1996
DATA SHEET
SILICON TRANSISTOR
2SC1927
DESCRIPTION
The 2SC1927 is an NPN silicon epitaxial dual transistor that
consists of two chips equivalent to the 2SC1275, and is designed for
differential amplifier and ultra-high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
V
CBO
30
V
Collector to Emitter Voltage
V
CEO
14
V
Emitter to Base Voltage
V
EBO
3.0
V
Collector Current
I
C
50
mA
Collector Dissipation
P
C
200
mW/unit
Total Power Dissipation
P
T
300
mW
Junction Temperature
T
j
200
C
Storage Temperature
T
stg
65 to +200
C
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CES
V
CE
= 15 V, R
BE
= 0
50
nA
Emitter Cut-off Current
I
EBO
V
EB
= 2.0 V, I
C
= 0
50
nA
DC Current Gain
h
FE
V
CE
= 10 V, I
C
= 10 mA
25
80
200
h
FE
Ratio
h
FE1
/h
FE2
V
CE
= 10 V, I
C
= 10 mA *
1
0.8
1.0
Difference of Base to Emitter Voltage
V
BE
V
CE
= 10 V, I
C
= 10 mA
30
mV
Gain Bandwidth Product
f
T
V
CE
= 10 V, I
C
= 10 mA *
2
1.5
2.0
GHz
Output Capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz *
3
1.1
1.5
pF
* 1. h
FE1
is the smaller h
FE
value of the 2 transistors.
2. Sampling check shall be done on a production lot base using a TO-18 packaged device (equivalent to the
2SC1275).
3. Measured with a 3-terminal bridge, terminals other than the collector and base of the device under test should
be connected to the guard terminal of the bridge.
Document No. P11671EJ1V0DS00 (1st edition)
Date Published July 1996 P
Printed in Japan
NPN SILICON EPITAXIAL DUAL TRANSISTOR
FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING
INDUSTRIAL USE
PACKAGE DIMENSIONS
(in millimeters)
5.0 MIN.
3.5
+0.3
0.2
5.0 MIN.
3
2
1
0.6
0.05
4
5
6
2.0 MAX.
0.1
+0.06 0.03
1.25
0.1
1.25
0.1
3
2C
4
1C
6
1B
1
2B
5
1E
2
2E
PIN CONNECTIONS
2SC1927
2
TYPICAL CHARACTERISTICS (T
A
= 25 C)
BASE AND COLLECTOR SATURATION
VOLTAGE vs. COLLECTOR CURRENT
I
C
= 10I
B
2
1
0.2
0.1
0.02
0.05
0.5
0.1 0.2
1
0.5
2
5
10 20
50
V
BE(sat)
V
CE(sat)
I
C
- Collector Current - mA
V
BE(sat)
- Base Saturation Voltage - V
V
CE(sat)
- Collector Saturation Voltage - V
h
FE
- DC Current Gain
200
100
50
70
5
7
10
20
30
0.2
0.5
1
50
30
10 20
7
2
5
0.1
0.7
3
V
CE
= 10 V
I
C
- Collector Current - mA
0
0.5 1
2 3
30
20
10
7
5
V
CB
- Collector to Base Voltage - V
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
3
2
1
0.3
0.5
0.7
C
ob
- Output Capacitance - pF
I
E
= 0
f = 1.0 MHz
0.6
0.7
0.8
0.9
50
20
10
5
2
1
0.5
V
CE
= 10 V
V
BE
- Base to Emitter Voltage - V
I
C
- Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR
CURRENT
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
0.2
0.5
1
50
30
10 20
7
2
5
0.1
0.7
3
I
C
- Collector Current - mA
f
T
- Gain Bandwidth Product - MHz
3000
2000
700
1000
50
70
100
500
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
300
200
V
CE
= 2.0 V
V
CE
= 5.0 V
0.3
0.3
2SC1927
3
[MEMO]
2
2SC1927
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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
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measures in its design, such as redundancy, fire-containment, and anti-failure features.
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"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
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they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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