ChipFind - документация

Электронный компонент: N08T1630C1B

Скачать:  PDF   ZIP
NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
N08T1630CxB
Stock No. 23190-05 4/03
1
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
8Mb Ultra-Low Power Asynchronous CMOS SRAM
512Kx16 bit
Overview
The N08T1630CxB is an integrated memory
device containing a low power 8 Mbit SRAM built
using a self-refresh DRAM array organized as
512,288 words by 16 bits. It is designed to be
identical in operation and interface to standard 6T
SRAMS. The device is designed for low standby
and operating current and includes a power-down
feature to automatically enter standby mode. The
device operates with two chip enable (CE1 and
CE2) controls and output enable (OE) to allow for
easy memory expansion. Byte controls (UB and
LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N08T1630CxB is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40
o
C to +85
o
C and is
available in JEDEC standard BGA and TSOP2
packages compatible with other standard 512Kb x
16 SRAMs.
Features
Single Wide Power Supply Range
2.7 to 3.6 Volts
Very low standby current
50A at 3.0V (Max)
Very low operating current
2.0mA at 3.0V and 1s (Typical)
Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
Very fast access time
55ns address access option
35ns OE access time
Automatic power down to standby mode
TTL compatible three-state output driver
Compact space saving BGA package
available
Pin Configuration (Top View)
Product Family
Part Number
Package
Type
Operating
Temperature
Power
Supply (Vcc)
Speed
Standby
Current (I
SB
),
Max @ 3.0V
Operating
Current (Icc),
Max
N08T1630C2BZ
48 - BGA
-40
o
C to +85
o
C
2.7V - 3.6V
55/70ns @
2.7V
50
A
3 mA @ 1MHz
N08T1630C1BT
44- TSOP2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A
4
A
3
A
2
A
1
A
0
CE
I/O
0
I/O
1
I/O
2
I/O
3
VCC
VSS
I/O
4
I/O
5
I/O
6
I/O
7
WE
A
18
A
17
A
16
A
15
A
14
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
5
A
6
A
7
OE
UB
LB
I/O
15
I/O
14
I/O
13
I/O
12
VSS
VCC
I/O
11
I/O
10
I/O
9
I/O
8
A
8
A
9
A
910
A
11
A
12
A
13
44 Pin
TSOP2
1
2
3
4
5
6
A
LB
OE
A
0
A
1
A
2
CE2
B
I/O
8
UB
A
3
A
4
CE1
I/O
0
C
I/O
9
I/O
10
A
5
A
6
I/O
1
I/O
2
D
V
SS
I/O
11
A
17
A
7
I/O
3
V
CC
E
V
CC
I/O
12
V
SS
A
16
I/O
4
V
SS
F
I/O
14
I/O
13
A
14
A
15
I/O
5
I/O
6
G
I/O
15
NC
A
12
A
13
WE
I/O
7
H
A
18
A
8
A
9
A
10
A
11
NC
48 Ball BGA
6 x 8 mm
Pin Descriptions
Pin Name
Pin Function
A
0
-A
18
Address Inputs
WE
Write Enable Input
CE1
Chip Enable 1 Input
CE2
Chip Enable 2 Input (BGA only)
OE
Output Enable Input
LB
Lower Byte Enable Input
UB
Upper Byte Enable Input
I/O
0
-I/O
15
Data Inputs/Outputs
V
CC
Power
V
SS
Ground
NC
Not Connected
Stock No. 23190-05 4/03
2
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N08T1630CxB
Functional Block Diagram
Functional Description
CE1
CE2
1
1. CE2 only applies to BGA package.
WE
OE
UB
LB
I/O
0
- I/O
15
2
2. When UB and LB are in select mode (low), I/O
0
- I/O
15
are affected as shown. When LB only is in the select mode only I/O
0
- I/O
7
are affected as shown. When UB is in the select mode only I/O
8
- I/O
15
are affected as shown.
