Document Outline
- COVER
- DESCRIPTION
- FEATURES
- ABSOLUTE MAXIMUM RATINGS (TA = 25 degree)
- Package Drawings
- Equivalent Circuit
- ELECTRICAL CHARACTERISTICS (TA = 25 degree)
- REFERENCE
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ463A
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
Document No. D11198EJ1V0DS00 (1st edition)
Date Published September 1996 P
Printed in Japan
DESCRIPTION
The 2SJ463A is a switching device which can be driven directly
by a 2.5 V power source.
The 2SJ463A has excellent switching characteristics, and is
suitable for use as a high-speed switching device in digital circuits.
FEATURES
Can be driven by a 2.5 V power source.
Low Gate Cut-off Voltage.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Drain to Source Voltage
V
DSS
30
V
Gate to Source Voltage
V
GSS
+20
V
Drain Current (DC)
I
D(DC)
+0.1
A
Drain Current (pulse)
I
D(pulse)
+0.4
Note
A
Total Power Dissipation
P
T
150
mW
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Note PW
10
s, Duty Cycle
1 %
Package Drawings (unit: mm)
Equivalent Circuit
2.0 0.2
0.65
0.65
2.1 0.1
0.15
+0.1
0.05
0.3
0.9 0.1
0.3
+0.1
0
0.3
+0.1
0
2
1
3
1.25 0.1
Marking
0 to 1.1
Internal Diode
Source
Drain
Gate
Gate Protect
Diode
Electrode
Connection
1. Source
2. Gate
3. Drain
Marking : H21
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
2
2SJ463A
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain Cut-off Current
I
DSS
1
A
V
DS
= 30 V, V
GS
= 0
Gate Leakage Current
I
GSS
+10
A
V
GS
= +20 V, V
DS
= 0
Gate Cut-off Voltage
V
GS(off)
1.0
1.4
1.7
V
V
DS
= 3 V, I
D
= 10
A
Forward Transfer Admittance
| y
fs
|
20
mS
V
DS
= 3 V, I
D
= 10 mA
Drain to Source On-State
R
DS(on)1
23
60
V
GS
= 2.5 V, I
D
= 1 mA
Resistance
Drain to Source On-State
R
DS(on)2
11
23
V
GS
= 4 V, I
D
= 10 mA
Resistance
Drain to Source On-State
R
DS(on)3
6
13
V
GS
= 10 V, I
D
= 10 mA
Resistance
Input Capacitance
C
iss
5
pF
V
DS
= 3 V
Output Capacitance
C
oss
15
pF
V
GS
= 0
Reverse Transfer Capacitance
C
rss
1.3
pF
f = 1 MHz
Turn-on Delay Time
t
d(on)
140
ns
V
DD
= 3 V, I
D
= 10 mA
Rise Time
t
r
330
ns
V
GS(on)
= 4 V, R
G
= 10
Turn-off Delay Time
t
d(off)
220
ns
R
L
= 300
Fall Time
t
f
320
ns
3
2SJ463A
V
DS
= 3 V
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
A
- Ambient Temperature - C
0 30 60 90 120 150
0
20
dT - Derating Factor - %
40
60
80
100
TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
0 0.8 1.6 2.4 3.2 4.0
I
D
- Drain Current - mA
0.001
0.01
0.1
1
10
100
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - mA
0.1 1 10 100 1000
Iy
fs
I - Forward Transfer Admittance - mS
1
10
100
1000
V
DS
= 3 V
T
A
= 125 C
T
A
= 75 C
T
A
= 25 C
T
A
= 25 C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - mA
0.1 1 10 100 1000
R
DS(on)
- Drain to Source On-State Resistance -
20
0
10
30
40
50
60
V
GS
= 2.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - mA
0.1 1 10 100 1000
R
DS(on)
- Drain to Source On-State Resistance -
0
10
20
30
40
50
60
T
A
= 125 C
T
A
= 75 C
V
GS
= 4 V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
0 1 2 3 4 5
I
D
- Drain Current - mA
0
20
40
60
80
100
V
GS
= 3 V
V
GS
= 2.5 V
V
GS
= 10 V
V
GS
= 6 V
V
GS
= 4 V
T
A
= 25 C
T
A
= 25 C
T
A
= 125 C
T
A
= 75 C
T
A
= 125 C
T
A
= 75 C
T
A
= 25 C
T
A
= 25 C
T
A
= 25 C
T
A
= 25 C
4
2SJ463A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - mA
0.1 1 10 100 1000
R
DS(on)
- Drain to Source On-Stage Resistance -
0
10
20
30
40
50
60
V
GS
=
10 V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
0 2 4 6 8 10
R
DS(on)
- Drain to Source On-State Resistance -
0
10
20
30
40
50
60
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
1 10 100
V
GS
= 0
f = 1 MHz
C
iss
,C
oss
,C
rss
- Capacitance - pF
10
100
1
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - mA
10 100 1000
V
DD
= 3 V
V
GS(on)
=
4 V
R
in
= 10
t
d(on)
,t
r
,t
d(off)
,t
f
- Switching Time - ns
10
100
1000
t
r
t
d(on)
t
f
t
d(off)
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
0.2 0.4 0.6 0.8 1.0 1.2
I
D
- Reverse Drain Current - mA
0.1
1
10
100
1000
T
A
=
25 C
T
A
=
25 C
I
D
=
1 mA
I
D
=
100 mA
I
D
=
10 mA
T
A
=
125 C
T
A
=
75 C
5
2SJ463A
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
TEI-1202
Quality grade on NEC semiconductor devices
C11531E
Semiconductor device mounting technology manual
C10535E
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
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