Document Outline
- COVER
- FEATURES
- QUALITY GRADE
- Package Drawings
- Equivalent Circuit
- ABSOLUTE MAXIMUM RATINGS (Ta = +25 degree)
- ELECTRICAL SPECIFICATIONS (Ta = +25 degree)
- CHARACTERISTICS CURVES (Ta = +25 degree)
- RELATED DOCUMENTS
Printed in Japan
MOS FIELD EFFECT TRANSISTOR
The 2SJ358 is a P-channel vertical MOS FET that can
be used as a switching element. The 2SJ358 can be
directly driven by an IC operating at 5 V.
The 2SJ358 features a low on-resistance and excellent
switching characteristics, and is suitable for applications
such as actuator driver and DC/DC converter.
FEATURES
New-type compact package
Has advantages of packages for small signals and for
power transistors, and compensates those disadvan-
tages
Can be directly driven by an IC operating at 5 V.
Low on-resistance
R
DS(ON)
= 0.40
MAX. @V
GS
= 4 V, I
D
= 1.5 A
R
DS(ON)
= 0.30
MAX. @V
GS
= 10 V, I
D
= 1.5 A
QUALITY GRADE
Standard
ABSOLUTE MAXIMUM RATINGS (T
a
= +25 C)
Parameter
Symbol
Conditions
Ratings
Unit
Drain-Source Voltage
V
DSS
V
GS
= 0
60
V
Gate-Source Voltage
V
GSS
V
DS
= 0
20/+10
V
Drain Current (DC)
I
D(DC)
/+3.0
A
Drain Current (Pulse)
I
D(pulse)
PW
10 ms
/+6.0
A
Duty Cycle
1 %
Total Power Loss
P
T
Mounted on ceramic board of 7.5 cm
2
0.7 mm
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
Document No. TC-2491
(O.D. No. TC-8011)
Date Published October 1994 P
2SJ358
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
The information in this document is subject to change without notice.
1994
DATA SHEET
Package Drawings (unit: mm)
Equivalent Circuit
5.7 0.1
2.0 0.2
1.5 0.1
2
3
1
4.2
2.1
1.0
0.4 0.05
5.4 0.25
3.65 0.1
0.5 0.1
0.85 0.1
0.5 0.1
0.55
Drain (D)
Gate (G)
Source (S)
Internal
Diode
Gate Protect
Diode
Marking: UA2
Electrode Connection
1. Source
2. Drain
3. Gate
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by
NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
2SJ358
2
ELECTRICAL SPECIFICATIONS (T
a
= +25 C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Drain Shut-down Current
I
DSS
V
DS
= 60 V, V
GS
= 0
10
A
Gate Leak Current
I
GSS
V
GS
= 16/+10 V, V
DS
= 0
/+10
A
Gate Cutoff Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.0
1.4
2.0
V
Forward Transfer Admittance
|y
fs
|
V
DS
= 10 V, I
D
= 1.0 A
1.8
S
Drain-Source On-Resistance
R
DS(on)1
V
GS
= 4 V, I
D
= 1.5 A
0.29
0.40
Drain-Source On-Resistance
R
DS(on)2
V
GS
= 10 V, I
D
= 1.5 A
0.18
0.30
Input Capacitance
C
iss
V
DS
= 10 V, V
GS
= 0,
600
pF
Output Capacitance
C
oss
f = 1.0 MHz
300
pF
Feedback Capacitance
C
rss
120
pF
On-Time Delay
t
d(on)
V
DD
= 25 V, I
D
= 1.5 A
6
ns
Rise Time
t
r
V
GS(on)
= 10 V
35
ns
Off-Time Delay
t
d(off)
R
G
= 10
, R
L
= 17
155
ns
Fall Time
t
f
95
ns
Gate Input Charge
Q
G
V
DS
= 48 V,
23.9
nC
Gate-Source Chanrge
Q
GS
V
GS
= 10 V,
1.5
nC
Gate-Drain Charge
Q
GD
I
D
= 3.1 A, I
G
= 2 mA
8.1
nC
Internal Diode Reverse
t
rr
I
F
= 3.0 A
95
ns
