DATA SHEET
SILICON TRANSISTOR
2SC3582
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. P10359EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
1984
DESCRIPTION
The 2SC3582 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. Low-
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This is achieved by direct nitride
passivated base surface process (DNP process) which is an NEC
proprietary new fabrication technique.
FEATURES
NF
1.2 dB TYP.
@f = 1.0 GHz
Ga
12 dB TYP.
@f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
10
V
Emitter to Base Voltage
V
EBO
1.5
V
Collector Current
I
C
65
mA
Total Power Dissipation
P
T
600
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
1.0
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EBO
1.0
A
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
50
100
250
V
CE
= 8 V, I
C
= 20 mA
Gain Bandwidth Product
f
T
8
GHz
V
CE
= 8 V, I
C
= 20 mA
Feed-Back Capacitance
C
re
0.4
0.9
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain
S
21e
2
9
11
dB
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
Maximum Available Gain
MAG
13
dB
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
Noise Figure
NF
1.2
2.5
dB
V
CE
= 8 V, I
E
= 7 mA, f = 1.0 GHz
h
FE
Classification
Class
K
Marking
K
h
FE
50 to 250
PACKAFE DIMENSIONS
in millimeters (inches)
5.2 MAX.
(0.204 MAX.)
0.5
(0.02)
2.54
(0.1)
1.
2.
3.
Base
Emitter
Collector
EIAJ
JEDEC
IEC
: SC-43B
: TO-92
: PA33
1.27
(0.05)
5.5 MAX.
(0.216 MAX.)
4.2 MAX.
(0.165 MAX.)
1.77 MAX.
(0.069 MAX.)
14 MIN.
(0.551 MIN.)
1
2
3
2
2SC3582
TYPICAL CHARACTERISTICS (T
A
= 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
1000
500
0
10
20
50
100
200
50
1
5
10
50
0.5
100
150
T
A
-Ambient Temperature-
C
I
C
-Collector Current-mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
P
T
-Total Power Dissipation-mW
h
FE
-DC Current Gain
V
CE
= 8 V
0
5
10
15
0.5
1
5
10
50 70
I
C
-Collector Current-mA
INSERTION GAIN vs.
COLLECTOR CURRENT
|S
21e
|
2
-Insertion Gain-dB
V
CE
= 8 V
f = 1.0 GHz
0.1
0.5
0.3
0.2
0.7
1
3
2
1
3
2
5
7
10
20
30
V
CB
-Collector to Base Voltage-V
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
C
re
-Feed-back Capacitance-pF
f = 1.0 MHz
0
12
8
4
16
20
0.1
0.3
0.2
0.5 70.
1.0
2.0
3.0
f-Frequency-GHz
INSERTION GAIN, MAXIMUM AVAILABLE
GAIN vs. FREQUENCY
MAG-Maximum Available Gain-dB
|S
21e
|
2
-Insetion Gain -dB
V
CE
= 8 V
I
C
= 20 mA
1
5
3
2
7
10
30
20
1
3
2
5
7
10
20
30
I
C
-Collector Current-mA
GAIN BANDWIDTH PRODUUT vs.
COLLECTOR CURRENT
f
T
-Gain Bandwidth Product-GHz
V
CE
= 8 V
Free air
|S
21e
|
2
MAG
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