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MOS FIELD EFFECT TRANSISTOR
2SJ604
SWITCHING
P-CHANNEL POWER MOS FET
DATA SHEET
Document No.
D14649EJ3V0DS00 (3rd edition)
Date Published
July 2002 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
2000, 2001
DESCRIPTION
The 2SJ604 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
Super low on-state resistance:
R
DS(on)1
= 30 m
MAX. (V
GS
=
-
10 V, I
D
=
-
23 A)
R
DS(on)2
= 43 m
MAX. (V
GS
=
-
4.0 V, I
D
=
-
23 A)
Low input capacitance:
C
iss
= 3300 pF TYP. (V
DS
=
-
10
V, V
GS
= 0
V)
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
-
60
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
m
20
V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
m
45
A
Drain Current (pulse)
Note1
I
D(pulse)
m
120
A
Total Power Dissipation (T
C
= 25C)
P
T
70
W
Total Power Dissipation
(T
A
= 25C)
P
T
1.5
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
-
55 to +150
C
Single Avalanche Current
Note2
I
AS
-
35
A
Single Avalanche Energy
Note2
E
AS
123
mJ
Notes 1. PW
10
s, Duty cycle
1%
2. Starting T
ch
= 25C, V
DD
=
-
30
V, R
G
= 25
, V
GS
=
-
20
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ604
TO-220AB
2SJ604-S
TO-262
2SJ604-ZJ
TO-263
2SJ604-Z
TO-220SMD
Note
Note TO-220SMD package is produced only in
Japan
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
Data Sheet D14649EJ3V0DS
2
2SJ604
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
-
60 V, V
GS
= 0 V
-
10
A
Gate Leakage Current
I
GSS
V
GS
=
m
20 V, V
DS
= 0 V
m
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
=
-
10 V, I
D
=
-
1 mA
-
1.5
-
2.0
-
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
=
-
10 V, I
D
=
-
23 A
20
41
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
=
-
10 V, I
D
=
-
23 A
23
30
m
R
DS(on)2
V
GS
=
-
4.0 V, I
D
=
-
23 A
30
43
m
Input Capacitance
C
iss
V
DS
=
-
10 V
3300
pF
Output Capacitance
C
oss
V
GS
= 0 V
580
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
230
pF
Turn-on Delay Time
t
d(on)
V
DD
=
-
30 V, I
D
=
-
23 A
12
ns
Rise Time
t
r
V
GS
=
-
10 V
11
ns
Turn-off Delay Time
t
d(off)
R
G
= 0
77
ns
Fall Time
t
f
52
ns
Total Gate Charge
Q
G
V
DD
=
-
48 V
63
nC
Gate to Source Charge
Q
GS
V
GS
=
-
10 V
11
nC
Gate to Drain Charge
Q
GD
I
D
=
-
45 A
16
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 45 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 45 A, V
GS
= 0 V
51
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A
/
s
105
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
=
-
20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
(
-
)
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
(
-
)
10%
90%
10%
0
V
DS
(
-
)
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
V
DS
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
=
-
2 mA
-
V
GS
Data Sheet D14649EJ3V0DS
3
2SJ604
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
ch
- Channel Temperature - C
dT - Percentage of Rated Power - %
0
40
20
60
100
140
80
120
160
100
80
60
40
20
0
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
80
20
40
60
100
140
120
160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
100
80
60
40
20
0
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drain Current - A
V
DS
- Drain to Source Voltage - V
1
10
100
0.1
1
10
T
C
= 25C
Single Pulse
0.1
100
Power Dissipation
Limited
R
DS(on)
Limited
I
D(DC)
I
D(pulse)
PW = 10
s
1 ms
10 ms
DC
1000
100
s
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
C
/W
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
Single Pulse
10
100
R
th(j-C)
= 1.79C/W
R
th(j-A)
= 83.3C/W
Data Sheet D14649EJ3V0DS
4
2SJ604
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
Pulsed
1
2
3
4
5
V
DS
= 10 V
100
10
1
1000
0.1
T
A
=
-
55C
25C
75C
125C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0
2
3
4
120
100
80
60
40
20
0
1
Pulsed
5
4.0 V
4.5 V
V
GS
= 10 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
0.01
0.1
1
10
100
10
100
0.1
1
Pulsed
V
DS
= 10 V
0.01
T
A
= 125C
75C
25C
-
55C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - m
0
5
10
15
20
Pulsed
80
60
40
20
0
I
D
= 45 A
23 A
9 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
10
1
80
60
40
20
0
100
1000
Pulsed
V
GS
= 4.0 V
4.5 V
10 V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
1.0
2.0
3.0
50
0
50
100
0
150
4.0
Data Sheet D14649EJ3V0DS
5
2SJ604
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance - m
-
50
0
50
100
150
I
D
= 23 A
60
50
40
30
20
10
0
10 V
Pulsed
4.5 V
V
GS
= 4.0 V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
I
SD
- Diode Forward Current - A
0
1.5
V
SD
- Source to Drain Voltage - V
0.5
Pulsed
0.1
1
10
100
1000
0 V
V
GS
= 10 V
4.0 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
10
100
1000
10000
0.1
1
10
V
GS
= 0 V
f = 1 MHz
C
iss
100
C
oss
C
rss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10
1
1
0.1
100
1000
10
100
t
f
t
r
t
d(on)
t
d(off)
V
DD
= 30 V
V
GS
= 10 V
R
G
= 0
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
D
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/ s
V
GS
= 0 V
1
0.1
10
1
10
100
1000
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
20
30
10
40
50
60
70
60
50
40
30
20
10
0
V
DS
V
GS
V
DD
= 48 V
30 V
12 V
I
D
= 45 A
12
10
8
6
4
2
0
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