MODE
POWER
H
X
X
X
X
X
High Z
Standby
3
3. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
Standby
X
L
X
X
X
X
High Z
Standby
3
Standby
L
H
X
X
H
H
High Z
Standby
3
Standby
L
H
L
X
4
4. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
L
2
L
2
Data In
Write
Active
L
H
H
L
L
2
L
2
Data Out
Read
Active
L
H
H
H
L
2
L
2
High Z
Active
Active
Capacitance
1
1. These parameters are verified in device characterization and are not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input Capacitance
C
IN
V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C
8
pF
I/O Capacitance
C
I/O
V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C
8
pF
Address
Inputs
A0 - A18
512K
x 16 bit
RAM Array
Input/
Output
Mux
and
Buffers
Address
Decode
Logic
Control
Logic
CE1
CE2
WE
OE
UB
LB
I/O0 - I/O7
I/O8 - I/O15
Stock No. 23190-05 4/03
3
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N08T1630CxB
Absolute Maximum Ratings
1
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
V
IN,OUT
0.3 to V
CC
+0.3
V
Voltage on V
CC
Supply Relative to V
SS
V
CC
0.3 to 4.5
V
Power Dissipation
P
D
500
mW
Storage Temperature
T
STG
40 to 125
o
C
Operating Temperature
T
A
-40 to +85
o
C
Soldering Temperature and Time
T
SOLDER
240
o
C, 10sec(Lead only)
o
C
Operating Characteristics (Over Specified Temperature Range)
Item
Symbol
Test Conditions
Min.
Typ
1
1. Typical values are measured at Vcc=Vcc Typ., T
A
=25C and not 100% tested.
Max
Unit
Supply Voltage
V
CC
2.7
3.0
3.6
V
Input High Voltage
V
IH
2.2
V
CC
+0.3
V
Input Low Voltage
V
IL
0.3
0.6
V
Output High Voltage
V
OH
I
OH
= 0.2mA
V
CC
0.2
V
Output Low Voltage
V
OL
I
OL
= -0.2mA
0.2
V
Input Leakage Current
I
LI
V
IN
= 0 to V
CC
0.5
A
Output Leakage Current
I
LO
OE = V
IH
or Chip Disabled
0.5
A
Read/Write Operating Supply Current
@ 1
s Cycle Time
2
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
I
CC1
V
CC
=3.6 V, V
IN
=V
IH
or V
IL
Chip Enabled, I
OUT
= 0
3.0
5.0
mA
Read/Write Operating Supply Current
@ 70 ns Cycle Time
2
I
CC2
V
CC
=3.6 V, V
IN
=V
IH
or V
IL
Chip Enabled, I
OUT
= 0
12.0
25.0
mA
Maximum Standby Current
I
SB1
V
IN
= V
CC
or 0V
Chip Disabled
t
A
= 85
o
C, V
CC
= 3.0 V
50.0
A
Maximum Standby Current
I
SB2
V
IN
= V
CC
or 0V
Chip Disabled
t
A
= 85
o
C, V
CC
= 3.6 V
80.0
A
Stock No. 23190-05 4/03
4
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N08T1630CxB
Timing
Item
Symbol
-55
-70
Units
Min.
Max.
Min.
Max.
