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confirm that this is the latest version.
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1998
Document No. D15598EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC4552
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC4552 is a power transistor developed for high-speed
switching and features low V
CE(sat)
and high h
FE
. This transistor is
ideal for use in drivers such as DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
High h
FE
and low V
CE(sat)
:
h
FE
100 (V
CE
= 2 V, I
C
= 3 A)
V
CE(sat)
0.3 V (I
C
= 8 A, I
B
= 0.4 A)
Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
60
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
15
A
Collector current (pulse)
I
C(pulse)
*
30
A
Base current (DC)
I
B(DC)
7.5
A
Total power dissipation
P
T
(Tc = 25
C)
30
W
Total power dissipation
P
T
(Ta = 25
C)
2.0
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
* PW
300
s, duty cycle 10%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
Data Sheet D15598EJ2V0DS
2
2SC4552
ELECTRICAL CHARACTERISTICS (Ta = 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
V
CEO(SUS)
I
C
= 8.0 A, I
B
= 0.8 A, L = 1 mH
60
V
Collector to emitter voltage
V
CEX(SUS)
I
C
= 8.0 A, I
B1
=
-I
B2
= 0.8 A,
V
BE(OFF)
=
-1.5 V, L = 180
H, clamped
60
V
Collector cutoff current
I
CBO
V
CB
= 60 V, I
E
= 0
10
A
Collector cutoff current
I
CER
V
CE
= 60 V, R
BE
= 50
, Ta = 125C
1.0
mA
Collector cutoff current
I
CEX1
V
CE
= 60 V, V
BE(OFF)
=
-1.5 V
10
A
Collector cutoff current
I
CEX2
V
CE
= 60 V, V
BE(OFF)
=
-1.5 V,
Ta = 125
C
1.0
mA
Emitter cutoff current
I
EBO
V
EB
= 5.0 V, I
C
= 0
10
A
DC current gain
h
FE1
*
V
CE
= 2.0 V, I
C
= 1.5 A
100
DC current gain
h
FE2
*
V
CE
= 2.0 V, I
C
= 3.0 A
100
400
DC current gain
h
FE3
*
V
CE
= 2.0 V, I
C
= 8.0 A
60
Collector saturation voltage
V
CE(sat)1
*
I
C
= 8.0 A, I
B
= 0.4 A
0.3
V
Collector saturation voltage
V
CE(sat)2
*
I
C
= 12 A, I
B
= 0.6 A
0.5
V
Base saturation voltage
V
BE(sat)1
*
I
C
= 8.0 A, I
B
= 0.4 A
1.2
V
Base saturation voltage
V
BE(sat)2
*
I
C
= 12 A, I
B
= 0.6 A
1.5
V
Collector capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
180
pF
Gain bandwidth product
f
T
V
CE
= 10 V, I
C
= 1.5 A
120
MHz
Turn-on time
t
on
0.3
s
Storage time
t
stg
1.5
s
Fall time
t
f
I
C
= 8.0 A, R
L
= 6.3
,
I
B1
=
-I
B2
= 0.4 A, V
CC
50 V
Refer to the test circuit.
0.3
s
* Pulse test PW
350
s, duty cycle 2%
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
%DVH FXUUHQW
ZDYHIRUP
&ROOHFWRU FXUUHQW
ZDYHIRUP
2SC4552
M8E 00. 4
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