1993
DATA SHEET
SILICON TRANSISTOR
Document No. P10372EJ2V0DS00 (2nd edition)
(Previous No. TC-2404)
Date Published July 1995 P
Printed in Japan
2SC4228
DESCRIPTION
The 2SC4228 is a low supply voltage transistor designed for VHF,
UHF low noise amplifier.
It is suitable for a high density surface mount assembly since the
transistor has been applied super mini mold package.
This is achieved by direct nitride passivated base surface process
(NESAT
TM
process) which is an NEC proprietary fabrication technique.
FEATURES
High f
T
: 8.0 GHz TYP. (@ V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz)
Low C
re
: 0.3 pF TYP. (@ V
CB
= 3 V, I
E
= 0, f = 1 MHz)
High |S
21e
|
2
: 7.5 dB TYP. (@ V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz)
Super Mini Mold Package. (EIAJ: SC-70)
ORDERING INFORMATION
PART
QUANTITY
PACKING STYLE
NUMBER
2SC4228-T1
3 kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side
of the tape.
2SC4228-T2
3 kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Emitter), Pin2 (Base) face to
perforation side of the tape.
*
Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4228)
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
1.25 0.1
2.1 0.1
2.0 0.2
0.3
0
+0.1
0.65
0.65
0.3
0
+0.1
2
1
3
0.9 0.1
0.3
0.15
0.05
+0.1
0 to 0.1
Marking
PACKAGE DIMENSIONS
in millimeters
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2SC4228
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
10
V
Emitter to Base Voltage
V
EBO
1.5
V
Collector Current
I
C
35
mA
Total Power Dissipation
P
T
150
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
1.0
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EBO
1.0
A
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
50
100
250
V
CE
= 3 V, I
C
= 5 mA*
1
Gain Bandwidth Product
f
T
5.5
8.0
GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
Feedback Capacitance
C
re
0.3
0.7
pF
V
CB
= 3 V, I
E
= 0, f = 1 MHz*
2
Insertion Power Gain
|S
21e
|
2
5.5
7.5
dB
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
Noise Figure
NF
1.9
3.2
dB
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
*1 Pulse Measurement; PW
350
s, Duty Cycle
2 %
*2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance
bridge.
h
FE
Classification
Rank
R43
R44
R45
Marking
R43
R44
R45
h
FE
50 to 100
80 to 160
125 to 250
2SC4228
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
100
0
5
0
50
100
150
200
0.5
1.0
10
15
20
160 A
140 A
120 A
100 A
80 A
60 A
40 A
I
B
= 20 A
10
0.5
0
0.5
1.0
10
20
1
5
10
50
20
50
100
200
V
CE
= 3 V
V
CE
= 3 V
0.1
1
0
0.5
2
5
10
20
50
0.2
0.5
1.0
2.0
5.0
1
5
10
50
2
4
6
8
10
f = 1 MHz
V
CE
= 3 V
f = 2 GHz
25
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
P
T
Total Power Dissipation mW
I
C
Collector Current mA
I
C
Collector Current mA
h
FE
DC Current Gain
C
re
Feed-back Capacitance pF
f
T
Gain Bandwidth Product GHz
T
A
Ambient Temperature C
V
CE
Collector to Emitter Voltage V
V
BE
Base to Emitter Voltage V
I
C
Collector Current mA
V
CB
Collector to Base Voltage V
I
C
Collector Current mA
Free Air
2SC4228
4
0
0.5
0
0.5
1
5
10
50
4
8
12
0.1
1.0
0.5
5.0
0
5
10
15
20
25
1
5
10
50
1
2
3
4
5
V
CE
= 3 V
f = 2 GHz
V
CE
= 3 V
I
C
= 5 mA
V
CE
= 3 V
f = 2 GHz
|S
21e
|
2
Insertion Power Gain dB
I
C
Collector Current mA
f Frequency GHz
|S
21e
|
2
Insertion Power Gain dB
I
C
Collector Current mA
NF Noise Figure dB
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
INSERTION POWER GAIN vs.
FREQUENCY
NOISE FIGURE vs.
COLLECTOR CURRENT