Read Cycle Time
t
RC
55
70
ns
Address Access Time
t
AA
55
70
ns
Chip Enable to Valid Output
t
CO
55
70
ns
Output Enable to Valid Output
t
OE
30
35
ns
Byte Select to Valid Output
t
LB
, t
UB
70
70
ns
Chip Enable to Low-Z output
t
LZ
5
5
ns
Output Enable to Low-Z Output
t
OLZ
5
5
ns
Byte Select to Low-Z Output
t
BLZ
5
5
ns
Chip Disable to High-Z Output
t
HZ
0
25
0
25
ns
Output Disable to High-Z Output
t
OHZ
0
25
0
25
ns
Byte Select Disable to High-Z Output
t
BHZ
0
0
25
ns
Output Hold from Address Change
t
OH
10
10
ns
Write Cycle Time
t
WC
55
70
ns
Chip Enable to End of Write
t
CW
50
55
ns
Address Valid to End of Write
t
AW
50
55
ns
Byte Select to End of Write
t
BW
50
55
ns
Write Pulse Width
t
WP
50
55
ns
Address Setup Time
t
AS
0
0
ns
Write Recovery Time
t
WR
0
0
ns
Write to High-Z Output
t
WHZ
25
25
ns
Data to Write Time Overlap
t
DW
25
25
ns
Data Hold from Write Time
t
DH
0
0
ns
End Write to Low-Z Output
t
OW
5
5
ns
Stock No. 23190-05 4/03
5
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N08T1630CxB
Timing of Read Cycle (CE1 = OE = V
IL
, WE = CE2 = V
IH
)
Timing Waveform of Read Cycle (WE=V
IH
)
Address
Data Out
t
RC
t
AA
t
OH
Data Valid
Previous Data Valid
Address
LB, UB
OE
Data Valid
t
RC
t
AA
t
CO
t
HZ
t
OHZ
t
BHZ
t
OLZ
t
OE
t
LZ
High-Z
Data Out
t
LB,
t
UB
t
LBLZ,
t
UBLZ
CE1
CE2
Stock No. 23190-05 4/03
6
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N08T1630CxB
Timing Waveform of Write Cycle (WE control)
Timing Waveform of Write Cycle (CE1 Control)
Address
Data In
CE1
CE2
LB, UB
Data Valid
t
WC
t
AW
t
CW
t
WR
t
WHZ
t
DH
High-Z
WE
Data Out
High-Z
t
OW
t
AS
t
WP
t
DW
t
BW
Address
WE
Data Valid
t
WC
t
AW
t
CW
t
WR
t
DH
LB, UB
Data In
High-Z
t
AS
t
WP
t
LZ
t
DW
t
BW
Data Out
t
WHZ
CE1
(for CE2 Control, use
inverted signal)
Stock No. 23190-05 4/03
7
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N08T1630CxB
44-Lead TSOP II Package (T44)
Note:
1. All dimensions in inches (Millimeters)
2. Package dimensions exclude molding flash
18.410.10
10.160.10
SEE DETAIL B
1.20 Max
11.760.20
0.396
0.338
0.80mm REF
DETAIL B
0.80mm REF
0
o
-8
o
0.15
0.05
Stock No. 23190-05 4/03
8
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N08T1630CxB
Ball Grid Array Package
Dimensions (mm)
D
E
e = 0.75
BALL
MATRIX
TYPE
SD
SE
J
K
60.10
80.10
0.375
0.375
1.125
1.375
FULL
SIDE VIEW
TOP VIEW
BOTTOM VIEW
E
D
A1 BALL PAD
CORNER (3)
0.900.10
0.230.05
0.15
0.08
Z
Z
1. 0.300.05 DIA.
1. DIMENSION IS MEASURED AT THE
MAXIMUM SOLDER BALL DIAMETER.
PARALLEL TO PRIMARY Z.
2. PRIMARY DATUM Z AND SEATING
PLANE ARE DEFINED BY THE
SPHERICAL CROWNS OF THE
SOLDER BALLS.
3. A1 BALL PAD CORNER I.D. TO BE
MARKED BY INK.
2. SEATING PLANE - Z
SD
SE
e
K TYP
J TYP
e
A1 BALL PAD
CORNER
Stock No. 23190-05 4/03
9
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N08T1630CxB
Ordering Information
2002, 2003 Nanoamp Solutions, Inc. All rights reserved.
NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice.
NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration pur-
poses only and they vary depending upon specific applications.
NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application
or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp
product may be expected to result in significant injury or death, including life support systems and critical medical instruments.
Revision History
Revision
Date
Change Description
01
August 2002
Initial Preliminary Release
02
Sept 2002
Added TSOP option to ordering information
03
November 2002
Added 55ns sort
04
February 2003
Updated BGA package thickness from 1.2mm to 1.0mm
05
April 2003
Updated for dual CE in BGA only
N08T1630CXB X -XXI
Performance
55 = 55ns
70 = 70ns
Package
Z = 48-BGA
T = 44-TSOP2
1 = 1 CE (TSOP)
2 = 2 CE (BGA)
# CE