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Электронный компонент: 2SD2164

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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998
Document No. D15606EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD2164
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
The 2SD2164 is a single power transistor developed especially
for high h
FE
. This transistor is ideal for simplifying drive circuits and
reducing power dissipation because its h
FE
is as high as that of
Darlington transistors, but it is a single transistor.
In addition, this transistor features a small resin insulated
package, thus contributing to high-density mounting and mounting
cost reduction.
FEATURES
High h
FE
and low V
CE(sat)
:
h
FE
1,300 TYP. (V
CE
= 5.0 V, I
C
= 0.5 A)
V
CE(SAT)
0.3 V TYP. (I
C
= 2.0 A, I
B
= 20 mA)
Full mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (T
A
= 25



C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
60
V
Collector to emitter voltage
V
CEO
60
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
3.0
A
Collector current (pulse)
I
C(pulse)
5.0
Note
A
Base current (DC)
I
B(DC)
0.5
A
Total power dissipation
P
T
(T
C
= 25
C)
20
W
Total power dissipation
P
T
(T
A
= 25
C)
2.0
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Note PW
300
s, duty cycle 10%
PACKAGE DRAWING (UNIT: mm)
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Data Sheet D15606EJ3V0DS
2
2SD2164
ELECTRICAL CHARACTERISTICS (T
A
= 25



C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 60 V, I
E
= 0 A
10
A
Emitter cutoff current
I
EBO
V
EB
= 7.0 V, I
C
= 0 A
10
A
DC current gain
h
FE1
V
CE
= 5.0 V, I
C
= 0.5 A
Note
800
1,300
3,200
DC current gain
h
FE2
V
CE
= 5.0 V, I
C
= 3.0 A
Note
500
1,000
Collector saturation voltage
V
CE(sat)
I
C
= 2.0 A, I
B
= 20 mA
Note
0.3
0.5
V
Base saturation voltage
V
BE(sat)
I
C
= 2.0 A, I
B
= 20 mA
Note
1.2
V
Gain bandwidth product
f
T
V
CE
= 5.0 V, I
C
= 0.1 A
110
MHz
Collector capacitance
C
ob
V
CB
= 10 V, I
E
= 0 A, f = 1.0 MHz
50
pF
1RWH Pulse test PW 350
s, duty cycle 2%
h
FE1
CLASSIFICATION
Marking
M
L
K
h
FE1
800 to 1,600
1,000 to 2,000
1,600 to 3,200
Data Sheet D15606EJ3V0DS
3
2SD2164
TYPICAL CHARACTERISTICS (T
A
= 25



C)
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Data Sheet D15606EJ3V0DS
5
2SD2164
[MEMO]
2SD2164
M8E 00. 4
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