Document No. D14857EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
DARLINGTON POWER TRANSISTOR
2SA1720
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1720 is a high-speed Darlington power transistor.
This transistor is ideal for high-precision control such as PWM
control for pulse motors or brushless motors in OA and FA equipment.
FEATURES
Mold package that does not require an insulating board or insulation
bushing
On-chip C-to-E reverse diode
Fast switching speed
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
-100
V
Collector to emitter voltage
V
CEO
-100
V
Emitter to base voltage
V
EBO
-8.0
V
Collector current (DC)
I
C(DC)
-10, +3.0
A
Collector current (pulse)
I
C(pulse)
PW
10 ms,
duty cycle
50%
+20
A
Base current (DC)
I
B(DC)
-1.0
A
T
C
= 25
C
25
W
Total power dissipation
P
T
T
A
= 25
C
2.0
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
ORDERING INFORMATION
Part No.
Package
2SA1720
Isolated TO-220
EQUIVALENT CIRCUIT
1. Base
2. Collector
3. Emitter
Data Sheet D14857EJ2V0DS
2
2SA1720
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
-100 V, I
E
= 0 A
-10
A
DC current gain
h
FE1
V
CE
=
-2.0 V, I
C
=
-5.0 A
Note
4,000
20,000
DC current gain
h
FE2
V
CE
=
-2.0 V, I
C
=
-10 A
Note
500
Collector saturation voltage
V
CE(sat)
I
C
=
-5.0 A, I
B
=
-5.0 mA
Note
-0.9
-1.5
V
Base saturation voltage
V
BE(sat)
I
C
=
-5.0 A, I
B
=
-5.0 mA
Note
-1.5
-2.0
V
Gain bandwidth product
f
T
V
CE
=
-5.0 V, I
C
=
-5.0 A
100
MHz
Turn-on time
t
on
0.2
s
Storage time
t
stg
1.5
s
Fall time
t
f
I
C
= 5.0 A, R
L
= 10
,
I
B1
=
-I
B2
=
-5 mA, V
CC
-50 V
Refer to the switching time (t
on
, t
stg
, t
f
) test
circuit.
0.7
s
1RWH Pulse test PW 350
s, duty cycle 2%
h
FE
CLASSIFICATION
Marking
L
K
h
FE1
4,000 to 10,000
8,000 to 20,000
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
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Data Sheet D14857EJ2V0DS
3
2SA1720
TYPICAL CHARACTERISTICS (T
A
= 25
C)
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