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SILICON POWER TRANSISTOR
2SC4336
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
Document No. D17261EJ1V0DS00 (1st edition)
Date Published July 2004 NS CP(K)
Printed in Japan
2004
DESCRIPTION
The 2SC4336 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation. This transistor is ideal for use in switching power
supplies, DC/DC converters, motor drivers, solenoid drivers, and
other low-voltage power supply devices, as well as for high-current
switching.
FEATURES
Mold package that does not require an insulating board or
insulation bushing
Fast switching speed
Low collector-to-emitter saturation voltage
V
CE(sat)
0.3 V MAX. (I
C
= 6.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SC4336 Isolated
TO-220
(MP-45)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Collector to base voltage
V
CBO
100 V
Collector to emitter voltage
V
CEO
100 V
Emitter to base voltage
V
EBO
7.0 V
Collector current (DC)
I
C(DC)
10 A
Collector current (pulse)
Note
I
C(pulse)
20 A
Base current (DC)
I
B(DC)
6.0 A
Total power dissipation (T
C
= 25
C) P
T
30 W
Total power dissipation (T
A
= 25
C) P
T
2.0
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Note PW
300
s, Duty Cycle
10%
PACKAGE DRAWING (Unit: mm)
10.5 MAX.
7 0.2
3.2 0.2
3.0 MAX.
1.3 0.2
0.8 0.1
2.54 TYP.
2.54 TYP.
1.5 0.2
5 0.2
13.5 MIN.
12 0.2
5
0.1
17 0.2
2.8 0.2
4.7 MAX.
2.5 0.1
0.5 0.1
1 2 3
1: Base
2: Collector
3: Emitter
Data Sheet D17261EJ1V0DS
2
2SC4336
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
Parameter Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to Emitter Voltage
V
CEO(SUS)
I
C
= 5.0 A, I
B
= 0.6 A, L = 1 mH
100
V
V
CEX(SUS)
I
C
= 5.0 A, I
B1
=
-I
B2
= 0.6 A,
V
BE(OFF)
=
-1.5 V,
L = 180
H, clamped
100 V
Collector Cut-off Current
I
CBO
V
CB
= 100 V, I
E
= 0
10
A
I
CER
V
CE
= 100 V, R
BE
= 50
, T
A
= 125
C 1.0 mA
I
CEX1
V
CE
= 100 V, V
BE(OFF)
=
-1.5 V
10
A
I
CEX2
V
CE
= 100 V, V
BE(OFF)
=
-1.5 V,
T
A
= 125
C
1.0
mA
Emitter Cut-off Current
I
EBO
V
EB
= 5.0 V, I
C
= 0
10
A
DC Current Gain
Note
h
FE1
V
CE
= 2.0 V, I
C
= 1.0 A
100
h
FE2
V
CE
= 2.0 V, I
C
= 2.0 A
100
200
400
h
FE3
V
CE
= 2.0 V, I
C
= 6.0 A
60
Collector Saturation Voltage
Note
V
CE(sat)1
I
C
= 6.0 A, I
B
= 0.3 A
0.3
V
V
CE(sat)2
I
C
= 8.0 A, I
B
= 0.4 A
0.5
V
Base Saturation Voltage
Note
V
BE(sat)1
I
C
= 6.0 A, I
B
= 0.3 A
1.2
V
V
BE(sat)2
I
C
= 8.0 A, I
B
= 0.4 A
1.5
V
Collector Capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
120
pF
Gain Bandwidth Product
f
T
V
CE
= 10 V, I
C
= 0.5 A
150
MHz
Turn-on Time
t
on
0.3
s
Storage Time
t
stg
1.5
s
Fall Time
t
f
I
C
= 6.0 A, R
L
= 8.3
,
I
B1
=
-I
B2
= 0.3 A, V
CC
50 V
Refer to the test circuit.
0.3
s
Note Pulsed: PW
350
s, Duty Cycle
2%
h
FE
CLASSIFICATION
Marking M
L
K
h
FE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
V
CC
50 V
R
L
= 8.3
I
B1
I
B2
I
C
I
C
T.U.T.
V
IN
PW
PW
50 s
V
BB
-5 V
Duty Cycle
2%
t
on
t
stg
t
f
90%
I
B1
I
B2
10%
Base current
waveform
Collector current
waveform
Data Sheet D17261EJ1V0DS
3
2SC4336
TYPICAL CHARACTERISTICS (T
A
= 25C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
DERATING CURVE OF SAFE OPERATING AREA
P
T
- Total Powe
r
Dissipation - W
0
5
10
15
20
25
30
0
25
50
75
100 125 150 175
T
C
- Case Temperature -
C
dT - Pe
rcentage
of Rated Powe
r -
%
0
20
40
60
80
100
0
25
50
75
100
125
150
S/b Limited
Dissipation Limited
T
C
- Case Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
C
- Collector Cu
r
r
ent - A
0.01
0.1
1
10
100
0.1
1
10
100
1000
I
C(pulse)
I
C(DC)
Single pulse
T
C
= 25C
1 ms
10 ms
200 ms
DC Dissipation Limited
V
CE
- Collector to Emittor Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
R
th
(j
-c)
- T
r
ansient Thermal Resistance -
C/W
0.1
1
10
100
1000
R
th(ch-A)
= 62.5C/W
R
th(ch-C)
= 4.17C/W
Single pulse
PW - Pulse Width - s
1 m
10 m
100 m
1
10
100
1000
Data Sheet D17261EJ1V0DS
4
2SC4336
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
I
C
- Collector Cu
r
r
ent - A
0
2
4
6
8
10
12
0
0.5
1
1.5
2
2.5
3
3.5
I
B
= 10 mA
20 mA
30 mA
50 mA
100 mA
V
CE
- Collector to Emittor Voltage - V
h
FE
- D
C
Cu
rrent
Gai
n
1
10
100
1000
0.001
0.01
0.1
1
10
100
V
CE
= 2.0 V
Pulsed
I
C
- Collector Current - A
COLLECTOR SATURATION VOLTAGE AND BASE
SATURATION VOLTAGE vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR
CURRENT
V
CE
-
Collector Saturation Voltag
e - mV
V
BE
- Base Sat
u
ration Voltage -
mV
1
10
100
1000
10000
0.01
0.1
1
10
100
I
C
= 10
I
B
Pulsed
V
BE(sat)
V
CE(sat)
I
C
- Collector Current - A
f
T
- Gain Band
width Product -
MHz
10
100
1000
0.01
0.1
1
10
V
CE
= 10 V
I
C
- Collector Current - A
COLLECTOR CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
TURN ON TIME, STORAGE TIME AND FALL TIME
vs. COLLECTOR CURRENT
C
ob
-
C
o
llector Capacitance - pF
10
100
1000
1
10
100
I
E
= 0
f = 1 MHz
V
CB
- Collector to Base Voltage - V
t
f
,
t
st
g
, t
on
- Fall Tim
e
, Turn-on Time a
nd Storage Time -
ns
10
100
1000
10000
0.1
1
10
100
I
C
= 20 A
I
B1
=
-20 I
B2
t
on
t
stg
t
f
I
C
- Collector Current - A
2SC4336
The information in this document is current as of July, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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