1998
Document No. D15591EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1843
PNP SILICON EPITAXIAL POWER TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SA1843 is a power transistor developed for high-speed switching and features a high h
FE
at low V
CE(sat)
.
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
Auto-mounting possible in radial taping specifications
Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions
High h
FE
and low V
CE(sat)
:
V
CE(sat)
-0.3 V @I
C
=
-3.0 A, I
B
=
-0.15 A
h
FE
100
@V
CE
=
-2.0 V, I
C
=
-1.0 A
Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25
C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
-100
V
Collector to emitter voltage
V
CEO
-60
V
Emitter to base voltage
V
EBO
-7.0
V
Collector current (DC)
I
C(DC)
-5.0
A
Collector current (pulse)
I
C(pulse)
PW
300
s, duty cycle 2%
-10
A
Base current (DC)
I
B(DC)
-2.5
A
Total power dissipation
P
T
Ta = 25
C
1.8
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Data Sheet D15591EJ2V0DS
2
2SA1843
ELECTRICAL CHARACTERISTICS (Ta = 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
-60 V, I
E
= 0
-10
A
Collector cutoff current
I
CER
V
CE
=
-60 V, R
EB
= 50
Ta = 125
C
-1.0
mA
Collector cutoff current
I
CEX1
V
CE
=
-60 V, V
BE(off)
= 1.5 V
-10
A
Collector cutoff current
I
CEX2
V
CE
=
-60 V, V
BE(off)
= 1.5 V
Ta = 125
C
-1.0
mA
Emitter cutoff current
I
EBO
V
EB
=
-5.0 V, I
C
= 0
-10
A
DC current gain
h
FE1
*
V
CE
=
-2.0 V, I
C
=
-0.5 A
100
-
DC current gain
h
FE2
*
V
CE
=
-2.0 V, I
C
=
-1.0 A
100
400
-
DC current gain
h
FE3
*
V
CE
=
-2.0 V, I
C
=
-3.0 A
60
-
Collector saturation voltage
V
CE(sat)1
*
I
C
=
-3.0 A, I
B
=
-0.15 A
-0.3
V
Collector saturation voltage
V
CE(sat)2
*
I
C
=
-4.0 A, I
B
=
-0.2 A
-0.5
V
Base saturation voltage
V
BE(sat)1
*
I
C
=
-3.0 A, I
B
=
-0.15 A
-1.2
V
Base saturation voltage
V
BE(sat)2
*
I
C
=
-4.0 A, I
B
=
-0.2 A
-1.5
V
Gain bandwidth product
f
T
V
CE
=
-10 V, I
C
=
-0.5 A
80
MHz
Collector capacitance
C
ob
V
CB
=
-10 V, I
E
= 0, f = 1 MHz
130
pF
Turn-on time
t
on
0.15
s
Storage time
t
stg
1.0
s
Fall time
t
f
I
C
=
-3.0 A
I
B1
=
-I
B2
=
-0.15 A
R
L
= 17
, V
CC
=
-50 V
0.1
s
* Pulse test PW
350
s, duty cycle 2%
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE
100 to 200
150 to 300
200 to 400
PACKAGE DRAWING (UNIT: mm)
TAPING SPECIFICATION
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2SA1843
M8E 00. 4
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