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1991, 2000
MOS FIELD EFFECT TRANSISTOR
2SK1398
N-CHANNEL MOS FET
FOR HIGH SPEED SWITCHING
DATA SHEET
Document No. D14772EJ2V0DS00 (2nd edition)
(Previous No. TC-2342)
Date Published March 2000 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK1398 is N-channel MOS Field Effect Transistor
designed for a high-speed switching device in digital circuits.
The 2SK1398 is driven by a 2.5-V power source, it is
suitable for applications including headphone stereos
which need power saving.
FEATURES
Directly driven by ICs having a 3-V power supply.
Not necessary to consider driving current because of its high input impedance.
Possible to reduce the number of parts by omitting the bias resistor.
Can be used complementary with the 2SJ184.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
50
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
7.0
V
Drain Current (DC)
I
D(DC)
100
mA
Drain Current (pulse)
Note
I
D(pulse)
200
mA
Total Power Dissipation
P
T
250
mW
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Note PW
10 ms, Duty cycle
50 %
The mark
5
5
5
5
shows major revised points.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK1398
SST
5
Data Sheet D14772EJ2V0DS00
2
2SK1398
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
I
DSS
V
DS
= 50 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
= 7.0 V, V
DS
= 0 V
5.0
A
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 3.0 V, I
D
= 1.0
A
0.9
1.2
1.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 3.0 V, I
D
= 10 mA
20
38
mS
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 2.5 V, I
D
= 10 mA
22
40
R
DS(on)2
V
GS
= 4.0 V, I
D
= 10 mA
14
20
Input Capacitance
C
iss
V
DS
= 3.0 V
8
pF
Output Capacitance
C
oss
V
GS
= 0 V
7
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
3
pF
Turn-on Delay Time
t
d(on)
V
DD
= 3.0 V
15
ns
Rise Time
t
r
I
D
= 20 mA
100
ns
Turn-off Delay Time
t
d(off)
V
GS(on)
= 3.0 V
30
ns
Fall Time
t
f
R
G
= 10
, R
L
= 150
35
ns
TEST CIRCUIT SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
90 %
V
GS(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
R
G
= 10
I
D
0
t
on
t
off
5
Data Sheet D14772EJ2V0DS00
3
2SK1398
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - C
dT - Derating Factor - %
0
20
40
60
80
100
120
140
160
20
40
60
80
100
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
- Ambient Temperature - C
P
T
- Total Power Dissipation - mW
0
30
60
90
120
150
180
300
250
200
150
100
50
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - mA
0
1.0
1.5
2.0
40
0.5
Pulsed
V
GS
= 4.5 V
80
100
60
20
V
GS
= 4.0 V
V
GS
= 2.5 V
FORWARD TRANSFER CHARACTERISTICS
V
GS
-
Gate to Source Voltage - V
I
D
- Drain Current - mA
0.1
0.01
1
10
100
Pulsed
0
1
2
V
DS
= 3.0 V
3
4
5
6
7
T
A
= 150 C
75 C
25 C
-
25 C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
= 3.0 V
I
D
= 1.0
A
0
50
100
150
0.5
1.0
2.0
1.5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - mA
| y
fs
| - Forward Transfer Admittance - mS
V
DS
= 5.0 V
f = 1 kHz
10
10
100
1000
100 200
1
5
Data Sheet D14772EJ2V0DS00
4
2SK1398
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance -
0
1
3
5
7
9
6
10
10
Pulsed
30
20
8
4
2
I
D
= 100 mA
I
D
= 10 mA
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
I
D
- Drain Current - mA
Pulsed
1
0.1
10
100
10
100
1
R
DS(on)
- Drain to Source On-state Resistance -
V
GS
= 4.0 V
V
GS
= 2.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance -
50
0
10
100
150
I
D
= 5.0 mA
15
20
25
V
GS
= 2.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance -
50
0
100
150
I
D
= 5.0 mA
15
20
30
25
V
GS
= 4.0 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
1
1
10
100
10
100
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - mA
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1
1
10
100
1 000
10
100
1000
V
DD
= 3.0 V
V
GS
= 3.0 V
R
GS
= 10
t
d(off)
t
d(on)
t
r
t
f
5
Data Sheet D14772EJ2V0DS00
5
2SK1398
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Source to Drain Current - mA
0.1
0.5
1
10
100
0.6
0.7
0.8
0.9
1.0
Pulsed
V
GS
= 0 V
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