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Электронный компонент: 2SD2217

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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998
Document No. D16140EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
DARLINGTON POWER TRANSISTOR
2SD2217
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
The 2SD2217 is a mold power transistor developed for low-
frequency power amplifiers and low-speed switching. This
transistor is ideal for direct driving from the IC out to drivers such as
pulse motor drivers and relay drivers in OA and FA equipment.
QUALITY GRADES
Standard
Please refer to "Quality Grades on NEC Semiconductor Devices"
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25



C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
300
V
Collector to emitter voltage
V
CEO
300
V
Emitter to base voltage
V
EBO
7
V
Collector current
I
C(DC)
300
mA
Collector current
I
C(pulse)
*
600
mA
Base current
I
B(DC)
30
mA
Total power dissipation
P
T
(Tc = 25
C)
25
W
Total power dissipation
P
T
(Ta = 25
C)
2.0
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
* PW
10 ms, duty cycle 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base (B)
2. Collector (C)
3. Emitter (E)
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The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
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