1996
DATA SHEET
SILICON TRANSISTOR
2SC4187
DESCRIPTION
The 2SC4187 is designed primarily for use in low voltage and low
current application up to UHF band. The 2SC4187 is ideal for pagers,
electro-optic detector postamplifier applications, and other battery pow-
ered systems. Super mini mold package makes it suitable for use in small
type equipments such as HICs.
FEATURES
Low Noise : NF = 3.0 dB TYP. @V
CE
= 1 V, I
C
= 250
A, f = 1.0 GHz
High Gain : |S
21e
|
2
= 6.5 dB TYP. @V
CE
= 1 V, I
C
= 1 mA, f = 1.0 GHz
Small Package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
V
CBO
15
V
Collector to Emitter Voltage
V
CEO
8
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
5
mA
Total Power Dissipation
P
T
50
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
Characteristic
Symbol
MIN.
TYP.
MAX.
Unit
Test Conditions
Collector Cutoff Current
I
CBO
0.1
A
V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current
I
EBO
0.1
A
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
50
100
250
V
CE
= 1 V, I
C
= 250
A, pulsed
Gain Bandwidth Product
f
T
4.0
GHz
V
CE
= 1 V, I
C
= 1 mA, f = 1 GHz
Feedback Capacitance
C
re
0.5
0.7
pF
V
CB
= 1 V, I
E
= 0, f = 1 MHz
Insertion Power Gain
|S
21e
|
2
4.0
6.5
dB
V
CE
= 1 V, I
E
= 1 mA, f = 1 GHz
Noise Figure
NF
3.0
4.5
dB
V
CE
= 1 V, I
C
= 250
A, f = 1 GHz
h
FE
Classification
Class
R6A
R6B
R6C
Marking
R6A
R6B
R6C
h
FE
50 to 100
80 to 160
125 to 250
PRECAUTION
Avoid high static voltages or electric fields so that this device would not suffer any damage due to those voltages or fields.
PACKAGE DIMENSIONS
in millimeters
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
2.1 0.1
1.25 0.1
2
1
3
2.0 0.2
0.3
+0.1
0
0.65
0.65
0.3
+0.1
0
0.15
+0.1
0.05
0 to 0.1
0.3
0.9 0.1
Marking
1. Emitter
2. Base
3. Collector
Document No. P10370EJ3V0DS00 (3rd edition)
Date Published February 1996 P
Printed in Japan
2SC4187
2
TYPICAL CHARACTERISTICS (T
A
= 25 C)
10
8
6
4
2
1
0.1
1
10
I
C
Collector Current mA
V
CE
= 1 V
f
T
Gain Bandwidth Product GHz
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
5
0
0.1
1
10
f Frequency GHz
V
CE
= 1 V
I
C
= 1 mA
|S
21e
|
2
Insertion Power Gain dB
INSERTION POWER GAIN vs. FREQUENCY
40
20
0
0.1
1.0
10
MAG Maximum Available Gain dB
MAXIMUM AVAILABLE GAIN vs. FREQUENCY
V
CE
= 1 V
I
C
= 1 mA
MAXIMUM AVAILABLE GAIN AND INSERTION
POWER GAIN vs. COLLECTOR CURRENT
V
CE
= 1 V
f = 1.0 GHz
10
5
0
0.1
1
10
I
C
Collector Current mA
20
10
0
NOISE FIGURE AND POWER GAIN AT OPTIMUM NF
vs. COLLECTOR CURRENT
V
CE
= 1 V
f = 1.0 GHz
10
5
0
0.1
1
10
I
C
Collector Current mA
Ga Associated Gain dB
NF Noise Figure dB
G
a
NF
200
150
100
50
0
50
100
150
Free Air
T
A
Ambient Temperature C
P
T
Total Power Dissipation mW
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
f Frequency GHz
|S
21e
|
2
Insertion Power Gain dB
MAG Maximum Available Gain dB
PDF 
ZIP
