1996
DATA SHEET
Silicon Power Transistor
2SA1988
DESCRIPTION
The 2SA1988 is PNP Silicon Power Transistor that
designed for audio frequency power amplifier.
FEATURES
High Voltage V
CEO
=
-
200 V
DC Current Gain h
FE
= 70 to 200
TO-3P Package
ORDERING INFORMATION
Type Number
Package
2SA1988
MP-88
PNP SILICON TRANSISTOR
POWER AMPLIFIER
INDUSTRIAL USE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
V
CBO
-
200
V
Collector to Emitter Voltage
V
CEO
-
200
V
Emitter to Base Voltage
V
EBO
-
5.0
V
Collector Current (DC)
I
C (DC)
-
7.0
A
Collector Current (pulse)
I
C (pulse)
*1
-10
A
Total Power Dissipantion
P
2
*2
100
W
JunctionTemperature
T
J
150
C
Storage Tempreature
T
stg
-
55 to +150
C
*1 PW
300
s, Duty Cycle
10 %
*2 T
C
= 25
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
-
50
A
V
CB
=
-
200 V, I
E
= 0
Emitter Cutoff Current
I
EBO
-
50
A
V
EB
=
-
3.0 V, I
C
= 0
DC Current Gain
h
FE1
70
200
-
V
CE
=
-
5.0 V, I
C
=
-
1.0 A
DC Current Gain
h
FE2
20
-
V
CE
=
-
5.0 V, I
C
=
-
3.5 A
Collector Saturation Voltage
V
CE (sat)
-
0.6
-
2.0
V
I
C
=
-
5.0 V, I
E
=
-
0.5 V
Base Saturation Voltage
V
BE (sat)
-
1.3
-
2.0
V
I
C
=
-
5.0 V, I
E
=
-
0.5 V
Gain Band width Product
f
T
40
MHz
V
CE
=
-
5.0 V, I
C
= 1.0 mA
Output Capacitance
C
ob
270
pF
V
CB
=
-
10 V, I
C
= 0, f = 1.0 MHz
Pulse Test PW
350
s, Duty Cycle
2 %
PACKAGE DIMENSIONS
The information in this document is subject to change without notice.
MP-88
1.Base
2.Collector
3.Emitter
4.Fin (Collector)
1
2
3
15.7 MAX.
3.20.2
4.50.2
5.0
1.0
3.4MAX.
20.5MAX.
19 MIN.
2.20.2
5.45
5.45
1.00.2
4
4.7 MAX.
1.5
2.80.1
0.60.1
Document No. D11176EJ1V0DS00 (1st edition)
Date Published May 1996 P
Printed in Japan
2
2SA1988
CHARACTERISTICS (T
A
= 25
C)
FORWARD BIAS SAFE OPERATING AREA
V
CE
- Collector to Emitter Voltage - V
I
C
- Collector Current - A
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
CE
- Collector to Emitter Voltage - V
I
C
- Collector Current - A
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature -
C
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature -
C
P
T
- Total Power Dissipation - W
0
20
0
50
100
150
20
40
60
80
100
40
60
80
100
120
140
160
140
120
100
80
60
40
20
-0.1
-1
-1
-10
-100
-10
-100
-1000
T
C
= 25
C
Single Pulse
0
-20
-30
-4
-6
-10
S/b Limited
Dissipation Limited
PW=1ms
Dissipation Limited
I
C(Pulse)
I
C(DC)
S/b Limited
-8
-10
-12
-2
20mA
40mA
60mA
80mA
100mA
I
B
=120mA
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance -
C/
W
0.01
100
1 m
10 m
100 m
1
10
100
1 000
100
10ms
100ms
200ms
Pulsed
10
1
0.1
Single Pulse
T
C
=25
C
R
th (J-C)
3
2SA1988
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
TEI-1202
Quality grade on NEC semiconductor devices
IEI-1209
Semiconductor device mounting technology manual
C10535E
Semoconductor device package manual
C10943X
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
COLLECTOR SATURATION VOLTAGE
AND
BASE SATURATION VOLTAGE
VS
COLLECTOR CURRENT
I
C -
Collector Current - A
0.01
0.01
0.1
1.0
10
0.1
1.0
10
T
A
= 150
C
75
C
25
C
-25
C
T
A
=-25
C
25
C
75
C
150
C
V
CE
- Collector Saturation voltage - V
V
BE
- Base Saturation Voltage - V
OUTOPUT CAPASITANCE
VS
COLLECTOR TO BASE VOLTAGE
V
CB -
Collector to Base Voltage -V
I
E
=0
f=1MHz
10
-0.1
100
1 000
-1.0
-10
-100
-1000
C
ob
- Output Cpacitance - pF
I
C
=10I
B
Pulsed
I
C
- Collector Current - A
-0.1
10
100
1 000
-1.0
-10
h
FE
- DC Current Gain
DC CURRENT GAIN
VS
COLLECTOR CURRENT
V
CE
=-5V
Pulsed
-0.01
T
A
= 150
C
75
C
25
C
-25
C
V
BE (sat)
V
CE (sat)
2SA1988
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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