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SILICON TRANSISTOR
2SD2383
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-VOLTAGE SWITCHING
DATA SHEET
Document No. D16154EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
2002
The mark
shows major revised points.
DESCRIPTION
The 2SD2383 is an element realizing high voltage in small
dimension. This transistor is ideal for downsizing sets
requiring high voltage.
FEATURES
High voltage
Small dimension
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SD2383
SC-59
Marking: N1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Collector to Base Voltage
V
CBO
400 V
Collector to Emitter Voltage
V
CEO
300 V
Emitter to Base Voltage
V
EBO
5.0 V
Collector Current (DC)
I
C(DC)
20 mA
Total Power Dissipation
P
T
200
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
-55 to +150 C
PACKAGE DRAWING (Unit: mm)
2.8 0.2
1.5
0.65
+0.1
0.15
0.4
+0.1
0.05
0.95
0.95
2.9 0.2
0.4
+0.1
0.05
0.3
1.1 to 1.4
Marking
0.16
+0.1
0.06
0 to 0.1
1
2
3
1. Emitter
2. Base
3. Collector
Data Sheet D16154EJ2V0DS
2
2SD2383
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS SYMBOL TEST
CONDITIONS MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
= 200 V, I
E
= 0 A
100
nA
Emitter Cut-off Current
I
EBO
V
EB
= 5.0 V, I
C
= 0 A
100
nA
DC Current Gain
h
FE
V
CE
= 6.0 V, I
C
= 5 mA
100
250
-
Collector Saturation Voltage
V
CE(sat)
I
C
= 5.0 mA, I
B
= 0.5 mA
85
500
mV
Base Saturation Voltage
V
BE(sat)
I
C
= 5.0 mA, I
B
= 0.5 mA
0.68
1.0
V
Gain Bandwidth Product
f
T
V
CE
= 30 V, I
E
=
-10
mA
90 MHz
Output Capacitance
C
ob
V
CB
= 30 V, I
E
= 0, f = 1 MHz
1.3
pF
TYPICAL CHARACTERISTICS (T
A
= 25C)
250
200
150
100
50
0
0
50
100
150
25
75
125
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
- Ambient Temperature - C
P
T
-
T
otal P
o
w
er Dissipation -
W
Free air
100
50
20
10
5
2
1
0.1
0.5
0.2
600
800
1000
700
900
500
400
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
BE
- Base to Emitter Voltage - mV
I
C
- Collector Current - mA
V
CE
= 6.0 V
T
A
= 75C
-
25C
25C
100
100
50
50
20
20
10
1000
500
200
10
5
2
1
0.1
0.5
0.2
DC CURRENT GAIN vs.
COLLECTOR CURRENT
I
C
- Collector Current - mA
h
FE
- DC Current Gain
V
CE
= 6.0 V
T
A
= 75C
25C
-25C
100
100
50
50
20
20
10
1000
500
200
10
5
2
1
0.1
0.5
0.2
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
I
C
- Collector Current - mA
V
CE(sat)
- Collector Satur
ation
V
oltage - mV
I
C
= 10
.
I
B
T
A
= 75C
25C
-25C
Data Sheet D16154EJ2V0DS
3
2SD2383
100
-100
50
-50
20
-20
10
1000
500
200
-10
-1
-5
-2
GAIN BANDWIDTH PRODUCT vs.
EMITTER CURRENT
I
E
- Emitter Current - mA
f
T
- Gain Bandwidth Product - MHz
V
CE
= 30 V
1
100
0.5
50
0.2
20
0.1
10
5
2
10
1
5
2
OUTPUT CAPACITANCE vs.
REVERSE VOLTAGE
V
CB
- Collector to Base Voltage - V
C
ob
- Output Capacitance - pF
f = 1.0 MHz
2SD2383
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M8E 02. 11-1
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