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Document No. D14902EJ2V1DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC2334
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC2334 is a mold power transistor developed for high-speed
switching, and is ideal for use as a driver in devices such as switching
regulators, DC/DC converters, and high-frequency power amplifiers.
FEATURES
Low collector saturation voltage
Fast switching speed
Complementary transistor: 2SA1010
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Parameter Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
150
V
Collector to emitter voltage
V
CEO
100
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
7.0
A
Collector current (pulse)
I
C(pulse)
PW
300
s,
duty cycle
10%
15 A
Base current (DC)
I
B(DC)
3.5
A
T
C
= 25
C 40
W
Total power dissipation
P
T
T
A
= 25
C 1.5
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
ORDERING INFORMATION
Part No.
Package
2SC2334 TO-220AB
(TO-220AB)
Data Sheet D14902EJ2V1DS
2
2SC2334
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
Parameter Symbol
Conditions
MIN.
TYP.
MAX.
Unit
V
CEO(SUS)
I
C
= 5.0 A, I
B1
= 0.5 A, L = 1 mH
100
V
V
CEX(SUS)1
I
C
= 5.0 A, I
B1
=
-I
B2
= 0.5 A,
V
BE(OFF)
=
-5.0 V, L = 180
H, clamped
100 V
Collector to emitter voltage
V
CEX(SUS)2
I
C
= 10 A, I
B1
= 1.0 A, I
B2
=
-0.5 A,
V
BE(OFF)
=
-5.0 V, L = 180
H, clamped
100 V
I
CBO
V
CB
= 100 V, I
E
= 0 A
10
A
I
CER
V
CE
= 100 V, R
BE
= 51
, T
A
= 125
C
1.0
mA
I
CEX1
V
CE
= 100 V, V
BE(OFF)
=
-1.5 V
10
A
Collector cutoff current
I
CEX2
V
CE
= 100 V, V
BE(OFF)
=
-1.5 V,
T
A
= 125
C
1.0
mA
Emitter cutoff current
I
EBO
V
EB
= 5.0 V, I
C
= 0 A
10
A
h
FE1
V
CE
= 5.0 V, I
C
= 0.5 A
Note
40
h
FE2
V
CE
= 5.0 V, I
C
= 3.0 A
Note
40
200
DC current gain
h
FE3
V
CE
= 5.0 V, I
C
= 5.0 A
Note
20
Collector saturation voltage
V
CE(sat)
I
C
= 5.0 A, I
B
= 0.5 A
Note
0.6
V
Base saturation voltage
V
BE(sat)
I
C
= 5.0 A, I
B
= 0.5 A
Note
1.5
V
Turn-on time
t
on
0.5
s
Storage time
t
stg
1.5
s
Fall time
t
f
I
C
= 5.0 A, R
L
= 10
,
I
B1
=
-I
B2
=
-0.5 A, V
CC
50 V
Refer to the test circuit.
0.5
s
Note Pulse test PW
350
s, duty cycle
2%
h
FE
CLASSIFICATION
Marking M
L
K
h
FE2
40 to 80
60 to 120
100 to 200
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
Base current
waveform
Collector current
waveform
Data Sheet D14902EJ2V1DS
3
2SC2334
TYPICAL CHARACTERISTICS (T
A
= 25
C)
T
o
t
a
l
P
o
w
e
r Di
s
s
i
pa
t
i
on
P
T
(W)
Ambient Temperature T
A
(
C)
Collector to Emitter Voltage V
CE
(V)
Case Temperature T
C
(
C)
Derat
i
ng dT
(
%
)
Trans
i
ent
Therm
a
l
Res
i
s
t
an
c
e
r
t
h
(j
-c)
(
C/W)
Pulse Width PW (ms)
Col
l
e
c
t
or Current
I
C
(
A
)
2 mm aluminum board,
no insulating board,
grease coating, natural
air cooling
With infinite heatsink
Single pulse
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