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Электронный компонент: N04T0830C1AXX-XXI

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NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
N04T0830C1A
Stock No. 23222-02 1/03
1
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
4Mb Ultra-Low Power Asynchronous CMOS SRAM
512Kx8 bit
Overview
The N04T0830C1A is an integrated memory
device containing a low power 4 Mbit SRAM built
using a self-refresh DRAM array organized as
524,288 words by 8 bits. It is designed to be
identical in operation and interface to standard 6T
SRAMS. The device is designed for low standby
and operating current and includes a power-down
feature to automatically enter standby mode. The
device operates with a single chip enable (CE)
control and output enable (OE) to allow for easy
memory expansion. The N04T0830C1A is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40
o
C to +85
o
C and is
available in JEDEC standard packages compatible
with other standard 512Kb x 8 SRAMs.
Features
Single Wide Power Supply Range
2.7 to 3.6 Volts
Very low standby current
35A at 3.0V (Max)
Very low operating current
2.0mA at 3.0V and 1s (Typical)
Simple memory control
Single Chip Enable (CE)
Output Enable (OE) for memory expansion
Very fast output enable access time
35ns OE access time
Automatic power down to standby mode
TTL compatible three-state output driver
Pin Configurations
Product Family
Part Number
Package
Type
Operating
Temperature
Power
Supply (Vcc)
Speed
Standby
Current (I
SB
),
Max @ 3.0V
Operating
Current (Icc),
Max
N04T0830C1AN
32-sTSOP1
-40
o
C to +85
o
C
2.7V - 3.6V
60/70ns
35
A
3 mA @ 1MHz
N04T0830C1ANR 32-sTSOP1 R
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A
11
A
9
A
8
A
13
WE
A
18
A
15
VCC
A
17
A
16
A
14
A
12
A
7
A
6
A
5
A
4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A
10
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
VSS
I/O
2
I/O
1
I/O
0
A
0
A
1
A
2
A
3
32 Pin
sTSOP1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A
4
A
5
A
6
A
7
A12
A14
A16
A17
VCC
A15
A18
WE
A
13
A
8
A9
A11
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A3
A2
A1
A0
I/O
0
I/O
1
I/O
2
VSS
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
CE
A
10
OE
32 Pin
Reverse
sTSOP1
Pin Descriptions
Pin Name
Pin Function
A
0
-A
18
Address Inputs
WE
Write Enable Input
CE
Chip Enable Input
OE
Output Enable Input
I/O
0
-I/O
7
Data Inputs/Outputs
V
CC
Power
V
SS
Ground
Stock No. 23222-02 1/03
2
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N04T0830C1A
Functional Block Diagram
Functional Description
CE
WE
OE
I/O
0
- I/O
7
MODE
POWER
H
X
X
High Z
Standby
1
1. When the device is in standby mode, control inputs (WE, OE), address inputs and data input/outputs
are internally isolated from any external influence and disabled from exerting any influence externally.
Standby
L
L
X
2
2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Data In
Write
Active
L
H
L
Data Out
Read
Active
L
H
H
High Z
Active
Active
Capacitance
1
1. These parameters are verified in device characterization and are not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input Capacitance
C
IN
V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C
8
pF
I/O Capacitance
C
I/O
V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C
8
pF
Address
Inputs
A0 - A18
512K
x 8 bit
RAM Array
Input/
Output
Mux
and
Buffers
Address
Decode
Logic
Control
Logic
CE
WE
OE
I/O0 - I/O7
Stock No. 23222-02 1/03
3
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N04T0830C1A
Absolute Maximum Ratings
1
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
V
IN,OUT
0.3 to V
CC
+0.3
V
Voltage on V
CC
Supply Relative to V
SS
V
CC
0.3 to 4.5
V
Power Dissipation
P
D
500
mW
Storage Temperature
T
STG
40 to 125
o
C
Operating Temperature
T
A
-40 to +85
o
C
Soldering Temperature and Time
T
SOLDER
240
o
C, 10sec(Lead only)
o
C
Operating Characteristics (Over Specified Temperature Range)
Item
Symbol
Test Conditions
Min.
Typ
1
1. Typical values are measured at Vcc=Vcc Typ., T
A
=25C and not 100% tested.
Max
Unit
Supply Voltage
V
CC
2.7
3.0
3.6
V
Input High Voltage
V
IH
2.2
V
CC
+0.3
V
Input Low Voltage
V
IL
0.3
0.6
V
Output High Voltage
V
OH
I
OH
= -1mA
V
CC
0.4
V
Output Low Voltage
V
OL
I
OL
= 2mA
0.4
V
Input Leakage Current
I
LI
V
IN
= 0 to V
CC
1
A
Output Leakage Current
I
LO
OE = V
IH
or Chip Disabled
1
A
Read/Write Operating Supply Current
@ 1
s Cycle Time
2
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
I
CC1
V
CC
=3.6 V, V
IN
=V
IH
or V
IL
Chip Enabled, I
OUT
= 0
2.0
3.0
mA
Read/Write Operating Supply Current
@ 70 ns Cycle Time
2
I
CC2
V
CC
=3.6 V, V
IN
=V
IH
or V
IL
Chip Enabled, I
OUT
= 0
12.0
25.0
mA
Maximum Standby Current
I
SB1
V
IN
= V
CC
or 0V
Chip Disabled
t
A
= 85
o
C, V
CC
= 3.0 V
35.0
A
Maximum Standby Current
I
SB2
V
IN
= V
CC
or 0V
Chip Disabled
t
A
= 85
o
C, V
CC
= 3.6 V
60.0
A
Stock No. 23222-02 1/03
4
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N04T0830C1A
Timing Test Conditions
Output Load Circuit
Item
Input Pulse Level
0.1V
CC
to 0.9 V
CC
Input Rise and Fall Time
5ns
Input and Output Timing Reference Levels
0.5 V
CC
Operating Temperature
-40
o
C to +85
o
C
V
CC
30 pF
I/O
14.5K
14.5K
Output Load
Stock No. 23222-02 1/03
5
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N04T0830C1A
Timing
Item
Symbol
-60
-70
Units
Min.
Max.
Read Cycle Time
t
RC
60
70
ns
Address Access Time
t
AA
60
70
ns
Chip Enable to Valid Output
t
CO
60
70
ns
Output Enable to Valid Output
t
OE
30
35
ns
Chip Enable to Low-Z output
t
LZ
5
5
ns
Output Enable to Low-Z Output
t
OLZ
5
5
ns
Chip Disable to High-Z Output
t
HZ
0
25
0
25
ns
Output Disable to High-Z Output
t
OHZ
0
25
0
25
ns
Output Hold from Address Change
t
OH
10
10
ns
Write Cycle Time
t
WC
60
70
ns
Chip Enable to End of Write
t
CW
55
55
ns
Address Valid to End of Write
t
AW
55
55
ns
Write Pulse Width
t
WP
55
55
ns
Address Setup Time
t
AS
0
0
ns
Write Recovery Time
t
WR
0
0
ns
Write to High-Z Output
t
WHZ
25
25
ns
Data to Write Time Overlap
t
DW
25
25
ns
Data Hold from Write Time
t
DH
0
0
ns
End Write to Low-Z Output
t
OW
5
5
ns