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confirm that this is the latest version.
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1998
Document No. D14864EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD2161
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
The 2SD2161 is a Darlington power transistor that can directly drive
from the IC output. This transistor is ideal for motor drivers and
solenoid drivers in such as OA and FA equipment.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting cost.
FEATURES
High h
FE
due to Darlington connection
h
FE
2,000 (V
CE
= 2.0 V, I
C
= 2.0 A)
Full mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
100
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
5.0
A
Collector current (pulse)
I
C(pulse)
PW
300
s,
duty cycle
10%
10
A
Base current (DC)
I
B(DC)
0.5
A
T
C
= 25
C
20
W
Total power dissipation
P
T
T
A
= 25
C
2.0
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
ORDERING INFORMATION
Ordering Name
Package
2SD2161
Isolated TO-220
(Isolated TO-220)
INTERNAL EQUIVALENT CIRCUIT
1. Base
2. Collector
3. Emitter
2SD2161
M8E 00. 4
The information in this document is current as of July, 2001. The information is subject to change
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