2000
MOS FIELD EFFECT TRANSISTOR
2SJ605
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No. D14650EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark
!
!
!
!
shows major revised points.
DESCRIPTION
The 2SJ605 is P-channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
Super low on-state resistance:
R
DS(on)1
= 20 m
MAX. (V
GS
= 10
V, I
D
= 33
A)
R
DS(on)2
= 31 m
MAX. (V
GS
= 4.0
V, I
D
= 33 A)
Low input capacitance
C
iss
= 4600 pF TYP. (V
DS
= 10
V, V
GS
= 0 A)
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
60
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
m
20
V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
m
65
A
Drain Current (pulse)
Note1
I
D(pulse)
m
200
A
Total Power Dissipation (T
C
= 25C)
P
T
100
W
Total Power Dissipation
(T
A
= 25C)
P
T
1.5
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note2
I
AS
45
A
Single Avalanche Energy
Note2
E
AS
203
mJ
Notes 1. PW
10
s, Duty cycle
1%
2. Starting T
ch
= 25C, V
DD
= 30 V, R
G
= 25
, V
GS
= 20
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ605
TO-220AB
2SJ605-S
TO-262
2SJ605-ZJ
TO-263
2SJ605-Z
TO-220SMD
Note
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
!
!
Data Sheet D14650EJ2V0DS
2
2SJ605
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60
V, V
GS
= 0
V
10
A
Gate Leakage Current
I
GSS
V
GS
=
m
20
V, V
DS
= 0
V
m
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10
V, I
D
= 33
A
30
59
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10
V, I
D
= 33
A
17
20
m
R
DS(on)2
V
GS
= 4.0
V, I
D
= 33
A
22
31
m
Input Capacitance
C
iss
V
DS
= 10
V
4600
pF
Output Capacitance
C
oss
V
GS
= 0
V
820
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
330
pF
Turn-on Delay Time
t
d(on)
V
DD
= 30
V, I
D
= 33
A
15
ns
Rise Time
t
r
V
GS
= 10
V
14
ns
Turn-off Delay Time
t
d(off)
R
G
= 0
100
ns
Fall Time
t
f
58
ns
Total Gate Charge
Q
G
V
DD
= 48
V
87
nC
Gate to Source Charge
Q
GS
V
GS
= 10
V
15
nC
Gate to Drain Charge
Q
GD
I
D
= 65
A
22
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 65
A, V
GS
= 0
V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 65
A, V
GS
= 0
V
53
ns
Reverse Recovery Charge
Q
rr
di/dt = 100
A
/
s
110
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG
L
V
DD
V
GS
= 20 V
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
(
-
)
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
(
-
)
10%
90%
10%
0
V
DS
(
-
)
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
V
DS
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
=
-
2 mA
-
!
!
!
!
!
!
Data Sheet D14650EJ2V0DS
3
2SJ605
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
ch
- Channel Temperature - C
dT - Percentage of Rated Power - %
0
40
20
60
100
140
80
120
160
100
80
60
40
20
0
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
80
20
40
60
100
140
120
160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
FORWARD BIAS SAFE OPERATING AREA
V
DS
-
Drain to Source Voltage - V
I
D
- Drain Current - A
1
0.1
0.1
10
100
1000
1
10
100
T
C
= 25C
Single Pulse
PW = 10
s
100
s
1 ms
10 ms
DC
Power Dissipation
Limited
R
DS(on)
Limited
I
D(DC)
I
D(pulse)
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
C
/W
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
Single Pulse
10
100
R
th(ch-C)
= 1.25C/W
R
th(ch-A)
= 83.3C/W
!
Data Sheet D14650EJ2V0DS
4
2SJ605
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
1
2
3
4
5
V
DS
= 10 V
100
10
1
1000
0.1
Pulsed
T
A
=
-
55C
25C
75C
125C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0
2
3
4
200
150
100
50
0
1
Pulsed
V
GS
= 10 V
5
4.0 V
4.5 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
0.01
0.1
1
100
1000
10
100
1
10
Pulsed
V
DS
= 10 V
T
A
= 125C
75C
25C
-
50C
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - m
0
5
10
15
20
Pulsed
40
30
20
10
0
I
D
= 65 A
I
D
= 33 A
I
D
= 13 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
10
1
100
1000
Pulsed
V
GS
= 4.0 V
4.5 V
10 V
60
40
20
0
100
80
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
1.0
2.0
3.0
50
0
50
100
0
150
4.0
Data Sheet D14650EJ2V0DS
5
2SJ605
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance - m
-
50
0
50
100
150
I
D
= 33A
50
40
30
20
10
0
Pulsed
V
GS
= 4.0 V
4.5 V
10 V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
I
SD
- Diode Forward Current - A
0
1.5
V
SD
- Source to Drain Voltage - V
0.5
Pulsed
0.1
1
10
100
1000
0 V
V
GS
= 10 V
2.0
4 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
100
1000
10000
100000
0.1
1
10
V
GS
= 0 V
f = 1 MHz
100
C
rss
C
oss
C
iss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10
1
1
0.1
100
1000
10
100
t
f
t
r
t
d(on)
t
d(off)
V
DD
= 30 V
R
G
= 0
V
GS
= 10 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
40
60
20
80
100
60
50
40
30
20
10
0
12
10
8
6
4
2
0
I
D
= 65 A
V
DS
V
GS
V
DD
= 48 V
30 V
12 V
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
I
AS
- Single Avalanche Current - A
10
100
1000
1 m
10 m
V
DD
= 30 V
R
G
= 25
V
GS
= 20
0
V
I
AS
= 45 A
10
100
1
E
AS
= 203 mJ
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