Document Outline
- COVER
- DESCRIPTION
- FEATURES
- ABSOLUTE MAXIMUM RATINGS (TA = 25 degree)
- PACKAGE DIMENSIONS
- THERMAL RESISTANCE
- ELECTRICAL CHARACTERISTICS (TA = 25 degree)
MOS FIELD EFFECT POWER TRANSISTORS
2SJ494
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
1998
Document No. D11266EJ2V0DS00 (2nd edition)
Date Published January 1998 N CP(K)
Printed in Japan
DATA SHEET
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super Low On-State Resistance
R
DS(on)1
= 50 m
:
Max. (V
GS
= 10 V, I
D
= 10 A)
R
DS(on)2
= 88 m
:
Max. (V
GS
= 4 V, I
D
= 10 A)
Low C
iss
C
iss
= 2360 pF Typ.
Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage
V
DSS
60
V
Gate to Source Voltage*
V
GSS (AC)
+20
V
Gate to Source Voltage
V
GSS (DC)
20, 0
V
Drain Current (DC)
I
D (DC)
+20
A
Drain Current (pulse)**
I
D (pulse)
+80
A
Total Power Dissipation (T
C
= 25 C)
P
T
35
W
Total Power Dissipation (T
A
= 25 C)
P
T
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
* f = 20 kHz, Duty Cycle
d
10% (+Side)
** PW
d
10
P
s, Duty Cycle
d
1%
THERMAL RESISTANCE
Channel to Case
R
th (ch-C)
3.57 C/W
Channel to Ambient
R
th (ch-A)
62.5 C/W
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
PACKAGE DIMENSIONS
(in millimeter)
1. Gate
2. Drain
3. Source
10.00.3
3.20.2
2.70.2
1.30.2
0.70.1
2.54
2.54
1.50.2
1 2 3
40.2
13.5 MIN.
12.00.2
15.00.3
30.1
4.50.2
2.50.1
0.650.1
ISOLATED TO-220 (MP-45F)
Body
Diode
Source
Drain
Gate
Gate Protection
Diode
2
2SJ494
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 10 A
39
50
m
:
R
DS(on)2
V
GS
= 4 V, I
D
= 10 A
61
88
m
:
Gate to Source Cutoff Voltage
V
GS (off)
V
DS
= 10 V, I
D
= 1 mA
1.0
1.5
2.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 10 A
8.0
15
S
Drain Leakage Current
I
DSS
V
DS
= 60 V, V
GS
= 0
10
P
A
Gate to Source Leakage Current
I
GSS
V
GS
= +20 V, V
DS
= 0
+10
P
A
Input Capacitance
C
iss
2360
pF
Output Capacitance
C
oss
1060
pF
Reverse Transfer Capacitance
C
rss
350
pF
Turn-On Delay Time
t
d(on)
25
ns
Rise Time
t
r
160
ns
Turn-Off Delay Time
t
d(off)
310
ns
Fall Time
t
f
240
ns
Total Gate Charge
Q
G
74
nC
Gate to Source Charge
Q
GS
12
nC
Gate to Drain Charge
Q
GD
16
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 20 A, V
GS
= 0
1.0
1.5
V
Reverse Recovery Time
t
rr
130
ns
Reverse Recovery Charge
Q
rr
290
nC
Test Circuit 1 Switching Time
Test Circuit 2 Gate Charge
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 10 A
V
GS(on)
= 10 V
V
DD
= 30 V
R
G
= 10
:
I
D
= 20 A
V
DD
= 48 V
V
GS
= 10 V
I
F
= 20 A, V
GS
= 0
di/dt = 100 A/
P
s
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
PG.
R
G
= 10
D.U.T.
R
L
V
DD
R
G
V
GS
0
t = 1 s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
I
D
10 %
10 %
0
0
90 %
90 %
90 %
10 %
V
GS (on)
I
D
t
on
t
off
t
d (on)
t
r
t
d (off)
t
f
t
3
2SJ494
FORWARD BIAS SAFE OPERATING AREA
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
1
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - C
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
20
0
20
40
60
80
100
120
140
160
20
40
60
80
100
40
60
80
100
120
140
160
35
30
25
20
15
10
5
1
0.1
10
100
1000
1
10
100
Tc = 25 C
Single Pulse
0
8
12
16
80
10
100
1 000
Pulsed
100
4
0
Pulsed
5
V
GS
= 10 V
10
T
ch
= 25 C
25 C
125 C
15
Power Dissipation Limited
DC
100 ms
ID(DC)
500 s
ID(pulse)
RDS(on) Limited
(at VGS =10 V)
V
DS
= 10 V
60
40
20
10 ms
1 ms
300 s
V
GS
= 4 V
4
2SJ494
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance - C/
W
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-State Resistance - m
0
5
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cutoff Voltage - V
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - m
100
1
10
0.001
0.01
0.1
1
100
1 000
1 m
10 m
100 m
1
10
100
1 000
10
100
V
DS
= 10 V
Pulsed
0.1
1.0
1
10
100
10
100
50
10
20
Pulsed
150
10
100
Pulsed
0
V
DS
= 10 V
I
D
= 1 mA
50
0
50
100
150
0
0.1
Single Pulse
1.0
2.0
150
100
V
GS
= 10 V
V
GS
= 4 V
Tch = 25 C
25 C
75 C
125 C
I
D
= 20 A
1.5
0.5
50
R
th(ch-a)
= 62.5 C/W
R
th(ch-c)
= 3.57 C/W
5
2SJ494
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-State Resistance - m
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1
0.1
0
50
40
0
50
100
150
I
D
= 10 A
0.1
0
1
10
100
1.0
Pulsed
10
0.1
100
1 000
10 000
1
10
100
V
GS
= 0
f = 1 MHz
10
100
1 000
1
10
100
V
GS
- Gate to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Diode Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 50 A/ s
V
GS
= 0
1
0.1
10
1
10
100
2.0
3.0
V
DD
= 30 V
V
GS
= 10 V
R
G
= 10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
20
40
60
80
20
40
60
80
2
4
6
8
0
80
160
120
V
GS
= 4 V
V
GS
= 10 V
C
iss
C
oss
C
rss
V
DD
= 48 V
24 V
12 V
V
GS
V
DS
t
d(off)
t
d(on)
t
r
t
f
V
GS
= 4 V
V
GS
= 0
1000
100
12
14
10
I
D
= 20 A
6
2SJ494
Document Name
Document No.
NEC semiconductor device reliability/quality control system
C11745E
Power MOS FET features and application to switching power supply
D12971E
Application circuits using Power MOS FET
TEA-1035
Safe operating area of Power MOS FET
TEA-1037
Guide to prevent damage for semiconductor devices by electrostatic discharge (EDS)
C11892E
7
2SJ494
[MEMO]
2SJ494
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
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copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
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"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
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equipment and industrial robots
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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
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support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
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Anti-radioactive design is not implemented in this product.
M4 96. 5
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