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Document No. D16121EJ3V0DS00 (3rd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1648,1648-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
c
2002
The mark shows major revised points.
The 2SA1648 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
FEATURES
Available for high-current control in small dimension
Z type is a lead processed product and is deal for mounting a
hybrid IC.
Mold package that does not require an insulating board or
insulation bushing
Low collector saturation voltage:
V
CE(sat)1
=
-0.3 V MAX. (I
C
=
-3.0 A)
Fast switching speed:
t
f
= 0.3
s MAX. (I
C
=
-3.0 A)
High DC current gain and excellent linearity
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Parameter Symbol
Ratings
Unit
Collector to base voltage
V
CBO
-100 V
Collector to emitter voltage
V
CEO
-60 V
Emitter to base voltage
V
EBO
-7.0 V
Collector current (DC)
I
C(DC)
-5.0 A
Collector current (pulse)
I
C(pulse)
Note 1
-10 A
Base current (DC)
I
B(DC)
-2.5 A
Total power dissipation (Tc = 25
C) P
T
18
W
Total power dissipation (Ta = 25
C) P
T
1.0
Note 2
, 2.0
Note 3
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
PACKAGE DRAWINGS (Unit: mm)
2
1
3
6.5 0.2
5.0 0.2
4
1.5
-
0.1
+0.2
5.5 0.2
7.0 MIN.
13.7 MIN.
2.3
2.3
0.75
0.5 0.1
2.3 0.2
1.6 0.2
1.1 0.2
0.5
-0.1
+0.2
0.5
-0.1
+0.2
1
2
3
4
6.50.2
5.00.2
4.3 MAX.
0.8
2.3 2.3
0.9
MAX.
5.50.2
10.0 MAX.
2.0 MIN.
1.5-
0.1
+0.2
2.30.2
0.50.1
0.8
MAX.
0.8
1.0 MIN.
1.8TYP.
0.7
1.10.2
TO-252 (MP3Z)
ELECTRODE CONNECTION
1. Base
2. Collector
3. Emitter
4. Collector (Fin)
Notes 1. PW
300
s, Duty Cycle
10%
2. Printing board mounted
3. 7.5
mm
2
0.7 mm ceramic board mounted
TO-251 (MP-3)
Data Sheet D16121EJ3V0DS
2
2SA1648,1648-Z
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
Parameter Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
V
CEO(SUS)
I
C
=
-3.0 A, I
B
=
-0.3 A, L = 1 mH
-60 V
Collector to emitter voltage
V
CEX(SUS)
I
C
=
-3.0 A, I
B2
=
-I
B1
=
-0.3 A,
V
BE(OFF)
= 1.5 V, L = 180
H, clamped
-60 V
Collector cutoff current
I
CBO
V
CE
=
-60 V, I
E
= 0 A
-10
A
Collector cutoff current
I
CER
V
CE
=
-60 V, R
BE
= 50
, T
A
= 125
C -1.0 mA
Collector cutoff current
I
CEX1
V
CE
=
-60 V, V
BE(OFF)
= 1.5 V
-10
A
Collector cutoff current
I
CEX2
V
CE
=
-60 V, V
BE(OFF)
= 1.5 V,
T
A
= 125
C
-1.0 mA
Emitter cutoff current
I
EBO
V
EB
=
-5.0 V, I
C
= 0 A
-10
A
DC current gain
h
FE1
Note
V
CE
=
-2.0 V, I
C
=
-0.5 A
100
DC current gain
h
FE2
Note
V
CE
=
-2.0 V, I
C
=
-1.0
A
100 200 400
DC current gain
h
FE3
Note
V
CE
=
-2.0 V, I
C
=
-3.0 A
60
Collector saturation voltage
V
CE(sat)1
Note
I
C
=
-3.0 A, I
B
=
-0.15 A
-0.3 V
Collector saturation voltage
V
CE(sat)2
Note
I
C
=
-4.0 A, I
B
=
-0.2 A
-0.5 V
Base saturation voltage
V
BE(sat)1
Note
I
C
=
-3.0 A, I
B
=
-0.15 A
-1.2 V
Base saturation voltage
V
BE(sat)2
Note
I
C
=
-4.0 A, I
B
=
-0.2 A
-1.5 V
Collector capacitance
C
ob
V
CB
=
-10 V, I
E
= 0 A, f = 1.0 MHz
80
pF
Gain bandwidth product
f
T
V
CE
=
-10 V, I
C
= 0.5 A
90
MHz
Turn-on time
t
on
0.3
s
Storage time
t
stg
1.5
s
Fall time
t
f
I
C
=
-3.0 A, R
L
= 17
,
I
B1
=
-I
B2
=
-0.15 A, V
CC
-50 V
Refer to SWITCHING TIME TEST
CIRCUIT.
0.3
s
Note Pulse test PW
350
s, Duty Cycle
2%/Pulsed
h
FE
CLASSIFICATION
Marking M
L
K
h
FE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME TEST CIRCUIT
Base current
waveform
Collector current
waveform
Data Sheet D16121EJ3V0DS
3
2SA1648,1648-Z
TYPICAL CHARACTERISTICS (T
A
= 25
C)
T
o
t
a
l
P
o
w
e
r Di
ss
i
pat
i
o
n
P
T
(W
)
Case Temperature T
C
(
C)
I
C
Derat
i
ng
dT
(%
)
Case Temperature T
C
(
C)
Trans
i
ent
Ther
m
a
l
Res
i
s
t
an
c
e
r
th
(
j
-
c)
(
C/
W
)
Pulse Width PW (s)
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Col
l
e
c
t
or Current
I
C
(A
)
Col
l
e
c
t
or Current
I
C
(A
)
Single pulse
Single pulse
Collector Current I
C
(A)
DC Current
Gai
n
h
FE
Pulse test
T
C
= 25
C
T
C
= 25
C
R
th(j
-A)
= 125
C/W
R
th(j
-C)
= 6.94
C/W
Data Sheet D16121EJ3V0DS
4
2SA1648,1648-Z
Collector Current I
C
(A)
Collector Current I
C
(A)
Collector Current I
C
(A)
B
a
s
e
S
a
t
u
ra
t
i
on V
o
l
t
age
V
BE(s
a
t
)
(
V
)
Col
l
e
c
t
or S
a
t
u
ra
t
i
on V
o
l
t
age V
CE
(
s
at
)
(V
)
Gai
n
B
andw
i
d
t
h
P
r
odu
c
t
f
T
(M
Hz)
S
t
orageTi
m
e
t
st
g
(
s)
Fa
ll T
i
m
e
t
f
(
s)
Pulse test
Collector to Base Voltage V
CB
(V)
Col
l
e
c
t
or Capa
c
i
t
a
n
c
e
C
ob
(pF
)
Col
l
e
c
t
or Current
I
C
(A
)
Collector to Emitter Voltage V
CE
(V)
I
C
= 20 A
I
B
T
C
= 25
C
I
E
= 0 A
I
C
= 20 A
I
B1
=
-20 A I
B2
2SA1648,1648-Z
The information in this document is current as of August, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1
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