2000
MOS FIELD EFFECT TRANSISTOR
2SJ599
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
PRELIMINARY DATA SHEET
Document No.
D14644EJ1V0DS00 (1st edition)
Date Published
November 2000 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SJ599 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
Low on-state resistance:
R
DS(on)1
= 75 m
MAX. (V
GS
= 10
V, I
D
= 10
A)
R
DS(on)2
= 111 m
MAX. (V
GS
= 4.0
V, I
D
= 10 A)
Low C
iss
: C
iss
= 1300 pF TYP.
Built-in gate protection diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0
V)
V
DSS
60
V
Gate to Source Voltage (V
DS
= 0
V)
V
GSS
+
20
V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
+
20
A
Drain Current (pulse)
Note1
I
D(pulse)
+
50
A
Total Power Dissipation (T
C
= 25C)
P
T
35
W
Total Power Dissipation
(T
A
= 25C)
P
T
1.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note2
I
AS
20
A
Single Avalanche Energy
Note2
E
AS
40
mJ
Notes 1. PW
10
s, Duty cycle
1%
2. Starting T
ch
= 25C, R
G
= 25
, V
GS
= 20 V
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ599
TO-251
2SJ599-Z
TO-252
(TO-251)
(TO-252)
Preliminary Data Sheet D14644EJ1V0DS
2
2SJ599
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60
V, V
GS
= 0
V
10
A
Gate Leakage Current
I
GSS
V
GS
= +20
V, V
DS
= 0
V
+10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10
V, I
D
= 10
A
8
16
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10
V, I
D
= 10
A
60
75
m
R
DS(on)2
V
GS
= 4.0
V, I
D
= 10
A
78
111
m
Input Capacitance
C
iss
V
DS
= 10
V,
1300
pF
Output Capacitance
C
oss
V
GS
= 0
V,
240
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
100
pF
Turn-on Delay Time
t
d(on)
I
D
= 10
A,
8
ns
Rise Time
t
r
V
GS(on)
= 10
V,
9
ns
Turn-off Delay Time
t
d(off)
V
DD
= 30
V,
52
ns
Fall Time
t
f
R
G
= 0
16
ns
Total Gate Charge
Q
G
I
D
= 20A,
26
nC
Gate to Source Charge
Q
GS
V
DD
= 48
V,
5
nC
Gate to Drain Charge
Q
GD
V
GS
= 10
V
7
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 20
A, V
GS
= 0
V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 20
A, V
GS
= 0
V
51
ns
Reverse Recovery Charge
Q
rr
di/dt = 100
A
/
s
102
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG
L
V
DD
V
GS
= 20 V
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
(
-
)
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
(
-
)
10%
90%
V
GS
(on)
10%
0
V
DS
(
-
)
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
V
DS
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
=
-
2 mA
-
Preliminary Data Sheet D14644EJ1V0DS
3
2SJ599
PACKAGE DRAWINGS (Unit : mm)
1) TO-251 (MP-3)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2
1
3
6.50.2
5.00.2
4
1.5-
0.1
+0.2
5.50.2
7.0 MAX.
13.7 MIN.
2.3
2.3
0.75
0.50.1
2.30.2
1.60.2
1.10.2
0.5-
0.1
+0.2
0.5-
0.1
+0.2
2) TO-252 (MP-3Z)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1
2
3
4
6.50.2
5.00.2
4.3 MAX.
0.8
2.3 2.3
0.9
MAX.
5.50.2
10.0 MAX.
2.0 MIN.
1.5-
0.1
+0.2
2.30.2
0.50.1
0.8
MAX.
0.8
1.0 MIN.
1.8 TYP.
0.7
1.10.2
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
2SJ599
M8E 00. 4
The information in this document is current as of November, 2000. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
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