CC
Input Rise and Fall Time
5ns
Input and Output Timing Reference Levels
0.5 V
CC
Output Load
CL = 30pF
Operating Temperature
-40 to +85
o
C
Timing
Item
Symbol
-70
-55
Units
2.3 - 2.65 V
2.7 - 3.6 V
2.7 - 3.6 V
Min.
Max.
Min.
Max.
Min.
Max.
Read Cycle Time
t
RC
85
70
55
ns
Address Access Time
t
AA
85
70
55
ns
Chip Enable to Valid Output
t
CO
85
70
55
ns
Output Enable to Valid Output
t
OE
30
25
25
ns
Byte Select to Valid Output
t
LB
, t
UB
85
70
55
ns
Chip Enable to Low-Z output
t
LZ
10
10
10
ns
Output Enable to Low-Z Output
t
OLZ
5
5
5
ns
Byte Select to Low-Z Output
t
LBZ
, t
UBZ
10
10
10
ns
Chip Disable to High-Z Output
t
HZ
0
20
0
20
0
20
ns
Output Disable to High-Z Output
t
OHZ
0
20
0
20
0
20
ns
Byte Select Disable to High-Z Output t
LBHZ
, t
UBHZ
0
20
0
20
0
20
ns
Output Hold from Address Change
t
OH
10
10
10
ns
Write Cycle Time
t
WC
85
70
55
ns
Chip Enable to End of Write
t
CW
50
50
45
ns
Address Valid to End of Write
t
AW
50
50
45
ns
Byte Select to End of Write
t
LBW
, t
UBW
50
50
45
ns
Write Pulse Width
t
WP
40
40
40
ns
Address Setup Time
t
AS
0
0
0
ns
Write Recovery Time
t
WR
0
0
0
ns
Write to High-Z Output
t
WHZ
20
20
20
ns
Data to Write Time Overlap
t
DW
40
40
40
ns
Data Hold from Write Time
t
DH
0
0
0
ns
End Write to Low-Z Output
t
OW
5
5
5
ns
Stock No. 23105-07 2/03
6
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N04L163WC1A
Timing of Read Cycle (CE = OE = V
IL
, WE = V
IH
)
Timing Waveform of Read Cycle (WE= V
IH
)
Address
Data Out
t
RC
t
AA
t
OH
Data Valid
Previous Data Valid
Address
LB, UB
OE
Data Valid
t
RC
t
AA
t
CO
t
HZ
t
OHZ
t
LBHZ,
t
UBHZ
t
OLZ
t
OE
t
LZ
High-Z
Data Out
t
LB,
t
UB
t
LBLZ,
t
UBLZ
CE
Stock No. 23105-07 2/03
7
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N04L163WC1A
Timing Waveform of Write Cycle (WE control)
Timing Waveform of Write Cycle (CE Control)
Address
Data In
CE
LB, UB
Data Valid
t
WC
t
AW
t
CW
t
WR
t
WHZ
t
DH
High-Z
WE
Data Out
High-Z
t
OW
t
AS
t
WP
t
DW
t
LBW
, t
UBW
Address
WE
Data Valid
t
WC
t
AW
t
CW
t
WR
t
DH
LB, UB
Data In
High-Z
t
AS
t
WP
t
LZ
t
DW
t
LBW
, t
UBW
Data Out
t
WHZ
CE
Stock No. 23105-07 2/03
8
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N04L163WC1A
44-Lead TSOP II Package (T44)
Note:
1. All dimensions in inches (Millimeters)
2. Package dimensions exclude molding flash
18.410.13
10.160.13
SEE DETAIL B
1.100.15
11.760.20
0.45
0.30
0.80mm REF
DETAIL B
0.80mm REF
0
o
-8
o
0.20
0.00
Stock No. 23105-07 2/03
9
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N04L163WC1A
Ball Grid Array Package
Dimensions (mm)
D
E
e = 0.75
BALL
MATRIX
TYPE
SD
SE
J
K
60.10
80.10
0.375
0.375
1.125
1.375
FULL
SIDE VIEW
TOP VIEW
BOTTOM VIEW
E
D
A1 BALL PAD
CORNER (3)
1.240.10
0.280.05
0.15
0.05
Z
Z
1. 0.350.05 DIA.
1. DIMENSION IS MEASURED AT THE
MAXIMUM SOLDER BALL DIAMETER.
PARALLEL TO PRIMARY Z.
2. PRIMARY DATUM Z AND SEATING
PLANE ARE DEFINED BY THE
SPHERICAL CROWNS OF THE
SOLDER BALLS.
3. A1 BALL PAD CORNER I.D. TO BE
MARKED BY INK.
2. SEATING PLANE - Z
SD
SE
e
K TYP
J TYP
e
A1 BALL PAD
CORNER
Stock No. 23105-07 2/03
10
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N04L163WC1A
Ordering Information
2001 - 2002 Nanoamp Solutions, Inc. All rights reserved.
NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice.
NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration pur-
poses only and they vary depending upon specific applications.
NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application
or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp
product may be expected to result in significant injury or death, including life support systems and critical medical instruments.
Revision History
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