Recovery Time
di/dt = 50 A/
s
Internal Diode Reverse
Q
rr
118
nC
Recovery Charge
CHARACTERISTICS CURVES (T
a
= +25 C)
100
25
80
60
40
20
0
50
75
100
125
150
T
a
Ambient Temperature C
dT Derating Factor %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
10
1
5
2
1
0.5
0.5
2
5
10
20
100
V
DS
Drain to Source Voltage V
I
D
Drain Current A
FORWARD BIAS SAFE OPERATING AREA
50
0.05
0.1
0.2
DS
Single Pulse
10 ms
PW = 100 ms
1 ms
2SJ358
3
10
1
8
6
4
2
0
2
3
4
5
V
DS
Drain to Source Voltage V
I
D
Drain Current A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
10
1
1
0.1
0.01
2
3
V
GS
Gate to Source Voltage V
I
D
Drain Current A
TRANSFER CHARACTERISTICS
4
0.00001
0.0001
0.001
Pulsed
10 V
4.5 V
4.0 V
3.5 V
3.0 V
2.5 V
V
GS
= 2.0 V
T
a
= 25 C
T
a
= 150 C
T
a
= 0 C
T
a
= 25 C
T
a
= 75 C
10
0.001
1
0.1
0.01
0.01
0.1
1
I
D
Drain Current A
|y
fs
| Forward Transfer Admittence S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
0.7
0.01
0.3
0.01
0.1
I
D
Drain Current A
R
DS(on)
Drain to Source On-State Resistance
10
0
0.1
V
DS
= 10 V
Pulsed
0.001
0.0001
T
a
= 75 C
T
a
= 25 C
T
a
= 150 C
T
a
= 0 C
T
a
= 25 C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRINT
1
0.5
V
DS
= 10 V
Pulsed
V
GS
= 4 V
Pulsed
0.5
0.01
0.4
0.3
0.1
0.1
1
10
I
D
Drain Current A
R
DS(on)
Drain to Source On-State Resistance
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
V
GS
= 10 V
Pulsed
0
0.001
T
a
= 25 C
0.2
T
a
= 0 C
T
a
= 25 C
T
a
= 150 C
T
a
= 75 C
0.6
0.2
0.4
2
V
GS
Gate to Source Voltage V
R
DS(on)
Drain to Source On-State Resistance
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Pulsed
0.6
0.2
0.4
4
6
8 10 12 14 16 18 20
I
D
= 1.5 A
I
D
= 3.0 A
T
a
= 25 C
T
a
= 25 C
T
a
= 0 C
T
a
= 75 C
T
a
= 150 C
2SJ358
4
10
0.2
1
0.1
0.01
V
SD
Source to Drain Voltage V
I
SD
Diode Forward Current A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
0.0001
0.001
V
GS
= 0
Pulsed
0.4
0.6
0.8
1.0
1.2
10000
1
1000
100
V
DS
Drain to Source Voltage V
C
iss
, C
oss
, C
rss
Capacitance pF
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10
V
GS
= 0
f = 1 MHz
10
100
C
iss
C
oss
C
rss
1000
0.1
100
10
t
d(on)
, t
r
, t
d(off)
, t
r
Switching Time ns
SWITCHING CHARACTERISTICS
V
DD
= 25 V
V
GS(ON)
= 10 V
1
10
t
d(on)
t
d(off)
t
f
t
r
I
D
Drain Current A
1000
0.05
100
10
t
rr
Reverse Recovery Time ns
V
GS
= 0
di/dt = 50 A/ s
1
10
I
D
Diode Forward Current A
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
0.1
0.5
5
1000
1 m
10
0.1
r
th(ja)
Transient Thermal Resistance C/
W
Single Pulse
Using ceramic board
of 7.5 cm
2
0.7 mm
10
100
PW Pulse Width s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10 m
1
1
100
100 m
2SJ358
5
RELATED DOCUMENTS
Document Name
Document No.
Semiconductor Device Mounting Technology Manual
IEI-1207
NEC Semiconductor Device Reliability/Quality Control System
TEI-1202
Guide to Quality Assurance for Semiconductor Device
MEI-1202
PDF 
ZIP