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MOS FIELD EFFECT TRANSISTOR
2SK1580
SWITCHING
N-CHANNEL MOS FET
DATA SHEET
Document No. D13555EJ5V0DS00 (5th edition)
Date Published June 2005 NS CP(K)
Printed in Japan
1991
The mark
shows major revised points.
DESCRIPTION
The 2SK1580 is an N -channel vertical type MOS FET which
can be driven by 2.5 V power supply.
As the 2SK1580 is driven by low voltage and does not require
consideration of driving current, it is suitable for appliance
including VCR cameras and headphone stereos which need
power saving.
FEATURES
Directly driven by ICs having a 3 V power supply.
Not necessary to consider driving current because of its high
input impedance.
Possible to reduce the number of parts by omitting the bias
resistor.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK1580
SC-70 (SSP)
Marking: G13
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
16 V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
16 V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
100 mA
Drain Current (pulse)
Note
I
D(pulse)
200 mA
Total Power Dissipation (T
A
= 25C)
P
T
150
mW
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
-55 to +150
C
Note PW
10 ms, Duty Cycle 50%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
2.1
0.1
1.25
0.1
2.0
0.2
0.9
0.1
3
Marking
2
1
0.3
+
0.1 -0
0.15
+
0.1 -0.05
0.3
0.65
0 to 0.1
0.3
0.65
+
0.1 -0
1. Source
2. Gate
3. Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Data Sheet D13555EJ5V0DS
2
2SK1580
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V
1.0
A
Gate Leakage Current
I
GSS
V
GS
=
3.0 V, V
DS
= 0 V
5.0
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 3.0 V, I
D
= 10
A 0.8
1.1
1.6
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
= 3.0 V, I
D
= 10 mA
20
44
mS
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
= 2.5 V, I
D
= 1.0 mA
9.0
15
R
DS(on)2
V
GS
= 4.0 V, I
D
= 1.0 mA
6.0
10
Input Capacitance
C
iss
V
DS
= 3.0 V
18
pF
Output Capacitance
C
oss
V
GS
= 0 V
22
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
4.0
pF
Turn-on Delay Time
t
d(on)
V
DD
= 3.0 V, I
D
= 10 mA
27
ns
Rise Time
t
r
V
GS
= 3.0 V
75
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
78 ns
Fall Time
t
f
80 ns
Note Pulsed
TEST CIRCUIT SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
I
D
0
t
on
t
off
Data Sheet D13555EJ5V0DS
3
2SK1580
TYPICAL CHARACTERISTICS (T
A
= 25C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
-
T
otal P
o
w
er Dissipation -m
W
T
A
- Ambient Temperature - C
30
30
60
90
120
150
180
0
150
120
60
180
90
20
60
80
40
0
100
120
DRAIN CURRENT
VS.
DRAIN TO SOURCE VOLTAGE
I
D
- Dr
ain Current - mA
V
DS
- Drain to Source Voltage - V
0
1
2
3
7
Pulsed
3.5 V
4.0 V
3.0 V
2.5 V
V
GS
= 2.0 V
TRANSFER CHARACTERISTICS
I
D
- Drain Current - mA
V
DS
= 3 V
Pulsed
T
A
= 150C
75C
25C
25C
T
A
= 150C
75C
25C
25C
0
0.5
1.0
1.5
2.0
2.5
3.0
1
10
100
0.1
0.01
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
= 3 V
I
D
= 10 A
- 30
0
30
60
90
120
150
0
0.5
1.5
1.0
100
30
10
3
1
300
V
DS
= 3 V
Pulsed
1000
I
D
- Drain Current - mA
| y
fs
| - Forward Transfer Admittance - mS
T
A
=
-25C
1000
100
10
1
75C
25C
150C
DRAIN CURRENT
FORWARD TRANSFER ADMMITTANCE vs.
0
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
R
DS(on)
- Dr
ain to Source On-state Resistance -
V
GS
- Gate to Source Voltage - V
0
5
10
15
20
25
10
5
I
D
= 1 mA
Pulsed
Data Sheet D13555EJ5V0DS
4
2SK1580
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
10
1
100
I
D
- Drain Current - mA
R
DS(on)
- Drain to Source On-state Resistance -
0
T
A
= 150C
75C
-25C
25C
V
GS
= 2.5 V
Pulsed
3
30
5
15
10
R
DS(on)
- Dr
ain to Source On-state Resistance -
T
ch
- Channel Temperature - C
30
0
30
150
120
60
90
15
10
5
0
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
V
GS
= 2.5 V
V
GS
= 4 V
I
D =
1 mA
Pulsed
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
30
100
C
iss
,C
oss
,C
rss
- Capacitance - pF
1
3
10
0.3
0.1
V
DS
- Drain to Source Voltage - V
0.1
100
10
1
C
iss
C
oss
C
rss
V
GS
= 0 V
f = 1 MH
Z
2
10
20
100
200
I
D
- Drain Current - mA
t
d(on)
,t
r
,t
d(off)
,t
f
- Switching Time - ns
t
d(off)
t
d(on)
t
f
t
r
SWITCHING CHARACTERISTICS
1000
300
100
30
10
V
DD =
3 V
V
GS =
3 V
R
G =
10
2SK1580
The information in this document is current as of June, 2005. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1
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